SFH628A, SFH6286
Vishay Semiconductors
Optocoupler, Phototransistor Output, AC Input, Low Input Current
FEATURES
• High common mode interference immunity
• Isolation test voltage, 5300 V
RMS
• Low coupling capacitance
• Good CTR linearity depending on forward
current
1
A/C
1
i179080
• Low CTR degradation
4
3
C
E
• High collector emitter voltage, V
CEO
= 55 V
1
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC and
WEEE 2002/96/EC
C/A
2
DESCRIPTION
The SFH628A (DIP) and SFH6286 (SMD) feature a high
current transfer ratio, low coupling capacitance and high
isolation voltage. These couplers have a GaAs infrared
emitting diode, which is optically coupled to a silicon planar
phototransistor detector, and is incorporated in a plastic
DIP-4 or SMD package.
The coupling devices are designed for signal transmission
between two electrically separated circuits.
The couplers are end-stackable with 2.54 mm lead spacing.
Creepage and clearance distances of > 8.0 mm are achieved
with option 6. This version complies with IEC 60950
(DIN VDE 0805) for reinforced insulation to an operation
voltage of 400 V
RMS
or DC.
APPLICATIONS
• Telecom
• Industrial controls
• Battery powered equipment
• Office machines
AGENCY APPROVALS
• UL1577, file no. E52744 system code J
• DIN EN 60747-5-5 (VDE 0884) available with option 1
• BSI IEC 60950; IEC 60065
ORDER INFORMATION
PART
SFH628A-2
SFH628A-3
SFH628A-4
SFH6286-2
SFH6286-3
SFH6286-4
SFH628A-2X006
SFH628A-3X006
SFH628A-3X007
SFH628A-4X006
Note
For additional information on the available options refer to option information.
REMARKS
CTR 63 % to 200 %, DIP-4
CTR 100 % to 320 %, DIP-4
CTR 160 % to 500 %, DIP-4
CTR 63 % to 200 %, SMD-4
CTR 100 % to 320 %, SMD-4
CTR 160 % to 500 %, SMD-4
CTR 63 % to 200 %, DIP-4 400 mil (option 6)
CTR 100 % to 320 %, DIP-4 400 mil (option 6)
CTR 100 % to 320 %, SMD-4 (option 7)
CTR 160 % to 500 %, DIP-4 400 mil (option 6)
ABSOLUTE MAXIMUM RATINGS
PARAMETER
INPUT
DC forward current
Surge forward current
Power dissipation
(1)
TEST CONDITION
SYMBOL
I
F
VALUE
± 50
± 2.5
76
UNIT
mA
A
mW
t
≤
10 µs
I
FSM
P
diss
Document Number: 83722
Rev. 1.7, 10-Dec-08
For technical questions, contact: optocoupler.answers@vishay.com
www.vishay.com
673
SFH628A, SFH6286
Vishay Semiconductors
Optocoupler, Phototransistor Output,
AC Input, Low Input Current
(1)
ABSOLUTE MAXIMUM RATINGS
PARAMETER
OUTPUT
Collector emitter voltage
Emitter collector voltage
Collector current
Power dissipation
COUPLER
Isolation test voltage
between emitter and detector
Creepage distance
Clearance distance
Insulation thickness between
emitter and detector
Comparative tracking index per DIN IEC112/
VDE 0303 part 1
Isolation resistance
Storage temperature range
Ambient temperature range
Soldering temperature
(2)
TEST CONDITION
SYMBOL
V
CE
V
EC
I
C
VALUE
55
7
50
100
150
UNIT
V
V
mA
mA
mW
t
p
≤
1.0 ms
I
C
P
diss
V
ISO
5300
≥
7
≥
7
≥
0.4
175
V
RMS
mm
mm
mm
V
IO
= 500 V, T
amb
= 25 °C
V
IO
= 500 V, T
amb
= 100 °C
R
IO
R
IO
T
stg
T
amb
≥
10
12
≥
10
11
- 55 to + 150
- 55 to +100
260
Ω
Ω
°C
°C
°C
max. 10 s, dip soldering distance
to seating plane
≥
1.5 mm
T
sld
Notes
(1)
T
amb
= 25 °C, unless otherwise specified.
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum
ratings for extended periods of the time can adversely affect reliability.
(2)
Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through
hole devices (DIP).
