Non-Volatile SRAM, 8KX8, 45ns, CMOS, CDIP28, 0.300 INCH, CERAMIC, DIP-28
参数名称 | 属性值 |
厂商名称 | Simtek |
包装说明 | DIP, |
Reach Compliance Code | unknown |
ECCN代码 | 3A001.A.2.C |
Is Samacsys | N |
最长访问时间 | 45 ns |
其他特性 | RETENTION/ENDURANCE-10 YEARS/100000 CYCLES; HARDWARE STORE/RECALL |
JESD-30 代码 | R-CDIP-T28 |
长度 | 35.56 mm |
内存密度 | 65536 bit |
内存集成电路类型 | NON-VOLATILE SRAM |
内存宽度 | 8 |
功能数量 | 1 |
端口数量 | 1 |
端子数量 | 28 |
字数 | 8192 words |
字数代码 | 8000 |
工作模式 | ASYNCHRONOUS |
最高工作温度 | 125 °C |
最低工作温度 | -55 °C |
组织 | 8KX8 |
输出特性 | 3-STATE |
可输出 | YES |
封装主体材料 | CERAMIC, METAL-SEALED COFIRED |
封装代码 | DIP |
封装形状 | RECTANGULAR |
封装形式 | IN-LINE |
并行/串行 | PARALLEL |
认证状态 | Not Qualified |
筛选级别 | MIL-STD-883 |
座面最大高度 | 4.14 mm |
最大供电电压 (Vsup) | 5.5 V |
最小供电电压 (Vsup) | 4.5 V |
标称供电电压 (Vsup) | 5 V |
表面贴装 | NO |
技术 | CMOS |
温度等级 | MILITARY |
端子形式 | THROUGH-HOLE |
端子节距 | 2.54 mm |
端子位置 | DUAL |
宽度 | 7.62 mm |
Base Number Matches | 1 |
5962-9305605MXX | 5962-9305605MYX | 5962-9305606MXX | 5962-9305606MYX | 5962-9305604MYX | |
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描述 | Non-Volatile SRAM, 8KX8, 45ns, CMOS, CDIP28, 0.300 INCH, CERAMIC, DIP-28 | Non-Volatile SRAM, 8KX8, 45ns, CMOS, CQCC28, CERAMIC, LCC-28 | Non-Volatile SRAM, 8KX8, 35ns, CMOS, CDIP28, 0.300 INCH, CERAMIC, DIP-28 | Non-Volatile SRAM, 8KX8, 35ns, CMOS, CQCC28, CERAMIC, LCC-28 | Non-Volatile SRAM, 8KX8, 55ns, CMOS, CQCC28, CERAMIC, LCC-28 |
包装说明 | DIP, | QCCN, | DIP, | QCCN, | QCCN, |
Reach Compliance Code | unknown | unknown | unknown | unknown | unknown |
ECCN代码 | 3A001.A.2.C | 3A001.A.2.C | 3A001.A.2.C | 3A001.A.2.C | 3A001.A.2.C |
最长访问时间 | 45 ns | 45 ns | 35 ns | 35 ns | 55 ns |
其他特性 | RETENTION/ENDURANCE-10 YEARS/100000 CYCLES; HARDWARE STORE/RECALL | RETENTION/ENDURANCE-10 YEARS/100000 CYCLES; HARDWARE STORE/RECALL | RETENTION/ENDURANCE-10 YEARS/100000 CYCLES; HARDWARE STORE/RECALL | RETENTION/ENDURANCE-10 YEARS/100000 CYCLES; HARDWARE STORE/RECALL | RETENTION/ENDURANCE-10 YEARS/100000 CYCLES; HARDWARE STORE/RECALL |
JESD-30 代码 | R-CDIP-T28 | R-CQCC-N28 | R-CDIP-T28 | R-CQCC-N28 | R-CQCC-N28 |
长度 | 35.56 mm | 13.97 mm | 35.56 mm | 13.97 mm | 13.97 mm |
内存密度 | 65536 bit | 65536 bit | 65536 bit | 65536 bit | 65536 bit |
内存集成电路类型 | NON-VOLATILE SRAM | NON-VOLATILE SRAM | NON-VOLATILE SRAM | NON-VOLATILE SRAM | NON-VOLATILE SRAM |
内存宽度 | 8 | 8 | 8 | 8 | 8 |
功能数量 | 1 | 1 | 1 | 1 | 1 |
端口数量 | 1 | 1 | 1 | 1 | 1 |
端子数量 | 28 | 28 | 28 | 28 | 28 |
字数 | 8192 words | 8192 words | 8192 words | 8192 words | 8192 words |
字数代码 | 8000 | 8000 | 8000 | 8000 | 8000 |
工作模式 | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
最高工作温度 | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C |
最低工作温度 | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C |
组织 | 8KX8 | 8KX8 | 8KX8 | 8KX8 | 8KX8 |
输出特性 | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
可输出 | YES | YES | YES | YES | YES |
封装主体材料 | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED |
封装代码 | DIP | QCCN | DIP | QCCN | QCCN |
封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
封装形式 | IN-LINE | CHIP CARRIER | IN-LINE | CHIP CARRIER | CHIP CARRIER |
并行/串行 | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL |
认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
筛选级别 | MIL-STD-883 | MIL-STD-883 | MIL-STD-883 | MIL-STD-883 | MIL-STD-883 |
座面最大高度 | 4.14 mm | 2.29 mm | 4.14 mm | 2.29 mm | 2.29 mm |
最大供电电压 (Vsup) | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V |
最小供电电压 (Vsup) | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V |
标称供电电压 (Vsup) | 5 V | 5 V | 5 V | 5 V | 5 V |
表面贴装 | NO | YES | NO | YES | YES |
技术 | CMOS | CMOS | CMOS | CMOS | CMOS |
温度等级 | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY |
端子形式 | THROUGH-HOLE | NO LEAD | THROUGH-HOLE | NO LEAD | NO LEAD |
端子节距 | 2.54 mm | 1.27 mm | 2.54 mm | 1.27 mm | 1.27 mm |
端子位置 | DUAL | QUAD | DUAL | QUAD | QUAD |
宽度 | 7.62 mm | 8.89 mm | 7.62 mm | 8.89 mm | 8.89 mm |
Base Number Matches | 1 | 1 | 1 | 1 | 1 |
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