140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
MRF581/MRF581A
RF & MICROWAVE DISCRETE
LOW POWER TRANSISTORS
Features
•
•
•
•
Low Noise - 2.5 dB @ 500 MHZ
Gain at Optimum Noise Figure = 15.5 dB @ 500 MHz
Ftau - 5.0 GHz @ 10v, 75mA
Cost Effective MacroX Package
Macro X
DESCRIPTION:
Designed for high current, low power, low noise, amplifiers up to 1.0 GHz.
ABSOLUTE MAXIMUM RATINGS
(Tcase = 25
°
C)
Symbol
V
CEO
V
CBO
V
EBO
I
C
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
MRF581
18
30
2.5
200
MRF581A
15
Unit
Vdc
Vdc
Vdc
mA
Thermal Data
P
D
D
Total Device Dissipation @ TC = 50º C
Derate above 50º C
Total Device Dissipation @ TC = 25º C
Derate above 25º C
Storage Junction Temperature Range
-65 to +150
Maximum Junction Temperature
150
º
C
º
C
2.5
25
1.25
10
Watts
mW/ ºC
Watts
mW/ ºC
P
Tstg
T
Jmax
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at
WWW.ADVANCEDPOWER.COM
or contact our factory direct.
MRF581/MRF581A
ELECTRICAL SPECIFICATIONS (Tcase = 25
°
C)
STATIC
(off)
Symbol
BVCEO
BVCBO
BVEBO
ICBO
IEBO
Test Conditions
Collector-Emitter Breakdown Voltage
(IC = 5.0 mAdc, IB = 0)
Collector-Base Breakdown Voltage
(IC = 1.0 mAdc, IE = 0)
Emitter-Base Breakdown Voltage
(IE = 0.1 mAdc, IC = 0)
Collector Cutoff Current
(VCB = 15 Vdc, VBE = 0 Vdc)
Emitter Cutoff Current
(VCE = 2.0 Vdc, VBE = 0 Vdc)
MRF581
MRF581A
Value
Min.
18
15
30
2.5
-
-
Typ.
-
-
-
-
-
Max.
-
-
-
0.1
0.1
Unit
Vdc
Vdc
Vdc
mA
mA
(on)
HFE
DC Current Gain
(IC = 50 mAdc, VCE = 5.0 Vdc)
MRF581
MRF581A
50
90
-
200
250
-
DYNAMIC
Symbol
COB
Ftau
Test Conditions
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Current-Gain Bandwidth Product
(IC = 75 mAdc, VCE = 10 Vdc, f = 1.0 GHz)
Value
Min.
-
-
Typ.
2.0
5.0
Max.
3.0
-
Unit
pF
GHz
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at
WWW.ADVANCEDPOWER.COM
or contact our factory direct.
MRF581/MRF581A
FUNCTIONAL
Symbol
NFmin
Test Conditions
Minimum Noise Figure
(IC = 50 mAdc, VCE = 10 Vdc, f = 0.5 GHz)
Power Gain @ NFmin
(IC = 50 mAdc, VCE = 10 Vdc, f = 0.5 GHz)
Maximum Unilateral Gain (1)
IC = 50 mAdc, VCE = 10 Vdc, f = 500 MHz
Maximum Stable Gain
IC = 50 mAdc, VCE = 10 Vdc, f = 500 MHz
Insertion Gain
IC = 50 mAdc, VCE = 10 Vdc, f = 500 MHz
MRF581
MRF581A
Value
Min.
-
13
-
-
14
Typ.
2.5
2.0
15.5
17.8
20
15
-
-
-
Max.
3.0
3.0
Unit
dB
dB
dB
dB
dB
G
G
NF
U max
MSG
|S
21
|
2
Table 1. Common Emitter S-Parameters, @ VCE = 10 V, IC = 50 mA
f
S11
S21
S12
S22
(MHz)
100
200
300
400
500
600
700
800
900
1000
|S11|
.610
.659
.671
.675
.677
.678
.677
.679
.678
.682
∠φ
-137
-161
-171
-178
176
172
168
184
160
156
|S21|
23.8
13.2
9.0
6.8
5.5
4.6
4.0
3.5
3.1
2.8
∠φ
116
98
89
83
77
72
68
64
60
56
|S12|
.026
.033
.040
.047
.055
.064
.073
.082
.092
.102
∠φ
46
47
51
55
58
61
62
63
64
65
|S22|
.522
.351
.304
.292
.293
.299
.306
.314
.322
.311
∠φ
-78
-106
-120
-128
-132
-134
-135
-136
-138
-139
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at
WWW.ADVANCEDPOWER.COM
or contact our factory direct.
MRF581/MRF581A
C1, C4, C5, C6, C8, C9 — 1000 pF, Chip Capacitor C2, C3 — 1.0–10 pF, Johanson Capacitor
C7, C10 — 10
µF,
Tantalum Capacitor
R1 — 1.0 kΩ Res.
