BFP405
NPN Silicon RF Transistor
•
For low current applications
•
For oscillators up to 12 GHz
•
Noise figure
F
= 1.25 dB at 1.8 GHz
outstanding
G
ms
= 23 dB at 1.8 GHz
•
SIEGET
25 GHz f
T
- Line
•
Pb-free (RoHS compliant) package
•
Qualified according AEC Q101
3
4
1
2
ESD
(Electrostatic
discharge)
sensitive device, observe handling precaution!
Type
BFP405
Maximum Ratings
Parameter
Marking
ALs
1=B
Pin Configuration
2=E
3=C
4=E
Symbol
V
CEO
4.5
4.1
V
CES
V
CBO
V
EBO
I
C
I
B
P
tot
T
j
T
A
T
stg
15
15
1.5
25
1
75
150
Package
-
SOT343
Value
Unit
V
-
Collector-emitter voltage
T
A
> 0 °C
T
A
≤
0 °C
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
1)
T
S
≤
108 °C
Junction temperature
Ambient temperature
Storage temperature
1
T
mA
mW
°C
-65 ... 150
-65 ... 150
S is measured on the collector lead at the soldering point to the pcb
2009-11-06
1
BFP405
Thermal Resistance
Parameter
Junction - soldering point
1)
Symbol
R
thJS
Value
≤
555
Unit
K/W
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Symbol
Values
Parameter
min.
DC Characteristics
Collector-emitter breakdown voltage
I
C
= 1 mA,
I
B
= 0
Collector-emitter cutoff current
V
CE
= 15 V,
V
BE
= 0
Collector-base cutoff current
V
CB
= 5 V,
I
E
= 0
Emitter-base cutoff current
V
EB
= 0.5 V,
I
C
= 0
DC current gain
I
C
= 5 mA,
V
CE
= 4 V, pulse measured
1
For
Unit
max.
-
10
100
1
130
V
µA
nA
µA
-
typ.
5
-
-
-
95
V
(BR)CEO
I
CES
I
CBO
I
EBO
h
FE
4.5
-
-
-
60
calculation of
R
thJA
please refer to Application Note Thermal Resistance
2009-11-06
2
BFP405
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Symbol
Values
Unit
Parameter
min.
typ. max.
AC Characteristics
(verified by random sampling)
Transition frequency
f
T
I
C
= 10 mA,
V
CE
= 3 V,
f
= 2 GHz
Collector-base capacitance
V
CB
= 2 V,
f
= 1 MHz,
V
BE
= 0 ,
emitter grounded
Collector emitter capacitance
V
CE
= 2 V,
f
= 1 MHz,
V
BE
= 0 ,
base grounded
Emitter-base capacitance
V
EB
= 0.5 V,
f
= 1 MHz,
V
CB
= 0 ,
collector grounded
Noise figure
I
C
= 2 mA,
V
CE
= 2 V,
f
= 1.8 GHz,
Z
S
=
Z
Sopt
Power gain, maximum stable
1)
I
C
= 5 mA,
V
CE
= 2 V,
Z
S
=
Z
Sopt
,
Z
L
=
Z
Lopt
,
f
= 1.8 GHz
Insertion power gain
V
CE
= 2 V,
I
C
= 5 mA,
f
= 1.8 GHz,
Z
S
=
Z
L
= 50
Ω
Third order intercept point at output
2)
V
CE
= 2 V,
I
C
= 5 mA,
f
= 1.8 GHz,
Z
S
=
Z
L
= 50
Ω
1dB Compression point at output
I
C
= 5 mA,
V
CE
= 2 V,
Z
S
=
Z
L
= 50
Ω
,
f
= 1.8 GHz
1
G
18
-
25
0.05
-
0.1
GHz
pF
C
cb
C
ce
-
0.24
-
C
eb
-
0.29
-
F
G
ms
-
-
1.25
23
-
-
dB
dB
|S
21
|
2
14
18.5
-
IP
3
-
15
-
dBm
P
-1dB
-
5
-
ms = |
S
21 /
S
12|
2
IP3 value depends on termination of all intermodulation frequency components.
Termination used for this measurement is 50
Ω
from 0.1 MHz to 6 GHz
2009-11-06
3
BFP405
Simulation Data
For SPICE-model as well as for S-parameters including noise parameters refer
to our internet website:
www.infineon.com/rf.models.
Please consult our website
and download the latest version before actually starting your design.
The simulation data have been generated and verified up to 12GHz using typical
devices. The BFP405 nonlinear SPICE-model reflects the typical DC- and RF-device
performance with high accuracy.
2009-11-06
4
BFP405
Total power dissipation
P
tot
=
ƒ
(T
S
)
Permissible Pulse Load
R
thJS
=
ƒ
(t
p
)
100
mW
10
3
80
P
tot
60
50
40
30
20
10
0
0
120
°C
R
thJS
K/W
70
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D=0
20
40
60
80
100
150
10
2 -7
10
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
T
s
t
p
Permissible Pulse Load
P
totmax
/P
totDC
=
ƒ
(t
p
)
10
1
Collector-base capacitance
C
cb
=
ƒ
(V
CB
)
f
= 1MHz
0.3
P
totmax
/P
totDC
pF
-
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
C
CB
-2
0.2
0.15
0.1
0.05
10
0 -7
10
10
-6
10
-5
10
-4
10
-3
10
s
10
0
0
0
0.5
1
1.5
2
2.5
3
V
4
t
p
V
CB
2009-11-06
5
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