ELECTRICAL CHARACTERISTICS
PARAMETER
INPUT
Forward voltage
Capacitance
Thermal resistance
OUTPUT
Collector emitter leakage current
Collector emitter capacitance
Thermal resistance
COUPLER
I
F
= ± 1 mA, I
C
= 0.5 mA
Collector emitter saturation
voltage
I
F
= ± 1 mA, I
C
= 0.8 mA
I
F
= ± 1 mA, I
C
= 1.25 mA
SFH628A-2
SFH6286-2
SFH628A-3
SFH6286-3
SFH628A-4
SFH6286-4
V
CEsat
V
CEsat
V
CEsat
V
CEsat
V
CEsat
V
CEsat
0.25
0.25
0.25
0.25
0.25
0.25
0.4
0.4
0.4
0.4
0.4
0.4
V
V
V
V
V
V
V
CE
= 10 V
V
CE
= 5 V, f = 1 MHz
I
CEO
C
CE
R
thja
10
7
500
200
nA
pF
K/W
I
F
= 5 mA
V
R
= 0 V, f = 1 MHz
V
F
C
O
R
thja
1.1
45
1070
1.5
V
pF
K/W
TEST CONDITION
PART
SYMBOL
MIN.
TYP.
MAX.
UNIT
Note
T
amb
= 25 °C, unless otherwise specified.
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
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674
For technical questions, contact: optocoupler.answers@vishay.com
Document Number: 83722
Rev. 1.7, 10-Dec-08
SFH628A, SFH6286
Optocoupler, Phototransistor Output,
AC Input, Low Input Current
CURRENT TRANSFER RATIO
PARAMETER
TEST CONDITION
I
F
= ± 1.0 mA, V
CE
= 0.5 V
I
F
= ± 0.5 mA, V
CE
= 1.5 V
I
F
= ± 1 mA, V
CE
= 0.5 V
I
C
/I
F
I
F
= ± 0.5 mA, V
CE
= 1.5 V
I
F
= ± 1 mA, V
CE
= 0.5 V
I
F
= ± 0.5 mA, V
CE
= 1.5 V
PART
SFH628A-2
SFH6286-2
SFH628A-2
SFH6286-2
SFH628A-3
SFH6286-3
SFH628A-3
SFH6286-3
SFH628A-4
SFH6286-4
SFH628A-4
SFH6286-4
SYMBOL
CTR
CTR
CTR
CTR
CTR
CTR
CTR
CTR
CTR
CTR
CTR
CTR
MIN.
63
63
32
32
100
100
50
50
160
160
80
80
250
250
160
160
500
500
100
100
320
320
TYP.
MAX.
200
200
UNIT
%
%
%
%
%
%
%
%
%
%
%
%
Vishay Semiconductors
SWITCHING CHARACTERISTICS
PARAMETER
Turn-on time
Rise time
Turn-off time
Fall time
± I
F
TEST CONDITION
V
CC
= 5 V, I
C
= 2 mA, R
L
= 100
Ω
V
CC
= 5 V, I
C
= 2 mA, R
L
= 100
Ω
V
CC
= 5 V, I
C
= 2 mA, R
L
= 100
Ω
V
CC
= 5 V, I
C
= 2 mA, R
L
= 100
Ω
R
L
SYMBOL
t
on
t
r
t
off
t
f
MIN.
TYP.
MAX.
6
3.5
5.5
5
UNIT
µs
µs
µs
µs
V
CC
I
C
10
%
Input pulse
Output pulse
90
%
47
Ω
t
on
isfh618a_11
isfh618a_12
t
r
t
f
t
off
Fig. 1 - Test Circuit
Fig. 2 - Test Circuit and Waveforms
SAFETY AND INSULATION RATINGS
PARAMETER
Climatic classification
(according to IEC 68 part 1)
Comparative tracking index
V
IOTM
V
IORM
P
SO
I
SI
T
SI
Creepage distance
Clearance distance
Creepage distance
Clearance distance
Insulation thickness,
reinforced rated
standard DIP-8
standard DIP-8
400 mil DIP-8
400 mil DIP-8
per IEC 60950 2.10.5.1
7
7
8
8
0.4
CTI
175
10000
890
400
275
175
TEST CONDITION
SYMBOL
MIN.
TYP.
55/100/21
399
V
V
mW
mA
°C
mm
mm
mm
mm
mm
MAX.
