140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
MRF586
RF & MICROWAVE DISCRETE
LOW POWER TRANSISTORS
Features
•
•
•
•
Silicon NPN, TO-39 packaged VHF/UHF Transistor
F
t
= 3.0 Ghz (typ) @ 300MHz, 14v, 90mA,
G
U max
2
= 12.5dB (typ) @ 300 MHz, 15v, 40mA
1. Emitter
2. Base
3. Collector
|S
21
|
= 12.5dB (typ) @ 300 MHz, 15v, 40mA
TO-39
DESCRIPTION:
The MRF586 is a silicon NPN transistor, designed for VHF and UHF equipment. Applications include amplifier,
pre-driver, driver, and output stages. It is also suitable for oscillator and frequency-multiplier functions.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25
°
C)
Symbol
V
CEO
V
CBO
V
EBO
P
D
I
C
Parameter
Collector-Emitter
Collector-Base Voltage
Emitter-Base Voltage
Total Device Dissipation
Collector Current
Value
17
35
3.0
1.0
200
Unit
V
V
V
W
mA
Thermal Data
P
D
Total Device Dissipation @ T
A
= 25°
C
Derate above 25°
C
1.0
5.71
Watts
mW/°
C
ELECTRICAL SPECIFICATIONS
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at
WWW.ADVANCEDPOWER.COM
or contact our factory direct.
MRF586
STATIC
Symbol
Test Conditions
Value
Min.
Typ.
Max.
Unit
BV
CEO
BV
EBO
BV
CBO
I
CBO
HFE
I
C
= 5.0 mA
I
E
= 0.1 mA
I
C
=1.0 mA
V
CB
= 10 V
V
CE
= 5.0 V
I
C
= 50 mA
17
3.0
30
-
40
-
-
-
50
-
-
-
-
-
200
V
V
V
µ
A
-
DYNAMIC
Symbol
Test Conditions
f = 300 MHz
f = 1.0MHz
Value
Min.
-
Typ.
3.0
3.0
Max.
-
Unit
GHz
pf
f
T
C
OB
I
C
= 90 mA
V
CB
= 10V
V
CE
= 14 V
FUNCTIONAL
Symbol
Test Conditions
Maximum Unilateral Gain
(1)
Maximum Available Gain
Insertion Gain
IC = 40 mA, VCE = 15V, f =
300 MHz
IC = 40 mA, VCE = 15V, f =
300 MHz
IC = 40 mA, VCE = 15V, f =
300 MHz
Value
Min.
-
-
10
Typ.
12.5
13.5
11.5
Max.
-
-
-
Unit
dB
dB
dB
G
U max
MAG
2
|S
21
|
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at
WWW.ADVANCEDPOWER.COM
or contact our factory direct.
MRF586
Table 1. Common Emitter S-Parameters, @ VCE = 15 V, IC = 40 mA
f
S11
S21
S12
S22
(MHz)
100
200
300
400
500
600
700
800
900
1000
|S11|
.096
.129
.165
.185
.237
.247
.247
.238
.260
.246
∠φ
107
114
108
115
115
112
113
118
119
116
|S21|
10.28
5.58
3.94
3.04
2.64
2.42
2.26
2.06
1.97
2.06
∠φ
103
89
79
71
67
60
54
48
47
43
|S12|
.053
.104
.160
.192
.246
.288
.326
.334
.369
.405
∠φ
84
83
76
74
75
71
69
67
71
67
|S22|
.479
.361
.356
.388
.384
.408
.417
.432
.420
.444
∠φ
-40
-49
-56
-71
-79
-82
-84
-87
-91
-92
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at
WWW.ADVANCEDPOWER.COM
or contact our factory direct.
MRF586
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at
WWW.ADVANCEDPOWER.COM
or contact our factory direct.
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