Single P-Channel 20-V (D-S) MOSFET with Schottky Diode
MOSFET PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
(Ω)
0.048 at V
GS
= - 4.5 V
- 20
0.068 at V
GS
= - 2.5 V
0.090 at V
GS
= - 1.8 V
I
D
(A)
- 6.3
- 5.3
- 4.6
FEATURES
•
Halogen-free Option Available
• TrenchFET
®
Power MOSFETS: 1.8 V Rated
• Ultra-Low Thermal Resistance, PowerPAK
®
Package with Low 1.07 mm Profile
RoHS
COMPLIANT
APPLICATIONS
• Charger Switching
SCHOTTKY PRODUCT SUMMARY
V
KA
(V)
20
V
f
(V)
Diode Forward Voltage
0.48 V at 0.5 A
I
F
(A)
1.0
PowerPAK 1212-8
S
A
K
3.30 mm
1
2
3.30 mm
A
S
3
4
K
G
G
8
7
K
D
6
5
D
Bottom View
D
P-Channel MOSFET
A
Ordering Information:
Si7705DN-T1-E3 (Lead (Pb)-free)
Si7705DN-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage (MOSFET and Schottky)
Reverse Voltage (Schottky)
Gate-Source Voltage (MOSFET)
Continuous Drain Current (T
J
= 150 °C) (MOSFET)
a
Pulsed Drain Current (MOSFET)
Continuous Source Current (MOSFET Diode
Average Foward Current (Schottky)
Pulsed Foward Current (Schottky)
Maximum Power Dissipation (MOSFET)
a
Maximum Power Dissipation
(Schottky)
a
Conduction)
a
T
A
= 25 °C
T
A
= 85 °C
Symbol
V
DS
V
KA
V
GS
I
D
I
DM
I
S
I
F
I
FM
T
A
= 25 °C
T
A
= 85 °C
T
A
= 25 °C
T
A
= 85 °C
P
D
2.8
1.5
2.0
1.0
- 55 to 150
10 s
- 20
20
±8
- 6.3
- 4.5
- 20
- 2.3
1.0
7
1.3
0.7
1.1
0.6
- 1.1
- 4.3
- 3.1
A
Steady State
Unit
V
W
°C
260
Soldering Recommendations
b,c
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. See Solder Profile (
http://www.vishay.com/ppg?73257
). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 71607
S-81544-Rev. D, 07-Jul-08
www.vishay.com
1
Operating Junction and Storage Temperature Range
T
J
, T
stg
Si7705DN
Vishay Siliconix
THERMAL RESISTANCE RATINGS
Parameter
t
≤
10 s
Junction-to-Ambient
a
Steady State
Junction-to-Case (Drain)
Steady State
Device
MOSFET
Schottky
MOSFET
Schottky
MOSFET
Schottky
Symbol
Typical
35
51
75
91
4
10
Maximum
44
64
94
115
5
12
Unit
R
thJA
°C/W
R
thJC
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
MOSFET SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Diode Forward Voltage
a
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
V
DD
= - 10 V, R
L
= 10
Ω
I
D
≅
- 1 A, V
GEN
= - 4.5 V, R
G
= 6
Ω
V
DS
= - 10 V, V
GS
= - 4.5 V, I
D
= - 6.3 A
11
2.7
1.9
70
75
20
45
105
110
30
70
ns
17
nC
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
V
SD
V
DS
= V
GS
, I
D
= - 250 µA
V
DS
= 0 V, V
GS
= ± 8 V
V
DS
= - 20 V, V
GS
= 0 V
V
DS
= - 20 V, V
GS
= 0 V, T
J
= 85 °C
V
DS
≤
- 5 V, V
GS
= - 4.5 V
V
GS
= - 4.5 V, I
D
= - 6.3 A
V
GS
= - 2.5 V, I
D
= - 5.3 A
V
GS
= - 1.8 V, I
D
= - 1 A
V
DS
= - 10 V, I
D
= - 6.3 A
I
S
= - 2.3 A, V
GS
= 0 V
- 20
0.040
0.054
0.070
14
- 0.8
- 1.2
0.048
0.068
0.090
S
V
Ω
- 0.45
- 1.0
± 100
-1
-5
V
nA
µA
A
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
SCHOTTKY SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Forward Voltage Drop
Symbol
V
F
Test Conditions
I
F
= 0.5 A
I
F
= 0.5 A, T
J
= 125 °C
V
r
= 20 V
Maximum Reverse Leakage Current
Junction Capacitance
I
rm
C
T
V
r
= 20 V, T
J
= 85 °C
V
r
= 20 V, T
J
= 125 °C
V
r
= 10 V
Min.
Typ.
0.42
0.33
0.002
0.10
1.5
31
Max.
0.48
0.4
0.100
1
10
pF
mA
Unit
V
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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