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MR754-T3

产品描述6 A, 50 V, SILICON, RECTIFIER DIODE
产品类别分立半导体    二极管   
文件大小35KB,共4页
制造商Won-Top Electronics Co., Ltd.
官网地址https://www.wontop.com/
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MR754-T3概述

6 A, 50 V, SILICON, RECTIFIER DIODE

MR754-T3规格参数

参数名称属性值
厂商名称Won-Top Electronics Co., Ltd.
包装说明O-PALF-W2
针数2
Reach Compliance Codecompli
ECCN代码EAR99
Is SamacsysN
其他特性HIGH RELIABILITY
应用GENERAL PURPOSE
外壳连接ISOLATED
配置SINGLE
二极管元件材料SILICON
二极管类型RECTIFIER DIODE
JESD-30 代码O-PALF-W2
最大非重复峰值正向电流400 A
元件数量1
相数1
端子数量2
最高工作温度150 °C
最低工作温度-50 °C
最大输出电流6 A
封装主体材料PLASTIC/EPOXY
封装形状ROUND
封装形式LONG FORM
最大重复峰值反向电压400 V
表面贴装NO
端子形式WIRE
端子位置AXIAL
Base Number Matches1

文档预览

下载PDF文档
WTE
POWER SEMICONDUCTORS
MR750 – MR7510
Pb
6.0A STANDARD DIODE
Features
!
!
!
!
!
Diffused Junction
Low Forward Voltage Drop
High Current Capability
High Reliability
High Surge Current Capability
A
B
A
Mechanical Data
!
!
!
!
!
!
!
Case: P-600, Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: Cathode Band
Weight: 2.1 grams (approx.)
Mounting Position: Any
Marking: Type Number
Lead Free: For RoHS / Lead Free Version,
Add “-LF” Suffix to Part Number, See Page 4
D
P-600
Dim
Min
Max
25.4
A
8.60
9.10
B
1.20
1.30
C
8.60
9.10
D
All Dimensions in mm
C
Maximum Ratings and Electrical Characteristics
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
@T
A
=25°C unless otherwise specified
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
(Note 1)
@T
A
= 60°C
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
Forward Voltage
Peak Reverse Current
At Rated DC Blocking Voltage
@I
F
= 6.0A
@T
A
= 25°C
@T
A
= 100°C
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
MR750
MR751
MR752
MR754
MR756
MR758 MR7510
Unit
50
35
100
70
200
140
400
280
6.0
600
420
800
560
1000
700
V
V
A
I
FSM
V
FM
I
RM
C
j
R
JA
T
j
T
STG
400
1.0
5.0
1.0
150
20
-50 to +150
-50 to +150
A
V
µA
mA
pF
°C/W
°C
°C
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance Junction to Ambient
(Note 1)
Operating Temperature Range
Storage Temperature Range
Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
MR750 – MR7510
1 of 4
© 2006 Won-Top Electronics

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