UNIT
Note
As per IEC 60747-5-2, § 7.4.3.8.1, this optocoupler is suitable for "safe electrical insulation" only within the safety ratings. Compliance with the
safety ratings shall be ensured by means of protective circuits.
Document Number: 83722
Rev. 1.7, 10-Dec-08
For technical questions, contact: optocoupler.answers@vishay.com
www.vishay.com
675
SFH628A, SFH6286
Vishay Semiconductors
TYPICAL CHARACTERISTICS
T
amb
= 25 °C, unless otherwise specified
Optocoupler, Phototransistor Output,
AC Input, Low Input Current
CTR
280
%
240
200
160
120
80
40
VCE = 0.5 V, CTR = f (TA)
V
F
I
F = 5mA
I
F = 2mA
I
F = 1mA
I
F = 0.5mA
0
20
40
60
T
A
ºC
100
1.2
V
1.15
1.1
1.05
1
0.95
0
- 40 - 20
IF = 1.0 mA, VF = f (TA)
0
- 40 - 20
isfh618a_01
0
20
40
60
T
A
ºC
100
isfh618a_04
Fig. 3 - Current Transfer Ratio (typ.)
Fig. 6 - Diode Forward Voltage (typ.)
CTR
280
%
240
200
160
120
80
40
0
- 40 - 20
0
20
40
I
F = 5mA
I
F = 2mA
I
F = 1mA
20
pF
C
CE
16
12
8
4
I
F = 0.5mA
60
T
A
ºC
100
TA = 25 ºC, f = 1.0 MHz
CEE = f (VCE)
0
10-2
isfh618a_05
10-1
100
101
V
CE
V
102
isfh618a_02
Fig. 4 - Current Transfer Ratio (typ.)
Fig. 7 - Transistor Capacitance
1.2
V
1.15
Vr
1.1
1.05
1
0.95
0.9
10-1
isfh618a_03
TA = 25 ºC, VF = f (IF)
I
CE
12
mA
10
8
6
4
2
0
10
-2
OHOO2119
TA = 25 ºC,
CE = f
(VCE, IF)
IF = 5 mA
IF = 2 mA
IF = 1 mA
IF = 0.5 mA
100
I
F
mA
101
10
-1
10
0
10
1
V
CE
V
10
2
isfh618a_06
Fig. 5 - Diode Forward Voltage (typ.)
Fig. 8 - Output Characteristics
www.vishay.com
676
For technical questions, contact: optocoupler.answers@vishay.com
Document Number: 83722
Rev. 1.7, 10-Dec-08
SFH628A, SFH6286
Optocoupler, Phototransistor Output,
AC Input, Low Input Current
Vishay Semiconductors
100
mA
/
F
75
IF = f (TA)
t
103
μ5
102
t off
t
F
t
on
t
R
TA = 25 ºC, IF = 1.0 mA,
VCC = 5.0 V, tON, tR,
tOFF, tF, = f (RL)
103
104
R
L
Ω
105
50
101
25
0
0
25
50
75 ºC
T
A
100
100
102
isfh618a_09
isfh618a_07
Fig. 9 - Permissible Forward Current Diode
Fig. 11 - Switching Times (Typ.)
P
tot
200
mW
175
150
125
100
75
50
25
0
0
Ptot = f (TA)
Transistor
Diode
25
50
T
A
75
ºC
100
isfh618a_08
Fig. 10 - Permissible Power Dissipation
PACKAGE DIMENSIONS
in inches (millimeters)
2
1
Pin one ID
0.255 (6.48)
0.268 (6.81)
ISO method A
3
4
0.179 (4.55)
0.190 (4.83)
0.300 (7.62) typ.
0.030 (0.76)
0.045 (1.14)
0.031 (0.79) typ.
0.050 (1.27) typ.
0.130 (3.30)
0.150 (3.81)
4°
typ.
0.018 (0.46)
i178027
0.230 (5.84)
0.250 (6.35)
10°
0.110 (2.79)
0.130 (3.30)
3° to 9°
0.008 (0.20)
0.012 (0.30)
0.020 (0.508)
0.035 (0.89)
0.050 (1.27)
0.100 (2.54)
0.022 (0.56)
Document Number: 83722
Rev. 1.7, 10-Dec-08
For technical questions, contact: optocoupler.answers@vishay.com
www.vishay.com
677
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