Si4539DY
Dual N- and P-Channel 30-V (D-S) Rated MOSFET
Product Summary
V
DS
(V)
N-Channel
N Channel
30
r
DS(on)
(W)
0.037 @ V
GS
= 10 V
0.055 @ V
GS
= 4.5 V
0.053 @ V
GS
= –10 V
0.095 @ V
GS
= –4.5 V
I
D
(A)
"5.8
"4.7
"4.9
"3.6
D
1
D
1
S
2
P-Channel
P Channel
–30
30
SO-8
S
1
G
1
S
2
G
2
1
2
3
4
Top View
S
1
N-Channel MOSFET
D
2
D
2
P-Channel MOSFET
8
7
6
5
D
1
D
1
D
2
D
2
G
1
G
2
Absolute Maximum Ratings (
T
A
= 25_C Unless Otherwise Noted
)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
T
A
= 25_C
T
A
= 70_C
T
A
= 25_C
T
A
= 70_C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
stg
N-Channel
30
"20
"5.8
"4.6
"30
1.7
2.0
1.3
P-Channel
–30
"20
"4.9
"3.9
"30
–1.7
2.0
1.3
Unit
V
A
W
–55 to 150
_C
Thermal Resistance Ratings
Parameter
Maximum Junction-to-Ambient
a
Notes
a. Surface Mounted on FR4 Board, t
v
10 sec.
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70152.
A SPICE Model data sheet is available for this product (FaxBack document #70555).
Symbol
R
thJA
N- or P-Channel
62.5
Unit
_C/W
Siliconix
S-49534—Rev. D, 06-Oct-97
1
Si4539DY
Specifications (T
J
= 25_C Unless Otherwise Noted)
Parameter
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250
mA
V
DS
= V
GS
, I
D
= –250
mA
V
DS
= 0 V V
GS
=
"20
V
V,
V
DS
= 30 V, V
GS
= 0 V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= –30 V, V
GS
= 0 V
V
DS
= 30 V, V
GS
= 0 V, T
J
= 55_C
V
DS
= –30 V, V
GS
= 0 V, T
J
= 55_C
On-State
On State Drain Current
b
I
D( )
D(on)
V
DS
w
5 V, V
GS
= 10 V
V
DS
v
–5 V, V
GS
= –10 V
V
GS
= 10 V, I
D
= 5.8 A
Drain-Source On State
Drain Source On-State Resistance
b
V
GS
= –10 V, I
D
= –4.9 A
r
DS( )
DS(on)
V
GS
= 4.5 V, I
D
= 4.7 A
V
GS
= –4.5 V, I
D
= –3.6 A
Forward Transconductance
b
g
f
fs
V
DS
= 15 V, I
D
= 5.8 A
V
DS
= –15 V, I
D
= –4.9 A
I
S
= 1.7 A, V
GS
= 0 V
I
S
= –1.7 A, V
GS
= 0 V
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
20
–20
0.030
0.043
0.042
0.070
13
10
0.8
–0.8
1.2
–1.2
V
S
0.037
0.053
0.055
0.095
W
A
1.0
–1.0
"100
"100
1
–1
25
–25
mA
nA
V
Symbol
Test Condition
Min
Typ
a
Max
Unit
Gate Body Leakage
Gate-Body
I
GSS
Diode Forward Voltage
b
V
SD
Dynamic
a
Total Gate Charge
Q
g
N-Ch
N-Channel
V,
5.8
V
DS
= 15 V V
GS
= 10 V, I
D
= 5 8 A
V
P Channel
P-Channel
V
DS
= –15 V, V
GS
= –10 V, I
D
= –4.9 A
P-Ch
N-Ch
P-Ch
N-Ch
Gate-Drain
Gate Drain Charge
Q
gd
d
P-Ch
N-Ch
Turn-On
Turn On Delay Time
t
d( )
d(on)
N-Channel
N Channel
V
DD
= 15 V, R
L
=15
W
I
D
^
1 A V
GEN
= 10 V, R
G
= 6
W
A,
V
P-Channel
V
DD
= –15 V, R
L
= 15
W
I
D
^
–1 A V
GEN
= –10 V, R
G
= 6
W
1 A,
10 V
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
Fall Time
t
f
I
F
= 1.7 A, di/dt = 100 A/ms
I
F
= –1.7 A, di/dt = 100 A/ms
P-Ch
N-Ch
P-Ch
18
16
4.5
5
2.5
2
10
9
20
13
27
25
24
15
45
60
16
15
16
20
40
40
35
25
80
90
ns
25
25
nC
Gate-Source
Gate Source Charge
Q
gs
Rise Time
t
r
Turn-Off
Turn Off Delay Time
t
d( ff)
d(off)
Source Drain Reverse Recovery Time
Source-Drain
t
rr
Notes
a. For design aid only; not subject to production testing.
b. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
2
Siliconix
S-49534—Rev. D, 06-Oct-97
Si4539DY
Typical Characteristics (25_C Unless Noted)
Output Characteristics
30
V
GS
= 10, 9, 8, 7, 6, 5 V
24
I
D
– Drain Current (A)
I
D
– Drain Current (A)
24
30
T
C
= –55_C
25_C
125_C
18
N-Channel
Transfer Characteristics
18
4V
12
12
6
2, 1 V
0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
3V
6
0
0
1
2
3
4
5
6
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.10
1250
Capacitance
C
iss
r
DS(on)
– On-Resistance (
W
)
0.08
C – Capacitance (pF)
1000
0.06
V
GS
= 4.5 V
0.04
V
GS
= 10 V
750
500
C
oss
0.02
250
C
rss
0
0
6
12
18
24
30
36
I
D
– Drain Current (A)
0
0
6
12
18
24
30
V
DS
– Drain-to-Source Voltage (V)
10
V
GS
– Gate-to-Source Voltage (V)
V
DS
= 15 V
I
D
= 5.8 A
Gate Charge
2.00
1.75
r
DS(on)
– On-Resistance (
W
)
(Normalized)
1.50
1.25
1.00
0.75
0.5
–50
On-Resistance vs. Junction Temperature
V
GS
= 10 V
I
D
= 5.8 A
8
6
4
2
0
0
4
8
12
16
20
–25
0
25
50
75
100
125
150
Q
g
– Total Gate Charge (nC)
T
J
– Junction Temperature (_C)
Siliconix
S-49534—Rev. D, 06-Oct-97
3
Si4539DY
Typical Characteristics (25_C Unless Noted)
20
N-Channel
On-Resistance vs. Gate-to-Source Voltage
Source-Drain Diode Forward Voltage
0.09
0.08
I
S
– Source Current (A)
10
r
DS(on)
– On-Resistance (
W
)
T
J
= 150_C
0.07
0.06
0.05
0.04
0.03
0.02
0.01
I
D
=
5.8
A
T
J
= 25_C
1
0.3
0.5
0.7
0.9
1.1
1.3
V
SD
– Source-to-Drain Voltage (V)
0
0
2
4
6
8
10
V
GS
– Gate-to-Source Voltage (V)
0.4
0.2
V
GS(th)
Variance (V)
–0.0
–0.2
–0.4
–0.6
–0.8
–50
Threshold Voltage
50
Single Pulse Power
40
I
D
= 250
mA
Power (W)
30
20
10
–25
0
25
50
75
100
125
150
0
0.01
0.10
1.00
Time (sec)
10.00
T
J
– Temperature (_C)
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.2
Notes:
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
–4
10
–3
10
–2
10
–1
1
P
DM
t
1
t
2
1. Duty Cycle, D =
t
1
t
2
2. Per Unit Base = R
thJA
= 62.5_C/W
3. T
JM
– T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
10
30
Square Wave Pulse Duration (sec)
4
Siliconix
S-49534—Rev. D, 06-Oct-97
Si4539DY
Typical Characteristics (25_C Unless Noted)
Output Characteristics
30
V
GS
= 10, 9, 8, 7, 6 V
24
I
D
– Drain Current (A)
5V
I
D
– Drain Current (A)
24
30
T
C
= –55_C
25_C
125_C
18
P-Channel
Transfer Characteristics
18
12
4V
12
6
2, 1 V
0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
3V
6
0
0
2
4
6
8
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.20
1500
Capacitance
r
DS(on)
– On-Resistance (
W
)
0.16
C – Capacitance (pF)
1200
C
iss
0.12
V
GS
= 4.5 V
900
0.08
V
GS
= 10 V
600
C
oss
0.04
300
C
rss
0
0
6
12
18
24
30
I
D
– Drain Current (A)
0
0
6
12
18
24
30
V
DS
– Drain-to-Source Voltage (V)
10
V
GS
– Gate-to-Source Voltage (V)
V
DS
= 15 V
I
D
= 4.9 A
Gate Charge
1.75
On-Resistance vs. Junction Temperature
V
GS
= 10 V
I
D
= 4.9 A
6
r
DS(on)
– On-Resistance (
W
)
(Normalized)
8
12
16
20
8
1.50
1.25
4
1.00
2
0.75
0
0
4
0.5
–50
–25
0
25
50
75
100
125
150
Q
g
– Total Gate Charge (nC)
T
J
– Junction Temperature (_C)
Siliconix
S-49534—Rev. D, 06-Oct-97
5
无线连接
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
