Si4826DY
Vishay Siliconix
Asymmetrical Dual N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
Channel-1
Channel 1
30
Channel-2
Channel 2
FEATURES
r
DS(on)
(W)
0.022 @ V
GS
= 10 V
0.030 @ V
GS
= 4.5 V
0.0155 @ V
GS
= 10 V
0.0205 @ V
GS
= 4.5 V
I
D
(A)
6.3
5.4
9.5
8.2
D
100% R
g
Tested
SO-8
S
1
G
1
S
2
G
2
1
2
3
4
Top View
Ordering Information: Si4826DY
Si4826DY-T1 (with Tape and Reel)
8
7
6
5
D
1
D
2
D
2
D
2
G
1
D
1
D
2
D
2
D
2
G
2
S
1
N-Channel 1
MOSFET
S
2
N-Channel 2
MOSFET
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Channel 1
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
=
150_C)
NO TAG
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
NO TAG
Maximum Power Dissipation
NO TAG
T
A
= 25_C
T
A
= 70_C
T
A
= 25_C
T
A
= 70_C
Channel 2
10 secs
30
20
V
9.5
7.6
40
7.0
5.6
A
1.15
1.25
0.80
W
_C
Symbol
V
DS
V
GS
10 secs
Steady State
Steady State
Unit
6.3
I
D
I
DM
I
S
P
D
T
J
, T
stg
1.3
1.4
0.9
5.4
30
5.3
4.2
0.9
1.0
0.64
- 55 to 150
2.2
2.4
1.5
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Channel 1
Parameter
t
v
10 sec
Maximum J
M i
Junction-to-Ambient
NO TAG
ti t A bi t
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71137
S-31726—Rev. B, 18-Aug-03
www.vishay.com
Steady-State
Steady-State
R
thJA
R
thJC
Channel 2
Typ
43
82
25
Symbol
Typ
72
100
51
Max
90
125
63
Max
53
100
30
Unit
_C/W
C/W
1
Si4826DY
Vishay Siliconix
MOSFET SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED).
Parameter
Static
Gate Threshold Voltage
V
GS( h)
GS(th)
I
GSS
V
DS
= V
GS
, I
D
= 250
mA
V
DS
= 0 V, V
GS
= 20 V
V
V
DS
= 24 V, V
GS
= 0 V
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 24 V, V
GS
= 0 V T
J
= 85_C
V
V,
On-State
On State Drain Current
a
I
D( )
D(on)
V
DS
= 5 V, V
GS
= 10 V
V
V
GS
= 10 V, I
D
= 6.3 A
Drain-Source On-State
Drain Source On State Resistance
a
r
DS( )
DS(on)
V
GS
= 10 V, I
D
= 9.5 A
V
GS
= 4.5 V, I
D
= 5.4 A
V
GS
= 4.5 V, I
D
= 8.2 A
Forward Transconductance
a
Diode Forward Voltage
a
g
f
fs
V
SD
V
DS
= 15 V, I
D
= 6.3 A
V
DS
= 15 V, I
D
= 9.5 A
I
S
= 1.3 A, V
GS
= 0 V
I
S
= 2.2 A, V
GS
= 0 V
Ch 1
Ch-1
Ch-2
Ch 1
Ch-1
Ch-2
Ch 1
Ch-1
Ch-2
Ch 1
Ch-1
Ch-2
Ch 1
Ch-1
Ch-2
Ch 1
Ch-1
Ch-2
Ch 1
Ch-1
Ch-2
Ch 1
Ch-1
Ch-2
Ch 1
Ch-1
Ch-2
20
30
0.018
0.0125
0.024
0.0165
17
28
0.7
0.75
1.1
1.1
V
S
0.022
0.0155
0.030
0.0205
W
A
0.8
1.0
100
100
1
1
15
15
mA
nA
V
Symbol
Test Condition
Min
Typ
Max
Unit
Gate-Body
Gate Body Leakage
Dynamic
b
Total Gate Charge
Q
g
Channel-1
V
DS
= 15 V, V
GS
= 5 V, I
D
= 6.3 A
Gate-Source
Gate Source Charge
Q
gs
Channel 2
Channel-2
V
DS
= 15 V, V
GS
= 5 V, I
D
= - 9.5 A
Gate-Drain
Gate Drain Charge
Q
gd
d
R
g
t
d( )
d(on)
t
r
t
d( ff)
d(off)
t
f
t
rr
I
F
= 1.3 A, di/dt = 100 A/ms
I
F
= 2.2 A, di/dt = 100
mA/ms
Channel-1
Ch
l1
V
DD
= 15 V, R
L
= 15
W
I
D
^
1 A, V
GEN
= 10 V, R
G
= 6
W
Channel 2
Channel-2
V
DD
= 15 V, R
L
= 15
W
I
D
^
1 A, V
GEN
= 10 V, R
G
= 6
W
A
V
Ch 1
Ch-1
Ch-2
Ch 1
Ch-1
Ch-2
Ch 1
Ch-1
Ch-2
Ch 1
Ch-1
Ch-2
Ch 1
Ch-1
Ch-2
Ch 1
Ch-1
Ch-2
Ch 1
Ch-1
Ch-2
Ch 1
Ch-1
Ch-2
Ch 1
Ch-1
Ch-2
1.5
0.5
10
15
5
5
26
44
8
12
30
32
8.0
15
1.75
5.3
3.2
4.6
5.1
2.6
20
30
10
10
50
80
16
24
60
70
ns
W
nC
12
23
Gate Resistance
Turn-On
Turn On Delay Time
Rise Time
Turn-Off
Turn Off Delay Time
Fall Time
Source-Drain
Source Drain Reverse Recovery Time
Notes
a. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
b. Guaranteed by design, not subject to production testing.
