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PZT5551-TP

产品描述Small Signal Bipolar Transistor,
产品类别分立半导体    晶体管   
文件大小397KB,共2页
制造商Micro Commercial Components (MCC)
标准
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PZT5551-TP概述

Small Signal Bipolar Transistor,

PZT5551-TP规格参数

参数名称属性值
是否Rohs认证符合
厂商名称Micro Commercial Components (MCC)
Reach Compliance Codecompliant
Is SamacsysN
湿度敏感等级1
峰值回流温度(摄氏度)260
处于峰值回流温度下的最长时间10
Base Number Matches1

文档预览

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MCC
Micro Commercial Components
TM
  omponents
20736 Marilla
Street Chatsworth

  !"#
$ %    !"#
PZT5551
Features
Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
High Voltage Amplifier Application
Epoxy meets UL 94 V-0 flammability rating
Moisure Sensitivity Level 1
Halogen
free available upon request by adding suffix "-HF"
Marking: ZT5551
x
x
x
NPN
Plastic-Encapsulate
Transistors

Unit
V
V
V
A
W
O
C
O
C
Maximum Ratings
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
C
T
J
T
STG
Symbol
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current DC
Collector Power Dissipation
Junction Temperature
Storage Temperature
Parameter
Collector-Base Voltage
(I
C
=100uAdc, I
E
=0)
Collector-Emitter Voltage
(I
C
=1mAdc, I
B
=0)
Emitter-Base Voltage
(I
E
=10uAdc, I
C
=0)
Collector Cutoff Current
(V
CB
=120Vdc, I
E
=0)
Emitter Cutoff Current
(V
EB
=4.0Vdc, I
C
=0)
DC Current Gain
(V
CE
=5.0Vdc, I
C
=1mAdc)
Min
Value
160
180
6.0
0.6
1.0
150
-55 to +150
Typ
Max
Electrical Characteristics @ 25qC Unless Otherwise Specified
Units
OFF CHARACTERISTICS
V
CBO
V
CEO
V
EBO
I
CBO
I
EBO
h
FE(1)
180
160
6.0
---
---
---
---
---
---
---
---
---
---
50
50
Vdc
Vdc
Vdc
nAdc
nAdc
80
---
---
---








































DIM
A
B
C
D
E
F
G
H
J
1

















2





SOT-223
3
1.
BASE
2. COLLECTOR
3.
EMITTER
h
FE(2)
h
FE(3)
V
CE(sat)
V
CE(sat)
V
BE(sat)
V
BE(sat)
f
T
C
ob
DC Current Gain
(V
CE
=5.0Vdc, I
C
=10mAdc)
DC Current Gain
(V
CE
=5.0Vdc, I
C
=50mAdc)
Collector-Emitter Saturation Voltage
(I
C
=10mAdc,I
B
=1mAdc)
Collector-Emitter Saturation Voltage
(I
C
=50mAdc,I
B
=5mAdc)
Base-Emitter Voltage
(I
C
=10mAdc,I
B
=1mAdc)
Base-Emitter Voltage
(I
C
=50mAdc,I
B
=5mAdc)
Transition Frequency
(V
CE
=10Vdc, I
C
=10mAdc,
f=100MHz)
Collector output capacitance
---
(V
CB
=10Vdc, I
E
=0, f=1MHz)
80
30
---
---
---
---
100
---
---
---
---
---
---
---
---
---
250
---
0.15
0.2
1
1
300
6
---
---
Vdc
Vdc
Vdc
Vdc
MHz
pF
DIMENSIONS
INCHES
MM
MIN
MAX
MIN
MAX
.248
.264
6.30
6.70
.130
.264
.001
.114
.091
---
.009
.030
.071
.014
---
---
0.23
0.75
.146
.287
.004
.122
3.30
6.70
0.02
2.90
2.30
1.80
0.35
---
3.70
7.30
0.10
3.10
NOTE
www.mccsemi.com
Revision:
A
1 of
2
2014/11/06

PZT5551-TP相似产品对比

PZT5551-TP PZT5551-TP-HF
描述 Small Signal Bipolar Transistor, Small Signal Bipolar Transistor,
是否Rohs认证 符合 符合
厂商名称 Micro Commercial Components (MCC) Micro Commercial Components (MCC)
Reach Compliance Code compliant compliant
Is Samacsys N N
湿度敏感等级 1 1
峰值回流温度(摄氏度) 260 260
处于峰值回流温度下的最长时间 10 10
Base Number Matches 1 1

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