HCS165MS
September 1995
Radiation Hardened Inverting
8-Bit Parallel-Input/Serial Output Shift Register
Pinouts
16 LEAD CERAMIC DUAL-IN-LINE
METAL SEAL PACKAGE (SBDIP)
MIL-STD-1835 CDIP2-T16, LEAD FINISH C
TOP VIEW
PL
CP
D4
D5
D6
1
2
3
4
5
6
7
8
16 VCC
15 CE
14 D3
13 D2
12 D1
11 D0
10 DS
9 Q7
Features
• 3 Micron Radiation Hardened SOS CMOS
• Total Dose 200K RAD (Si)
• SEP Effective LET No Upsets: >100 MEV-cm
2
/mg
• Single Event Upset (SEU) Immunity < 2 x 10
-9
Errors/
Bit-Day (Typ)
• Dose Rate Survivability: >1 x 10
12
RAD (Si)/s
• Dose Rate Upset >10
10
RAD (Si)/s 20ns Pulse
• Latch-Up Free Under Any Conditions
• Fanout (Over Temperature Range)
- Standard Outputs - 10 LSTTL Loads
• Military Temperature Range: -55 C to +125 C
• Significant Power Reduction Compared to LSTTL ICs
• DC Operating Voltage Range: 4.5V to 5.5V
• Input Logic Levels
- VIL = 0.3 VCC Max
- VIH = 0.7 VCC Min
• Input Current Levels Ii
≤
5µA at VOL, VOH
o
o
D7
Q7
GND
16 LEAD CERAMIC METAL SEAL
FLATPACK PACKAGE (FLATPACK)
MIL-STD-1835 CDFP4-F16, LEAD FINISH C
TOP VIEW
PL
CP
D4
D5
D6
D7
Q7
GND
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
VCC
CE
D3
D2
D1
D0
DS
Q7
Description
The Intersil HCS165MS is a Radiation Hardened 8-Bit Paral-
lel-In/Serial-Out Shift Register with complementary serial
outputs and an asynchronous parallel load input.
The HCS165MS utilizes advanced CMOS/SOS technology
to achieve high-speed operation. This device is a member of
radiation hardened, high-speed, CMOS/SOS Logic Family.
The HCS165MS is supplied in a 16 lead Ceramic flatpack
(K suffix) or a SBDIP Package (D suffix).
Ordering Information
PART NUMBER
HCS165DMSR
HCS165KMSR
HCS165D/Sample
HCS165K/Sample
HCS165HMSR
TEMPERATURE RANGE
-55
o
C to +125
o
C
-55
o
C to +125
o
C
+25
o
C
+25
o
C
+25
o
C
SCREENING LEVEL
Intersil Class S Equivalent
Intersil Class S Equivalent
Sample
Sample
Die
PACKAGE
16 Lead SBDIP
16 Lead Ceramic Flatpack
16 Lead SBDIP
16 Lead Ceramic Flatpack
Die
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
Spec Number
File Number
240
518757
2481.2
HCS165MS
Functional Diagram
D0
D1
D2
D3
D4
D5
D6
D7
CP
CE
CL
DP PL
DS
FF
DS Q
CL
DP PL
FF
DS Q
CL
DP PL
FF
DS Q
CL
DP PL
FF
DS Q
CL
DP PL
FF
DS Q
CL
DP PL
FF
DS Q
CL
DP PL
FF
DS Q
CL
DP PL
FF
DS Q
PL
D7
D7
TRUTH TABLE
INPUTS
OPERATING
MODES
Parallel Load
PL
L
L
Serial Shift
H
H
Hold “Do Nothing”
H
CE
X
X
L
L
H
X
CP
X
X
DS
X
X
l
h
X
D0 - D7
L
H
X
X
X
Qn REGISTER
Q0
L
H
L
H
Q0
Q1 - Q6
L-L
H-H
Q0 - Q5
Q0 - Q5
Q1 - Q6
OUTPUTS
Q7
L
H
Q6
Q6
Q7
Q7
H
L
Q6
Q6
Q7
H = HIGH voltage level
h = HIGH voltage level one setup time prior to the LOW-to-HIGH clock transition
L = LOW voltage level
l = LOW voltage level one setup time prior to the LOW-to-High clock transition
Qn = Lower case letters indicate the state of the referenced output one set-up time prior to the LOW-to-HIGH clock transition.
X = Don’t Care
= LOW-to-HIGH clock transition.
Spec Number
241
518757
Specifications HCS165MS
Absolute Maximum Ratings
Supply Voltage (VCC). . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to +7.0V
Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VCC +0.5V
DC Input Current, Any One Input
. . . . . . . . . . . . . . . . . . . . . . . .±10mA
DC Drain Current, Any One Output.
