UNISONIC TECHNOLOGIES CO., LTD
PZT5551
HIGH VOLTAGE SWITCHING
TRANSISTOR
FEATURES
* High Collector-Emitter Voltage:
V
CEO
=160V
*High current gain
NPN SILICON TRANSISTOR
*Pb-free plating product number:PZT5551L
ORDERING INFORMATION
Order Number
Normal
Lead Free Plating
PZT5551-x-AA3-F-R
PZT5551L-x-AA3-F-R
Package
SOT-223
Pin Assignment
1
2
3
B
C
E
Packing
Tape Reel
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QW-R207-007,D
PZT5551
ABSOLUATE MAXIUM RATINGS
(Ta = 25℃)
PARAMETER
NPN SILICON TRANSISTOR
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
V
CBO
180
V
Collector-Emitter Voltage
V
CEO
160
V
Emitter-Base Voltage
V
EBO
6
V
DC Collector Current
I
C
600
mA
Power Dissipation
P
C
2
W
℃
Operating Junction Temperature
T
J
+150
℃
Storage Temperature
T
STG
-65 ~ +150
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
Thermal Resistance
SYMBOL
θ
JA
RATINGS
62.5
UNIT
℃/W
ELECTRICAL CHARACTERISTICS
(Ta= 25
℃
, unless otherwise specified)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain(note)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
Noise Figure
SYMBOL
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE(SAT)
V
BE(SAT)
f
T
C
ob
NF
TEST CONDITIONS
I
C
=100μA, I
E
=0
I
C
=1mA, I
B
=0
I
E
=10μA, I
C
=0
V
CB
=120V, I
E
=0
V
BE
=4V, Ic=0
V
CE
=5V, Ic=1mA
V
CE
=5V, Ic=10mA
V
CE
=5V, Ic=50mA
I
C
=10mA, I
B
=1mA
I
C
=50mA, I
B
=5mA
I
C
=10mA, I
B
=1mA
I
C
=50mA, I
B
=5mA
V
CE
=10V, Ic=10mA, f=100MHz
V
CB
=10V, I
E
=0, f=1MHz
I
C
=0.25mA, V
CE
=5V
R
S
=1kΩ, f=10Hz ~ 15.7kHz
MIN
180
160
6
TYP
MAX
UNIT
V
V
V
nA
nA
50
50
80
80
80
160
400
0.15
0.2
1
1
300
6.0
8
V
V
MHz
pF
dB
100
Note: Pulse test: PW<300μs, Duty Cycle<2%
CLASSIFICATION OF h
FE
RANK
RANGE
A
80-170
B
150-240
C
200-400
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R207-007,D
PZT5551
Current Gain-Bandwidth Product, f
T
(MHz)
Collector Current, Ic (mA)
Capacitance, Cob (pF)
■
TYPICAL CHARACTERICS
UNISONIC TECHNOLOGIES CO., LTD
Saturation Voltage (V)
DC Current Gain, h
FE
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NPN SILICON TRANSISTOR
QW-R207-007,D
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PZT5551
NPN SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R207-007,D
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