This P-Channel 2.5V specified MOSFET uses a rugged
gate PowerTrench process. It has been optimized for
power management applications with a wide range of
gate drive voltage (2.5V – 12V).
Features
•
–11.5 A, –20 V. R
DS(ON)
= 12 mΩ @ V
GS
= –4.5 V
R
DS(ON)
= 17.5 mΩ @ V
GS
= –2.5 V
•
Fast switching speed.
•
High performance trench technology for extremely
low R
DS(ON)
•
High power and current handling capability
Applications
•
Power management
•
Load switch
•
Battery protection
D
D
D
D
5
6
4
3
2
1
SO-8
S
S
S
G
7
8
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
Drain-Source Voltage
Gate-Source Voltage
Drain Current
– Continuous
– Pulsed
T
A
=25 C unless otherwise noted
o
Parameter
Ratings
–20
±
12
(Note 1a)
Units
V
V
A
W
–11.5
–50
2.5
1.2
1.0
–55 to +150
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
T
J
, T
STG
Operating and Storage Junction Temperature Range
°C
Thermal Characteristics
R
θJA
R
θJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
50
25
°C/W
°C/W
Package Marking and Ordering Information
Device Marking
4463
Device
Si4463DY
Reel Size
13’’
Tape width
12mm
Quantity
2500 units
2001
Fairchild Semiconductor International
Si4463DY Rev A(W)
Si4463DY
Electrical Characteristics
Symbol
BV
DSS
∆BV
DSS
∆T
J
I
DSS
I
GSSF
I
GSSR
T
A
= 25°C unless otherwise noted
Parameter
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
(Note 2)
Test Conditions
V
GS
= 0 V, I
D
= –250
µA
I
D
= –250
µA,
Referenced to 25°C
V
DS
= –16 V,
V
GS
= 12 V,
V
GS
= –12 V,
V
GS
= 0 V
V
DS
= 0 V
V
DS
= 0 V
Min
–20
Typ
Max Units
V
Off Characteristics
–12
–1
100
–100
mV/°C
µA
nA
nA
On Characteristics
V
GS(th)
∆V
GS(th)
∆T
J
R
DS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
On–State Drain Current
Forward Transconductance
V
DS
= V
GS
, I
D
= –250
µA
I
D
= –250
µA,
Referenced to 25°C
V
GS
= –4.5 V,
I
D
= –11.5 A
I
D
= –9.5 A
V
GS
= –2.5 V,
V
GS
= –4.5 V, I
D
= –11.5A, T
J
=125°C
V
GS
= –4.5 V,
V
DS
= –10 V,
V
DS
= –5 V
I
D
= –10 A
–0.6
–0.8
3
10
14
13
–1.5
V
mV/°C
12
17.5
18
mΩ
I
D(on)
g
FS
–50
49
A
S
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(Note 2)
V
DS
= –10 V,
f = 1.0 MHz
V
GS
= 0 V,
4481
1532
540
pF
pF
pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
V
DD
= –5 V,
V
GS
= –4.5 V,
I
D
= –1 A,
R
GEN
= 6
Ω
15
15
120
60
30
30
240
120
60
ns
ns
ns
ns
nC
nC
nC
V
DS
= –10 V,
V
GS
= –4.5 V
I
D
= –11.5 A,
41
6.4
11.8
Drain–Source Diode Characteristics and Maximum Ratings
I
S
V
SD
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
V
GS
= 0 V, I
S
= –1.5 A
Voltage
–2.1
(Note 2)
A
V
–0.65
–1.2
Notes:
1.
R
θJA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
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