SFH6315T
SFH6316T
SFH6343T
High Speed Optocoupler
FEATURES
• Surface Mountable
• Industry Standard SOIC-8 Footprint
• Compatible with Infrared Vapor Phase Reflow and
Wave Soldering Processes
• Isolation Voltage, 3000 V
RMS
• Very High Common Mode Transient Immunity:
15000 V/
µ
s at V
CM
=1500 V Guaranteed (SFH6343)
• High Speed: 1.0 Mb/s
• TTL Compatible
• Guaranteed AC and DC Performance Over
Temperature: 0
°
C to 70
°
C
• Open Collector Output
• Pin Compatible with HP Optocouplers
SFH6315T—HCPL0500
SFH6316T—HCPL0501
SFH6343T—HCPL0453
•
V
VDE 0884 Available with Option 1
D E
Package Dimensions in Inches (mm)
SFH6315/6
NC
1
A
2
8
V
CC
7
Base V
B
6
C
5
E
.120±.002
(3.05±.05)
.240
(6.10)
Pin 1
.192±.005
(4.88±.13)
.004 (.10)
.008 (.20)
K
3
NC
4
SFH6343
C .154±.002
L
(3.91±.05)
.016
(.41)
NC
1
A
2
K
3
NC
4
8
V
CC
7
NC
6
C
5
E
.015±.002
(.38±.05)
40°
7°
.058±.005
(1.49±.13)
.125±.005
(3.18±.13)
Lead
Coplanarity
±.0015
(.04)
max.
.008 (.20)
5° max.
.050 (1.27) typ.
.020±.004
.021 (.53)
(.51±.10)
2 plcs.
R.010
(.25) max.
APPLICATIONS
• Line Receivers
• Logic Ground Isolation
• Analog Signal Ground Isolation
• Replace Pulse Transformers
DESCRIPTION
The SFH6315T/16T/43T, high speed optocouplers, each
consists of a GaAlAs infrared emitting diode, optically
coupled with an integrated photodetector and a high
speed transistor. The photodetector is junction isolated
from the transistor to reduce miller capacitance effects.
The open collector output function allows circuit designers
to adjust the load conditions when interfacing with differ-
ent logic systems such as TTL, CMOS, etc.
Because the SFH6343T has a Faraday shield on the
detector chip, it can also reject and minimize high input to
output common mode transient voltages. There is no base
connection, further reducing the potential electrical noise
entering the package.
The SFH6315T/16T/43T are packaged in industry stan-
dard SOIC-8 packages and are suitable for surface
mounting.
TOLERANCE: ±.005 (unless otherwise noted)
Absolute Maximum Ratings
Emitter (GaAlAs)
Reverse Voltage......................................................................... 3.0 V
DC Forward Current.................................................................25 mA
Surge Forward Current (t
p
≤
1.0
µ
s, 300 pulses/s)......................1.0 A
Total Power Dissipation (
T
A
≤
70
°
C) ......................................... 45 mW
Detector (Si Photodiode + Transistor)
Supply Voltage................................................................ –0.5 to 30 V
Output Voltage.............................................................. –0.5V to 25 V
Output Current........................................................................8.0 mA
Total Power Dissipation (
T
A
≤
70
°
C) ....................................... 100 mW
Package
Isolation Test Voltage
between emitter and detector.......................................3000 V
RMS
(refer to climate DIN 40046, part 2, Nov. 74)
Pollution Degree (DIN VDE 0110).................................................... 2
Creepage.............................................................................
≥
4.0 mm
Clearance ............................................................................
≥
4.0 mm
Comparative Tracking Index
per DIN IEC 112/VDE 0303, part 1 .......................................... 175
Isolation Resistance
V
IO
=500 V,
T
A
=25
°
C, R
ISOL
(Note 2) .................................
≥
10
12
Ω
V
IO
=500 V,
T
A
=100
°
C, R
ISOL
(Note 2) ................................
