Si6801DQ
Vishay Siliconix
N- and P-Channel, Reduced Q
g
, Fast Switching MOSFET
PRODUCT SUMMARY
V
DS
(V)
N-Channel
20
r
DS(on)
(W)
0.160 @ V
GS
= 4.5 V
0.260 @ V
GS
= 3.0 V
I
D
(A)
"1.9
"1.5
"1.7
"1.3
P-Channel
–20
0.190 @ V
GS
= –4.5 V
0.280 @ V
GS
= –3.0 V
D
1
S
2
TSSOP-8
D
1
S
1
S
1
G
1
1
2
3
4
Top View
S
1
N-Channel MOSFET
D
2
P-Channel MOSFET
D
8
D
2
S
2
S
2
G
2
G
1
G
2
Si6801DQ
7
6
5
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
T
A
= 25_C
T
A
= 70_C
T
A
= 25_C
T
A
= 70_C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
stg
N-Channel
20
"12
"1.9
"1.5
"8
1.0
1.0
P-Channel
–20
Unit
V
"1.7
"1.3
A
–1.0
W
0.64
–55 to 150
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
Notes
a. Surface Mounted on FR4 Board, t
v
10 sec.
Document Number: 70187
S-56944—Rev. D, 23-Nov-98
www.vishay.com
S
FaxBack 408-970-5600
Symbol
R
thJA
N- or P-Channel
125
Unit
_C/W
2-1
Si6801DQ
Vishay Siliconix
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250
mA
V
DS
= V
GS
, I
D
= –250
mA
V
DS
= 0 V, V
GS
=
"12
V
V
DS
= 20 V, V
GS
= 0 V
Zero Gate Voltage Drain Current
Z
G
V l
D i C
I
DSS
V
DS
= –20 V, V
GS
= 0 V
V
DS
= 20 V, V
GS
= 0 V, T
J
= 70_C
V
DS
= –20 V, V
GS
= 0 V, T
J
= 70_C
On-State Drain Current
a
I
D(on)
V
DS
= 5 V, V
GS
= 4.5 V
V
DS
= –5 V, V
GS
= –4.5 V
V
GS
= 4.5 V, I
D
= 1.9 A
D i S
O S
R i
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= –4.5 V, I
D
= –1.7 A
V
GS
= 3.0 V, I
D
= 1.5 A
V
GS
= –3.0 V, I
D
= –1.3 A
Forward Transconductance
a
g
fs
V
DS
= 15 V, I
D
= 1.9 A
V
DS
= –15 V, I
D
= –1.7 A
I
S
= 1.0 A, V
GS
= 0 V
I
S
= –1.0 A, V
GS
= 0 V
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
6
A
–6
0.120
0.155
0.160
0.210
5.4
S
4.0
0.77
–0.77
1.2
V
–1.2
0.160
0.190
0.260
0.280
W
0.6
V
–0.6
"100
"100
1
–1
25
–25
mA
A
nA
Symbol
Test Condition
Min
Typ
Max
Unit
Gate-Body Leakage
I
GSS
Diode Forward Voltage
a
V
SD
Dynamic
b
N-Ch
Total Gate Charge
Q
g
N-Channel
N Ch
l
V
DS
= 3 5 V V
GS
= 4 5 V I
D
= 0.3 A
03
3.5 V,
4.5 V,
P-Channel
P Ch
l
V
DS
= –3.5 V, V
GS
= –4.5 V
I
D
= –0.3 A
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
Turn-On Delay Time
t
d(on)
N-Channel
N Ch
l
V
DD
= 3.5 V, R
L
= 11.5
W
I
D
^
0.3 A, V
GEN
= 4.5 V, R
G
= 6
W
P-Channel
V
DD
= –3.5 V R
L
= 11.5
W
3 5 V,
11 5
I
D
^
–0.3 A, V
GEN
= –4.5 V, R
G
= 6
W
0.3
4.5
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
Fall Time
Source-Drain
Reverse R
R
Recovery Time
Ti
t
f
N-Channel—I
F
= 1.0 A, di/dt = 100 A/ms
P-Channel—I
F
= –1.0 A, di/dt = 100 A/ms
P-Ch
N-Ch
P-Ch
1.7
3.5
0.26
nC
C
0.76
0.41
0.70
7.3
6.0
10.0
10.0
11.0
10.0
6.0
7.0
31
35
15
15
20.0
20.0
20.0
ns
20.0
15
15
60
60
3.5
7.0
Gate-Source Charge
Q
gs
Gate-Drain Charge
Q
gd
Rise Time
t
r
Turn-Off Delay Time
t
d(off)
t
rr
Notes
a. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
b. Guaranteed by design, not subject to production testing.
