Si4926DY
New Product
Vishay Siliconix
Asymmetrical Dual N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
Channel-1
30
Channel-2
r
DS(on)
(W)
0.022 @ V
GS
= 10 V
0.030 @ V
GS
= 4.5 V
0.0125 @ V
GS
= 10 V
0.017 @ V
GS
= 4.5 V
I
D
(A)
6.3
5.4
10.5
9.0
D
1
D
2
D
2
D
2
SO-8
S
1
G
1
S
2
G
2
1
2
3
4
Top View
8
7
6
5
D
1
D
2
D
2
D
2
S
1
N-Channel 1
MOSFET
S
2
N-Channel 2
MOSFET
G
1
G
2
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Channel 1
Parameter
P
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a
Maximum Power Dissipation
a
T
A
= 25_C
T
A
= 70_C
T
A
= 25_C
T
A
= 70_C
Channel 2
10 secs
30
20
Symbol
S b l
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
stg
10 secs
Steady State
Steady State
Unit
U i
V
6.3
5.4
30
1.3
1.4
0.9
5.3
4.2
10.5
8.5
40
7.5
6.0
A
0.9
1.0
0.64
–55 to 150
2.2
2.4
1.5
1.15
1.25
0.80
W
_C
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Channel 1
Parameter
P
Maximum Junction-to-Ambient
a
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71143
S-00238—Rev. A, 21-Feb-00
www.vishay.com
S
FaxBack 408-970-5600
t
v
10 sec
Steady-State
Steady-State
Channel 2
Typ
43
82
25
Symbol
S b l
R
thJA
R
thJC
Typ
72
100
51
Max
90
125
63
Max
53
100
30
Unit
U i
_C/W
2-1
Si4926DY
Vishay Siliconix
New Product
MOSFET SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Gate Threshold Voltage
V
GS(th)
I
GSS
V
DS
= V
GS
, I
D
= 250
mA
V
DS
= 0 V, V
GS
= 20 V
V
DS
= 24 V, V
GS
= 0 V
Z
G
V l
D i C
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 24 V, V
GS
= 0 V, T
J
= 85_C
On-State Drain Current
a
I
D(on)
V
DS
= 5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 6.3 A
Drain-Source On-State Resistance
a
D i S
O S
R i
r
DS(on)
V
GS
= 10 V, I
D
= 10.5 A
V
GS
= 4.5 V, I
D
= 5.4 A
V
GS
= 4.5 V, I
D
= 9.0 A
Forward Transconductance
a
Diode Forward Voltage
a
g
fs
V
SD
V
DS
= 15 V, I
D
= 6.3 A
V
DS
= 15 V, I
D
= 10.5 A
I
S
= 1.3 A, V
GS
= 0 V
I
S
= 2.2 A, V
GS
= 0 V
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
20
30
0.018
0.0105
0.024
0.0135
17
28
0.7
0.72
1.1
1.1
0.022
0.0125
0.030
0.017
S
W
0.8
0.8
100
100
1
1
15
15
A
A
mA
V
Symbol
Test Condition
Min
Typ
Max
Unit
Gate-Body Leakage
nA
V
Dynamic
b
Total Gate Charge
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
t
rr
I
F
= 1.3 A, di/dt = 100 A/ms
I
F
= 2.2 A, di/dt = 100
mA/ms
Channel 1
Ch
l
Channel-1
V
DD
= 15 V, R
L
= 15
W
I
D
^
1 A, V
GEN
= 10 V, R
G
= 6
W
Channel-2
V
DD
= 15 V R
L
= 15
W
V,
I
D
^
1 A, V
GEN
= 10 V, R
G
= 6
W
Channel 1
Channel-1
Ch
l
V
DS
= 15 V, V
GS
= 5 V, I
D
= 6.3 A
Channel-2
V,
V
DS
= 15 V V
GS
= 5 V, I
D
= –10.5 A
V
10 5
Gate-Drain Charge
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
8.0
18
1.75
3.6
3.2
7.8
10
13
5
10
26
37
8
27
30
35
20
30
10
20
50
80
16
50
60
70
ns
12
25
nC
C
Gate-Source Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Notes
a. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
b. Guaranteed by design, not subject to production testing.