≥
10
11
Ω
Storage Temperature Range .................................. –55
°
C to +150
°
C
Ambient Temperature Range.................................. –55
°
C to +100
°
C
Junction Temperature .............................................................. 100
°
C
Soldering Temperature (t=10 s max.)
Dip soldering: distance to seating plane
≥
1.5 mm .............. 260
°
C
2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
2–277
May 17, 2000-09
Switching Specifications
Over recommended temperature (T
A
=0°C to 70°C),
V
CC
=5.0 V,
I
F
=16 mA unless otherwise specified. *All typical values,
T
A
=25°C
Parameter
Propagation Delay Time
to Logic Low at Output
Symbol
t
PHL
Device
SFH6315T
Min.
—
Typ.*
0.5
Max.
1.5
2.0
SFH6316T
SFH6343T
Propagation Delay Time
to Logic High at Output
t
PLH
SFH6315T
—
0.25
0.8
1.0
—
0.5
1.5
2.0
SFH6316T
SFH6343T
Common Mode Transient
Immunity at Logic High
Level Output
|CM
H
|
SFH6315T
SFH6316T
SFH6343T
—
0.5
0.8
1.0
—
—
15
1.0
1.0
30
—
—
—
kV/µs
R
L
=4.1 kΩ
R
L
=1.9 kΩ
R
L
=1.9 kΩ
I
F
=0 mA
T
A
=25°C
V
CM
=10 V
P–P
I
F
=0 mA
T
A
=25°C
V
CM
=1500 V
P–P
I
F
=16 mA
T
A
=25°C
V
CM
=10 V
P–P
I
F
=16 mA
T
A
=25°C
V
CM
=1500 V
P–P
µs
T
A
=25°C
T
A
=25°C
µs
T
A
=25°C
Units
Test Conditions
T
A
=25°C
R
L
=4.1 kΩ
1
R
L
=1.9 kΩ
4, 5
Fig.
Note
R
L
=4.1 kΩ
1
R
L
=1.9 kΩ
4, 5
2
3, 4,
5
Common Mode Transient
Immunity at Logic Low Level
Output
|CM
L
|
SFH6315T
SFH6316T
SFH6343T
—
—
15
1.0
1.0
30
—
—
—
kV/µs
R
L
=4.1 kΩ
R
L
=1.9 kΩ
R
L
=1.9 kΩ
2
3, 4,
5
Notes
1. Current transfer ratio in percent equals the ratio of output collector current (I
O
) to the forward LED input current (I
F
) times 100.
2. Device considered a two-terminal device: pins 1, 2, 3, and 4 shorted together and pins 5, 6, 7, and 8 shorted together.
3. Common mode transient immunity in a Logic High level is the maximum tolerable (positive) dV
cm
/dt on the leading edge of the common mode
pulse (V
CM
) to assure that the output will remain in a Logic High state (i.e.,
V
O
>2.0 V). Common mode transient immunity in a Logic Low level is
the maximum tolerable (negative) dVcm/dt on the trailing edge of the common mode pulse signal (V
CM
to assure that the output will remain in a
Logic Low state, i.e.,
V
O
<0.8 V).
4. The 1.9 kΩ load represents 1 TTL unit load of 1.6 mA and the 5.6 kΩ pull-up resistor.
5. The 4.1 kΩ load represents 1 LSTTL unit load of 0.36 mA and the 6.1 kΩ pull-up resistor.
6. A 0.1
µf
bypass capacitor connected between pins 5 and 8 is recommended.
Figure 2. Test circuit for transient immunity and typical waveforms
V
CM
0 V 10%
90%
tr
90%
10%
tf
A
1
I
F
8
7
6
0.1
µF
R
L
+5 V
2
3
4
V
CC
+
V
CM
–
V
O
V
O
Switch at A: IF=0 mA
5V
B
5
V
O
Switch at B: IF=16 mA
V
OL
Pulse Generator
2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
2–279
SFH6315/6316/6343
May 17, 2000-09
嵌入式系统
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