. . . . . . . . . . . . . . . . . . . . . .±25mA
(All Voltage Reference to the VSS Terminal)
Storage Temperature Range (TSTG) . . . . . . . . . . . -65
o
C to +150
o
C
Lead Temperature (Soldering 10sec) . . . . . . . . . . . . . . . . . . +265
o
C
Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175
o
C
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1
Reliability Information
Thermal Resistance
θ
JA
θ
JC
o
C/W
SBDIP Package. . . . . . . . . . . . . . . . . . . .
73
24
o
C/W
Ceramic Flatpack Package . . . . . . . . . . . 114
o
C/W
29
o
C/W
o
C Ambient
Maximum Package Power Dissipation at +125
SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.68W
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . . . . 0.44W
If device power exceeds package dissipation capability, provide heat
sinking or derate linearly at the following rate:
SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13.7mW/
o
C
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . 8.8mW/
o
C
CAUTION: As with all semiconductors, stress listed under “Absolute Maximum Ratings” may be applied to devices (one at a time) without resulting in permanent
damage. This is a stress rating only. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. The conditions listed
under “Electrical Performance Characteristics” are the only conditions recommended for satisfactory device operation..
Operating Conditions
Supply Voltage (VCC). . . . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V
Input Rise and Fall Times at VCC = 4.5V (TR, TF) . . . . .500ns Max
Operating Temperature Range (T
A
) . . . . . . . . . . . . -55
o
C to +125
o
C
Input Low Voltage (VIL). . . . . . . . . . . . . . . . . . . 0.0V to 30% of VCC
Input High Voltage (VIH) . . . . . . . . . . . . . . . . . . 70% of VCC to VCC
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
GROUP
A SUB-
GROUPS
1
2, 3
Output Current
(Sink)
IOL
VCC = 4.5V, VIH = 4.5V,
VOUT = 0.4V, VIL = 0V
1
2, 3
Output Current
(Source)
IOH
VCC = 4.5V, VIH = 4.5V,
VOUT = VCC -0.4V,
VIL = 0V
VCC = 4.5V, VIH = 3.15V,
IOL = 50µA, VIL = 1.35V
VCC = 5.5V, VIH = 3.85V,
IOL = 50µA, VIL = 1.65V
Output Voltage High
VOH
VCC = 4.5V, VIH = 3.15V,
IOH = -50µA, VIL = 1.35V
VCC = 5.5V, VIH = 3.85V,
IOH = -50µA, VIL = 1.65V
Input Leakage
Current
IIN
VCC = 5.5V, VIN = VCC or
GND
1
2, 3
1, 2, 3
LIMITS
TEMPERATURE
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C, +125
o
C, -55
o
C
MIN
-
-
4.8
4.0
-4.8
-4.0
-
MAX
40
750
-
-
-
-
0.1
UNITS
µA
µA
mA
mA
mA
mA
V
PARAMETER
Quiescent Current
SYMBOL
ICC
(NOTE 1)
CONDITIONS
VCC = 5.5V,
VIN = VCC or GND
Output Voltage Low
VOL
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
-
0.1
V
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
VCC
-0.1
VCC
-0.1
-
-
-
-
V
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
-
V
1
2, 3
+25
o
C
+125
o
C, -55
o
C
+25
o
C, +125
o
C, -55
o
C
±0.5
±5.0
-
µA
µA
-
Noise Immunity
Functional Test
FN
VCC = 4.5V,
VIH = 0.70(VCC),
VIL = 0.30(VCC) (Note 2)
7, 8A, 8B
NOTES:
1. All voltages reference to device GND.
2. For functional tests VO
≥
4.0V is recognized as a logic “1”, and VO
≤
0.5V is recognized as a logic “0”.
Spec Number
242
518757
Specifications HCS165MS
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
GROUP
A SUB-
GROUPS
9
10, 11
PEN to Q7 or Q7
TPLH
TPHL
VCC = 4.5V
9
10, 11
D7 to Q7
TPLH
TPHL
VCC = 4.5V
9
10, 11
D7 to Q7
TPLH
TPHL
VCC = 4.5V
9
10, 11
NOTES:
1. All voltages referenced to device GND.
2. AC measurements assume RL = 500Ω, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = VCC.
LIMITS
TEMPERATURE
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
MIN
2
2
2
2
2
2
2
2
MAX
35
41
40
46
27
31
29
35
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
PARAMETER
CP or CE to Q7 or
Q7
SYMBOL
TPLH
TPHL
(NOTES 1, 2)
CONDITIONS
VCC = 4.5V
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
(NOTE 1)
CONDITIONS
VCC = 5.0V, VIH = 5.0V, VIL = 0.0V,
f = 1MHz
VCC = 5.0V, VIH = 5.0V, VIL = 0.0V,
f = 1MHz
VCC = 5.0V, VIH = 5.0V, VIL = 0.0V,
f = 1MHz
VCC = 4.5V, VIH = 4.5V, VIL = 0.0V
LIMITS
TEMPERATURE
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
TSU
VCC = 4.5V, VIH = 4.5V, VIL = 0.0V
+25
o
C
+125
o
C, -55
o
C
TH
VCC = 4.5V, VIH = 4.5V, VIL = 0.0V
+25
o
C
+125
o
C, -55
o
C
TH
VCC = 4.5V, VIH = 4.5V, VIL = 0.0V
+25
o
C
+125
o
C, -55
o
C
TREC
VCC = 4.5V, VIH = 4.5V, VIL = 0.0V
+25
o
C
+125
o
C, -55
o
C
FMAX
VCC = 4.5V, VIH = 4.5V, VIL = 0.0V
+25
o
C
+125
o
C, -55
o
C
TTHL
TTLH
VCC = 4.5V, VIH = 4.5V, VIL = 0.0V
+25
o
C
+125
o
C, -55
o
C
MIN
-
-
-
-
-
-
16
24
16
24
7
11
0
0
20
30
30
20
1
1
MAX
41
56
10
10
20
20
-
-
-
-
-
-
-
-
-
-
-
-
15
22
UNITS
pF
pF
pF
pF
pF
pF
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
MHz
MHz
ns
ns
PARAMETER
Capacitance Power
Dissipation
Input Capacitance
SYMBOL
CPD
CIN
Output Capacitance
COUT
Pulse Width Time CP,
PL
Setup Time
DS to CP, CE to CP,
Dn to PL
Hold Time
DS to CP, CE
Hold Time
CE to CP
Recovery Time
PL to CP
Maximum
Frequency
Output Transition Time
TW
NOTE:
1. The parameters listed in Table 3 are controlled via design or process parameters. Min and Max Limits are guaranteed but not directly
tested. These parameters are characterized upon initial design release and upon design changes which affect these characteristics.
Spec Number
243
518757
Specifications HCS165MS
TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS
200K RAD
LIMITS
PARAMETER
Quiescent Current
Output Current (Sink)
SYMBOL
ICC
IOL
(NOTES 1, 2)
CONDITIONS
VCC = 5.5V, VIN = VCC or GND
VCC = 4.5V, VIN = VCC or GND,
VOUT = 0.4V
VCC = 4.5V, VIN = VCC or GND,
VOUT = VCC -0.4V
VCC = 4.5V or 5.5V, VIH = 0.70(VCC),
VIL = 0.30(VCC), IOL = 50µA
VCC = 4.5V or 5.5V, VIH = 0.70(VCC),
VIL = 0.30(VCC), IOH = -50µA
VCC = 5.5V, VIN = VCC or GND
VCC = 4.5V, VIH = 0.70(VCC),
VIL = 0.30(VCC), (Note 3)
VCC = 4.5V
TEMPERATURE
+25
o
C
+25
o
C
MIN
-
4.0
MAX
0.75
-
UNITS
mA
mA
Output Current
(Source)
Output Voltage Low
IOH
+25
o
C
-4.0
-
mA
VOL
+25
o
C
-
0.1
V
Output Voltage High
VOH
+25
o
C
VCC
-0.1
-
-
-
V
Input Leakage Current
Noise Immunity
Functional Test
CP or CEN to Q7 or
Q7N
PEN to Q7 or Q7N
IIN
FN
+25
o
C
+25
o
C
±5
-
µA
-
TPLH
TPHL
TPLH
TPHL
TPLH
TPHL
TPLH
TPHL
+25
o
C
2
41
ns
VCC = 4.5V
+25
o
C
2
46
ns
D7 to Q7
VCC = 4.5V
+25
o
C
2
31
ns
D7 to Q7N
VCC = 4.5V
+25
o
C
2
35
ns
NOTES:
1. All voltages referenced to device GND.
2. AC measurements assume RL = 500Ω, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = VCC.
3. For functional tests VO
≥
4.0V is recognized as a logic “1”, and VO
≤
0.5V is recognized as a logic “0”.
TABLE 5. BURN-IN AND OPERATING LIFE TEST, DELTA PARAMETERS (+25
o
C)
GROUP B
SUBGROUP
5
5
PARAMETER
ICC
IOL/IOH
DELTA LIMIT
12µA
-15% of 0 Hour
Spec Number
244
518757
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