www.vishay.com
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FaxBack 408-970-5600
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Document Number: 71143
S-00238—Rev. A, 21-Feb-00
Si4926DY
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
30
V
GS
= 10 thru 4 V
24
I
D
– Drain Current (A)
I
D
– Drain Current (A)
24
30
Vishay Siliconix
CHANNEL 1
Transfer Characteristics
18
3V
18
12
12
T
C
= 125_C
6
25_C
6
1V
0
0
2
4
6
8
10
2V
–55_C
0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.05
1000
Capacitance
DS(on)
– On-Resistance (
W
)
C – Capacitance (pF)
0.04
800
C
iss
600
0.03
V
GS
= 4.5 V
0.02
V
GS
= 10 V
400
C
oss
200
C
rss
r
0.01
0
0
6
12
18
24
30
0
0
6
12
18
24
30
I
D
– Drain Current (A)
V
DS
– Drain-to-Source Voltage (V)
Gate Charge
10
V
GS
– Gate-to-Source Voltage (V)
V
DS
= 15 V
I
D
= 6.3 A
8
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0
0
3
6
9
12
15
Q
g
– Total Gate Charge (nC)
Document Number: 71143
S-00238—Rev. A, 21-Feb-00
0.4
–50
On-Resistance vs. Junction Temperature
V
GS
= 10 V
I
D
= 6.3 A
6
4
2
r
DS(on)
– On-Resistance (
W)
(Normalized)
–25
0
25
50
75
100
125
150
T
J
– Junction Temperature (_C)
www.vishay.com
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Si4926DY
Vishay Siliconix
New Product
CHANNEL 1
On-Resistance vs. Gate-to-Source Voltage
0.10
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
40
DS(on)
– On-Resistance (
W
)
0.08
I
S
– Source Current (A)
T
J
= 150_C
10
0.06
T
J
= 25_C
0.04
I
D
= 6.3 A
0.02
r
1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
0
2
4
6
8
10
V
SD
– Source-to-Drain Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Threshold Voltage
0.6
0.4
V
GS(th)
Variance (V)
0.2
–0.0
–0.2
–0.4
–0.6
20
–0.8
–1
–50
0
–25
0
25
50
75
100
T
J
– Temperature (_C)
125
150
I
D
= 250
mA
Power (W)
80
100
Single Pulse Power, Junction-to-Ambient
60
40
0.001
0.01
0.1
Time (sec)
1
10
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
0.2
Notes:
0.1
0.1
0.05
t
1
P
DM
0.02
t
2
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 100_C/W
t
1
t
2
Single Pulse
0.01
10
–4
10
–3
10
–2
10
–1
1
Square Wave Pulse Duration (sec)
10
3. T
JM
– T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
100
600
www.vishay.com
S
FaxBack 408-970-5600
2-4
Document Number: 71143
S-00238—Rev. A, 21-Feb-00
Si4926DY
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
2
1
Duty Cycle = 0.5
Vishay Siliconix
CHANNEL 1
Normalized Thermal Transient Impedance, Junction-to-Foot
Normalized Effective Transient
Thermal Impedance
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
–4
10
–3
10
–2
10
–1
Square Wave Pulse Duration (sec)
1
10
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
40
V
GS
= 10 thru 4 V
32
I
D
– Drain Current (A)
3V
24
I
D
– Drain Current (A)
32
40
CHANNEL 2
Transfer Characteristics
24
16
16
T
C
= 125_C
8
25_C
–55_C
0
8
1, 2 V
0
0
2
4
6
8
10
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.030
2000
Capacitance
r
DS(on)
– On-Resistance (
W
)
0.024
C – Capacitance (pF)
1600
C
iss
1200
0.018
V
GS
= 4.5 V
0.012
V
GS
= 10 V
800
C
oss
0.006
400
C
rss
0
0
8
16
24
32
40
0
0
6
12
18
24
30
I
D
– Drain Current (A)
Document Number: 71143
S-00238—Rev. A, 21-Feb-00
V
DS
– Drain-to-Source Voltage (V)
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FaxBack 408-970-5600
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