www.vishay.com
S
FaxBack 408-970-5600
2-2
Document Number: 70187
S-56944—Rev. D, 23-Nov-98
Si6801DQ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
8
V
GS
= 4.5, 4, 3.5, 3V
6
I
D
– Drain Current (A)
2.5 V
I
D
– Drain Current (A)
6
25_C
8
T
C
= –55_C
125_C
N CHANNEL
Transfer Characteristics
4
4
2V
2
2
1.5 V
0
0
2
4
6
8
0
0
1
2
3
4
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.40
400
Capacitance
r
DS(on)
– On-Resistance (
W
)
0.32
C – Capacitance (pF)
300
0.24
V
GS
= 3 V
0.16
V
GS
= 4.5 V
200
C
oss
100
C
rss
C
iss
0.08
0
0
2
4
I
D
– Drain Current (A)
6
8
0
0
5
10
15
20
V
DS
– Drain-to-Source Voltage (V)
4.5
4.0
V
GS
– Gate-to-Source Voltage (V)
3.5
I
D
= 0.3 A
Gate Charge
2.0
On-Resistance vs. Junction Temperature
V
GS
= 4.5 V
I
DS
= 1.9 A
V
DS
= 2.7 V
3.0
2.5
2.0
1.5
1.0
0.5
0
0
0.5
1.0
1.5
2.0
Q
g
– Total Gate Charge (nC)
4.2 V
3.5 V
r
DS(on)
– On-Resistance (
W
)
(Normalized)
1.6
1.2
0.8
0.4
0
–50
–25
0
25
50
75
100
125
150
T
J
– Junction Temperature (_C)
www.vishay.com
S
FaxBack 408-970-5600
Document Number: 70187
S-56944—Rev. D, 23-Nov-98
2-3
Si6801DQ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
10
0.4
N CHANNEL
On-Resistance vs. Gate-to-Source Voltage
I
S
– Source Current (A)
T
J
= 150_C
r
DS(on)
– On-Resistance (
W
)
0.3
1
T
J
= 25_C
0.2
I
D
= 1.9 A
0.1
0.1
0.00
0.25
0.50
0.75
1.00
1.25
1.50
0
0
1
2
3
4
5
6
V
SD
– Source-to-Drain Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
0.5
Threshold Voltage
100
Single Pulse Power
0.3
V
GS(th)
Variance (V)
80
I
D
= 250
mA
–0.1
Power (W)
0.1
60
40
–0.3
20
–0.5
–50
0
–25
0
25
50
75
100
125
150
0.001
0.01
0.1
Time (sec)
1
10
T
J
– Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
0.2
Notes:
0.1
0.1
0.05
P
DM
t
1
t
2
1. Duty Cycle, D =
t
1
t
2
0.02
Single Pulse
0.01
10
–4
10
–3
10
–2
10
–1
2. Per Unit Base = R
thJA
= 125_C/W
3. T
JM
– T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
1
10
30
Square Wave Pulse Duration (sec)
www.vishay.com
S
FaxBack 408-970-5600
2-4
Document Number: 70187
S-56944—Rev. D, 23-Nov-98
Si6801DQ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
8
V
GS
= 4.5, 4, 3.5 V
3V
6
I
D
– Drain Current (A)
I
D
– Drain Current (A)
6
25_C
125_C
4
8
T
C
= –55_C
P CHANNEL
Transfer Characteristics
4
2.5 V
2
2V
2
0
0
2
4
6
8
0
0
1
2
3
4
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.40
700
600
r
DS(on)
– On-Resistance (
W
)
0.32
V
GS
= 3 V
0.24
V
GS
= 4.5 V
0.16
C – Capacitance (pF)
500
400
300
200
100
0
0
2
4
I
D
– Drain Current (A)
6
8
0
0
5
Capacitance
C
iss
C
oss
0.08
C
rss
10
15
20
V
DS
– Drain-to-Source Voltage (V)
4.5
4.0
V
GS
– Gate-to-Source Voltage (V)
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0
1
I
D
= 0.3 A
Gate Charge
2.0
On-Resistance vs. Junction Temperature
V
GS
= 4.5 V
I
DS
= 1.7 A
3.5 V
4.2 V
r
DS(on)
– On-Resistance (
W
)
(Normalized)
V
DS
= 2.7 V
1.6
1.2
0.8
0.4
2
3
4
0
–50
–25
0
25
50
75
100
125
150
Q
g
– Total Gate Charge (nC)
T
J
– Junction Temperature (_C)
Document Number: 70187
S-56944—Rev. D, 23-Nov-98
www.vishay.com
S
FaxBack 408-970-5600
2-5
模拟与混合信号
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
