based on 16Mx8 SDRAM with LVTTL, 4 banks & 4K Refresh
HYM71V16M635HC(L)T8 Series
DESCRIPTION
The Hynix HYM71V16M635HC(L)T8 Series are 16Mx64bits Synchronous DRAM Modules. The modules are composed of eight
16Mx8bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 144pin
glass-epoxy printed circuit board. One 0.22uF and one 0.0022uF decoupling capacitors per each SDRAM are mounted on the PCB.
The Hynix HYM71V16M635HC(L)T8 Series are Dual In-line Memory Modules suitable for easy interchange and addition of
128Mbytes memory. The Hynix HYM71V16M635HC(L)T8 Series are fully synchronous operation referenced to the positive edge of
the clock . All inputs and outputs are synchronized with the rising edge of the clock input. The data paths are internally pipelined to
achieve very high bandwidth.
FEATURES
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PC133/PC100MHz support
144pin SDRAM SO DIMM
Serial Presence Detect with EEPROM
1.155” (29.34mm) Height PCB with single sided
components
Single 3.3±0.3V power supply
- 1, 2, 4 or 8 or Full page for Sequential Burst
•
•
All device pins are compatible with LVTTL interface
- 1, 2, 4 or 8 for Interleave Burst
Data mask function by DQM
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Programmable CAS Latency ; 2, 3 Clocks
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SDRAM internal banks : four banks
Module bank : one physical bank
Auto refresh and self refresh
4096 refresh cycles / 64ms
Programmable Burst Length and Burst Type
ORDERING INFORMATION
Part No.
HYM71V16M635HCT8-K
HYM71V16M635HCT8-H
HYM71V16M635HCLT8-K
HYM71V16M635HCLT8-H
133MHz
4 Banks
4K
Low Power
Clock
Frequency
Internal
Bank
Ref.
Power
Normal
SDRAM
Package
Plating
TSOP-II
Gold
This document is a general product description and is subject to change without notice. Hynix Semiconductor Inc. does not assume any responsibility for
use of circuits described. No patent licenses are implied.
Rev. 0.3/Dec. 01
2
PC133 SDRAM SO DIMM
HYM71V16M635HC(L)T8 Series
PIN DESCRIPTION
PIN
CK0, CK1
CKE0
/S0
BA0, BA1
A0 ~ A11
/RAS, /CAS, /WE
DQM0~DQM7
DQ0 ~ DQ63
VCC
V
SS
SCL
SDA
SA0~2
NC
PIN NAME
Clock Inputs
Clock Enable
Chip Select
SDRAM Bank Address
Address
Row Address Strobe, Column
Address Strobe, Write Enable
Data Input/Output Mask
Data Input/Output
Power Supply (3.3V)
Ground
SPD Clock Input
SPD Data Input/Output
SPD Address Input
No Connection
DESCRIPTION
The system clock input. All other inputs are registered to the SDRAM on the
rising edge of CLK
Controls internal clock signal and when deactivated, the SDRAM will be one
of the states among power down, suspend or self refresh
Enables or disables all inputs except CK, CKE and DQM
Selects bank to be activated during /RAS activity
Selects bank to be read/written during /CAS activity
据外媒报道，萨里大学（University of Surrey）的研究人员开发出一种无需依赖GPS即可在人口密集的城市地区精确定位设备位置的人工智能系统。该系统可将定位误差从734米缩小到22米以内，这对于自动驾驶汽车和救援车辆等技术的发展意义重大。 图片来源： 萨里大学 在发表于《IEEE Robotics and Automation Letters》的论文中，研究人员介绍了PEn...[详细]
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