www.vishay.com
2
Document Number: 71137
S-31726—Rev. B, 18-Aug-03
Si4826DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
30
V
GS
= 10 thru 4 V
24
I
D
- Drain Current (A)
I
D
- Drain Current (A)
24
30
CHANNEL 1
Transfer Characteristics
18
3V
18
12
12
T
C
= 125_C
6
25_C
6
1V
0
0
2
4
6
8
10
2V
- 55_C
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.05
1000
Capacitance
DS(on)
- On-Resistance (
W
)
C - Capacitance (pF)
0.04
800
C
iss
600
0.03
V
GS
= 4.5 V
0.02
V
GS
= 10 V
400
C
oss
200
C
rss
r
0.01
0.00
0
6
12
18
24
30
0
0
6
12
18
24
30
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
Gate Charge
10
V
GS
- Gate-to-Source Voltage (V)
V
DS
= 15 V
I
D
= 6.3 A
8
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0
0
3
6
9
12
15
Q
g
- Total Gate Charge (nC)
Document Number: 71137
S-31726—Rev. B, 18-Aug-03
0.4
- 50
On-Resistance vs. Junction Temperature
V
GS
= 10 V
I
D
= 6.3 A
6
4
2
r
DS(on)
- On-Resistance (
W)
(Normalized)
- 25
0
25
50
75
100
125
150
T
J
- Junction Temperature (_C)
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Si4826DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
40
0.10
CHANNEL 1
On-Resistance vs. Gate-to-Source Voltage
DS(on)
- On-Resistance (
W
)
0.08
I
S
- Source Current (A)
T
J
= 150_C
10
0.06
T
J
= 25_C
0.04
I
D
= 6.3 A
0.02
r
1
0.0
0.00
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
2
4
6
8
10
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Threshold Voltage
0.6
0.4
V
GS(th)
Variance (V)
0.2
- 0.0
- 0.2
- 0.4
- 0.6
20
- 0.8
- 1.0
- 50
0
- 25
0
25
50
75
100
T
J
- Temperature (_C)
125
150
I
D
= 250
mA
Power (W)
80
100
Single Pulse Power, Junction-to-Ambient
60
40
0.001
0.01
0.1
Time (sec)
1
10
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
0.05
t
1
P
DM
0.02
t
2
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 100_C/W
t
1
t
2
Single Pulse
0.01
10
-4
10
-3
10
-2
10
-1
1
Square Wave Pulse Duration (sec)
10
3. T
JM
- T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
100
600
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4
Document Number: 71137
S-31726—Rev. B, 18-Aug-03
Si4826DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
CHANNEL 1
Normalized Thermal Transient Impedance, Junction-to-Foot
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
-4
10
-3
10
-2
10
-1
Square Wave Pulse Duration (sec)
1
10
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
40
V
GS
= 10 thru 4 V
32
I
D
- Drain Current (A)
I
D
- Drain Current (A)
32
40
CHANNEL 2
Transfer Characteristics
24
24
T
C
= 125_C
16
16
8
3V
2V
8
25_C
- 55_C
0
0
2
4
6
8
10
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.030
2500
Capacitance
r
DS(on)
- On-Resistance (
W
)
0.024
V
GS
= 4.5 V
0.018
V
GS
= 10 V
0.012
C - Capacitance (pF)
2000
C
iss
1500
1000
C
oss
0.006
500
C
rss
0.000
0
8
16
24
32
40
0
0
6
12
18
24
30
I
D
- Drain Current (A)
Document Number: 71137
S-31726—Rev. B, 18-Aug-03
V
DS
- Drain-to-Source Voltage (V)
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