RFC — VK–200, Ferroxcube
FB — Ferrite Bead, Ferroxcube, 56–590–65/3B
TL1, TL7, TL8 — Microstrip 0.162, x 0.600,
TL2 — Microstrip 0.162, x 1.000,
TL3 — Microstrip 0.162, x 0.800,
TL4 — Microstrip 0.162, x 0.440,
TL5 — Microstrip 0.120, x 0.440,
TL6 — Microstrip 0.120, x 1.160,
TL9, TL10 — Microstrip 0.025, x 4.250,
Board Material — 0.0625, Thick Glass Teflon
ε
r = 2.55
Figure 1. Minimum Noise Figure and Gain @ Minimum Noise Figure.
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at
WWW.ADVANCEDPOWER.COM
or contact our factory direct.
MRF581/MRF581A
RF Low Power PA, LNA, and General Purpose Discrete Selector Guide
GPE Freq (MHz)
Efficiency (%)
IC max (mA)
Gu Max (dB)
NF (dB)
NF IC (mA)
NF VCE
GN (dB)
Ccb(pF)
BVCEO
IC max (mA)
3.5
20
30
30
1
1
3
1
1
1
2.6
12
15
25
15
15
12
15
15
15
1
15
15
12
16
2.2
17
400
400
400
50
40
150
30
50
35
100
200
200
30
50
40
200
200
Pout (watts)
Freq (MHz)
Package
Device
SO-8
TO-39
POWER MACRO
POWER MACRO
TO-39
TO-39
TO-72
MA C R O X
MA C R O X
TO-39
SO-8
POWER MACRO
POWER MACRO
MA C R O X
MA C R O X
SO-8
POWER MACRO
POWER MACRO
MRF4427, R2
2N4427
MRF553
MRF553T
MRF607
2N6255
2N5179
MRF559
MRF559
2N3866A
MRF555
MRF555T
MRF559
MRF559
MRF8372,R1,R2
MRF557
MRF557T
NPN
NPN
NPN
NPN
NPN
NPN
NPN
175 0.15
175
1
175 1.5
175 1.5
175 1.75
175
3
200
0.5
0.5
1
1
1.5
1.5
0.5
0.5
0.75
1.5
1.5
18
10
11.5
11.5
11.5
7.8
20
10
13
10
10
11
11
6.5
9.5
8
8
8
60
50
60
50
50
50
65
60
45
45
50
50
70
65
55
55
55
12
12
12.5
12.5
12.5
12.5
6
7.5
12.5
28
28
12.5
12.5
7.5
12.5
12.5
12.5
12.5
20 400
20 400
16 500
16 500
16 330
18 1000
12 50
16
16
30
30
16
16
16
16
16
16
16
150
150
400
400
400
400
150
150
200
400
400
TO-39
TO-39
SO-8
TO-72
TO-72
TO-39
TO-72
TO-72
MACRO T
MACRO T
SO-8
MACRO X
Macro
TO-72
TO-72
MACRO X
TO-39
2N5109
MRF5943C
NPN
NPN
200
200
200
200
300
300
450
450
500
500
500
500
500
500
500
500
500
3
3.4
3.4
4.5
5.5
7.5
1.5
5
1.9
2
2
2
2.4
2.5
2.5
2.5
3
10
30
30
1.5
50
50
5
2
2
10
50
50
2
2
5
50
90
15
15
15
6
6
15
6
5
5
10
10
10
10
5
10
10
15
15
11
15.5
14
15
11
12
11.4
15
17
13
5.5
11
14
16.5
14.5
17.8
15
18
20
15
17.8
14.5
1200
1000
1300
900
1600
4600
4000
1400
5000
500
5000
5000
5000
1300
4500
5000
4500
MRF5943, R1, R2 NPN
2N5179
2N2857
MRF517
MRF904
2N6304
BFR91
BFR96
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN 512
NPN 512
NPN 400
NPN 470
NPN 470
NPN 870
NPN 870
NPN 870
NPN 870
NPN 870
MRF5812, R1, R2 NPN
MRF581A
BFR90
BFY90
MRF914
MRF581
MRF586
NPN
NPN
NPN
NPN
NPN
NPN
MRF3866, R1, R2 NPN 400
MACRO X
MACRO X
MACRO T
MACRO T
MRF951
MRF571
BFR91
BFR90
NPN 1 0 0 0
NPN 1 0 0 0
NPN 1 0 0 0
NPN 1 0 0 0
1.3
1.5
2.5
3
5
10
2
2
6
6
5
10
14
10
8
10
17
11
8000
8000
5000
Ftau (MHz)
GPE (dB)
GPE VCC
Package
Device
BVCEO
Type
Type
0.45
1
1
1
10 100
10
12
15
70
35
30
12.5 5 0 0 0
TO-39
TO-39
MRF545
MRF544
PNP
NPN
14
1400
2
70 400
70 400
13.5 1500
RF (Low Power PA / General Purpose) Selection Guide
RF (LNA / General Purpose) Selection Guide
Low Cost RF Plastic Package Options
1
2
3
4
3
2
4
1
2
8
1
5
Macro T
Macro X
Power Macro
SO-8
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at
WWW.ADVANCEDPOWER.COM
or contact our factory direct.
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