Vol.02-06-e / June2002
MR2000 Series
Standby Compatible Partial Resonance Power Supply IC Module
with High-speed IGBT
Shigeru Hisada - Electronic Device Div.Group Advanced Power Products Div. Device Design Dept.
(Joined the company in 1991)
1
Introduction
Development of the MR2000 Series
Energy conservation guidelines from the Ministry of Economy, Trade and Industry require a
reduction in the standby power consumption of various types of electrical products as a means of
reducing environmental CO
2
levels. There are strong demands for reduced power consumption in
common devices such as TVs and set top boxes (STB) which remain on standby for long periods of
time, and efficient operation under micro-loads is required. Furthermore, demands for integration of
the various protective functions, higher functionality, and lower price are increasing to the extent
that it is now difficult to satisfy such demands with existing products.
In response, a Multi Chip Module (MCM) structure, incorporating only a main switch and control
IC, has been adopted in the development of the MR2000 Series of highly functional and low-cost IC
modules.
2
Outline
The MR2000 Series includes the 100V input and 200V/worldwide input IC modules, with a function
for burst mode switching under micro-load. The 100V input MR2500 Series employs a 500V
resistant MOSFET, while the 200V/worldwide input MR2900 Series employs a newly developed
900V resistant high-speed IGBT and a switching device optimized for the various input ranges.
Both devices are partial resonance power supply IC modules comprising a low power consumption
control IC as the control circuit.
MR2000 Series modules are contained in a fully molded MA Series package as used for previous
power supply hybrid ICs with an added screw hole.
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2
3
4
5
6
7
8
9
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Primary Features
Current consumption is reduced with use of the burst mode, promoting standby compatibility
with a single converter.
The optimized switching device provides ideal partial resonance operation for high efficiency
and low noise.
The 900V resistant switching device (high-speed IGBT) simplifies design of power supplies
for worldwide input.
Power consumption under micro-load is extremely low (burst mode).
Use of a drain kick circuit eliminates the need for a start-up resistor.
The use of a soft drive circuit reduces noise.
Incorporates an over-current protection function (primary current detect, Ton limit).
Incorporates over-voltage protection and thermal shutdown functions.
A power supply circuit may be configured with the minimum of external components.
The use of the fully molded package is beneficial for insulation design.
2-2
Product Lineup
O u t p u t c a p a c i t y P o [ W ] (r e f e r e n c e v a l u e s )
Mod el
Ma in sw itch
Peak
i npu t
voltage
Peak
inp ut
curr ent
I npu t
voltage
rang e
AC 90 ~1 3 2V
MR 2520
MR 2540
MR 2920
MR 2940
H igh- spe ed
IGBT
MOSFET
8
50 0
13
7
900
10
100
15 0
-
-
In p ut
voltage
r a n ge
A C 90 ~ 27 6 V
-
-
100
150
In put
voltage
r a nge
A C1 8 0~ 2 7 6V
-
-
150
225
Table 1 MR2000 Series Product Lineup
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Equivalent Circuit and Appearance
7
Drain/Collector
Z/C
Q1
IC1
F/B
GND
Vcc
Vin
1
2
3
4
5
6 Source/Emitter
Fig.1 Equivalent Circuit
Fig.2 Appearance
3
3-1
Features
Main Switching Device - High-speed IGBT (MR2900 Series)
The unique (patented) structure of the Shindengen high-speed IGBT provides both high-speed
switching and low saturation voltage in a single device, thus also permitting its use in switching
power supplies. This newly developed high-speed IGBT is positioned between the MOSFET and
the bipolar transistor (Fig.3).
Fig.4 shows a comparison of losses in the 900V resistant switching device in the worldwide
partial resonance power supply. The loss curve is comparatively flat in relation to the wide range
of input voltage, and as such the device is optimized for use with a variety of international input
voltages.
Device
MOSFET
Symbol
Drive
Voltage
ON loss
Large
Switching loss
Small
High-speed
IGBT
Voltage
IGBT
Voltage
BJT
Current
Small
Large
Fig.3 Comparison of Switching Devices
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Bipolar transistor
Main switch losses P [W]
High-speed IGBT
MOSFET
100V
200V
300V
AC input voltage Vin [V]
Fig.4 Comparison of Losses in 900V Resistant Switching Device
3-2
Advantages of 900V Resistance in the High-speed IGBT (MR2900 Series)
The MR2900 Series incorporates a 900V resistant high-speed IGBT for almost ideal partial
resonance operation.
Fig.5 shows a comparison between waveforms with 650V and 900V resistance. The use of the
900V resistant device allows a sufficiently small resonance condenser discharge current, with
consequently reduced switching losses. This in turn allows an increase in the capacity of the
resonance condenser C1, thus allowing lower noise and a power supply of higher efficiency.
The ability to maintain a sufficient margin of voltages resistance eliminates the need for a DCR
snubber circuit, thus reducing the number of components required and allowing design of power
supplies with superior cost-performance.
800
700
600
500
400
300
200
100
0
Voltage [V]
900V design
650V design
Current [A]
Small switching loss
Fig.5 Comparison between Waveforms with 650V and 900V Resistance
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Unnecessary
Discharge current reduced
Fig.6 Resonance Condenser Discharge Current at ON
3-3
Protection Circuits
1
Load-Shorting Protection
Inclusion of a load current reduction circuit enables reduction in heating under load and
alleviates stress on the device.
2
Protection Against Malfunction at ON
The Leading Edge Blank (LEB) prevents malfunctions in the over-current detect circuit
due to discharge current in the partial resonance condenser at ON.
3
Protection Against Malfunction at OFF
Inclusion of the ON-dead timer prevents malfunctions at OFF.
This function ensures that resonant oscillation due to the leakage inductance and the
resonance condenser at OFF, are recognized as trigger signals, and trigger input is then
masked to prevent switching ON again.
4
Over-current Protection
Over-current protection for the device consists of pulse-by-pulse over-current protection
to detect primary current, and a limitation on the ON width.
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