SFH600
TRIOS
Phototransistor Optocoupler
FEATURES
• High Current Transfer Ratios
SFH600-0, 40 to 80%
SFH600-1, 63 to 125%
SFH600-2, 100 to 200%
SFH600-3, 160 to 320%
• Isolation Test Voltage (1.0 s), 5300 V
RMS
•
V
CEsat
0.25 (
≤
0.4) V,
I
F
=10 mA,
I
C
=2.5 mA
• High Quality Premium Device
• Long Term Stability
•
Storage Temperature, –55
°
to +150
°
C
• Field Effect Stable by TRIOS (TRansparent
IOn Shield)
• Underwriters Lab File #E52744
V
•
VDE 0884 Available with Option 1
D E
Dimensions in inches (mm)
3
.248 (6.30)
.256 (6.50)
4
5
6
2
1
pin one ID
Anode 1
Cathode 2
NC 3
.300 (7.62)
typ.
6
5
4
Base
Collector
Emitter
.335 (8.50)
.343 (8.70)
.039
(1.00)
Min.
4°
typ.
.018 (0.45)
.022 (0.55)
.048 (0.45)
.022 (0.55)
.130 (3.30)
.150 (3.81)
18°
.031 (0.80) min.
.031 (0.80)
.035 (0.90)
.100 (2.54) typ.
3°–9°
.010 (.25)
typ.
.300–.347
(7.62–8.81)
DESCRIPTION
The SFH600 is an optocoupler with a GaAs LED emit-
ter which is optically coupled with a silicon planar pho-
totransistor detector. The component is packaged in a
plastic plug-in case, 20 AB DIN 41866.
The coupler transmits signals between two electri-
cally isolated circuits. The potential difference
between the circuits to be coupled is not allowed to
exceed the maximum permissible insulating voltage.
Maximum Ratings
Emitter
Reverse Voltage ............................................6.0 V
DC Forward Current....................................60 mA
Surge Forward Current (t
p
=10
µ
s) ................2.5 A
Total Power Dissipation ............................100 mW
Detector
Collector-Emitter Voltage............................... 70 V
Emitter-Base Voltage.................................... 7.0 V
Collector Currentt........................................50 mA
Collector Current (t=1 ms) ........................100 mA
Power Dissipation ....................................150 mW
Package
Isolation Test Voltage (between emitter and
detector referred to climate DIN 40046,
part 2, Nov. 74) (t=1.0 s) ..................5300 V
RMS
Creepage ................................................
≥
7.0 mm
Clearance
..................................................... ≥
7.0 mm
Isolation Thickness between Emitter &
Detector ..................................................
≥
0.4 mm
Comparative Tracking Index per
DIN IEC 112/VDE0303, part 1 ..................... 175
Isolation Resistance
V
IO
=500 V,
T
A
=25
°
C
................................ ≥
10
12
Ω
V
IO
=500 V,
T
A
=100
°
C
.............................. ≥
10
11
Ω
Storage Temperature Range......–55
°
C to +150
°
C
Ambient Temperature Range .....–55
°
C to +100
°
C
Junction Temperature ................................. 100
°
C
Soldering Temperature (max. 10 s, dip
soldering: distance to seating plane
≥
1.5 mm) ................................................. 260
°
C
Document Number: 83662
Revision 17-August-01
.114 (2.90)
.130 (3.0)
Characteristics
(
T
A
=25
°
C)
Symbol
Emitter
Forward Voltage
Breakdown Voltage
Reverse Current
Capacitance
Thermal Resistance
Detector
Capacitance
Collector-Emitter
Collector-Base
Emitter-Base
Thermal Resistance
Package
Saturation Voltage,
Collector-Emitter
Coupling Capacitance
V
CEsat
C
IO
0.25 (
≤
0.4)
0.6
V
pF
I
F
=10 mA,
I
C
=2.5 mA
V
IO
=0
f=1.0 MHz
pF
C
CE
C
CB
C
EB
R
THJamb
5.2
6.5
9.5
500
K/W
f=1.0 MHz
V
CE
=5.0 V
V
CB
=5.0 V
V
EB
=5.0 V
—
V
F
V
BR
I
R
C
O
R
THJamb
1.25 (
≤
1.65)
≥
6.0
0.01 (
≤
10)
25
750
µ
A
pF
K/W
V
I
F
=60 mA
I
R
=10
µ
A
V
R
=6.0 V
V
F
=0 V
f=1.0 MHz
—
Unit
Condition
www.vishay.com
2–217
Figure 6. Current Transfer Ratio versus
Diode Current
(T
A
=50°C,
V
CE
=5.0 V)
I
C
/I
F
=f (I
F
)
Figure 9. Transistor Characteristics
(HFE =550) SFH600-2, -3
I
C
=f(V
CE
)
(T
A
=25°C,
I
F
=0)
Figure 12. Collector Emitter
Off-state Current
I
CEO
=f (V, T)
(T
A
=25°C,
I
F
=0)
Figure 7. Current Transfer Ratio versus
Diode Current
(T
A
=75°C,
V
CE
=5.0 V)
I
C
/I
F
=f (I
F
)
Figure 10. Output Characteristics
SFH600-2, -3
(T
A
=25°C)
I
C
=f(V
CE
)
Figure 13. Saturation Voltage
versus Collector Current and
Modulation Depth SFH600-0
V
CEsat
=f (I
C
) (T
A
=25°C)
Figure 8. Current Transfer Ratio
versus Temperature
(I
F
=10 mA,
V
CE
=5.0 V)
I
C
/I
F
=f(T)
Figure 11. Forward Voltage
V
F
=f (I
F
)
Figure 14. Saturation Voltage versus
Collector Current and Modulation
Depth SFH600-1
V
CEsat
=f (I
C
) (T
A
=25°C)
Document Number: 83662
Revision 17-August-01
www.vishay.com
2–219
Figure 15. Saturation Voltage versus
Collector Current and Modulation
Depth SFH600-2
V
CEsat
=f (I
C
) (T
A
=25°C)
Figure 17. Permissible Pulse Load
D=parameter,
T
A
=25°C,
I
F
=f (t
p
)
Figure 19. Permissible Forward
Current Diode
P
tot
=f (T
A
)
Figure 16. Saturation Voltage versus
Collector Current and Modulation
Depth SFH600-3
V
CEsat
=f (I
C
) (T
A
=25°C)
Figure 18. Permissible Power
Dissipation for Transistor and Diode
P
tot
=f (T
A
)
Figure 20. Transistor Capacitance
C=f(V
O
) (T
A
=25°C, f=1.0 MHz)
Document Number: 83662
Revision 17-August-01
www.vishay.com
2–220
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