Freescale Semiconductor
Technical Data
Document Number: MRF6S19140H
Rev. 5, 5/2007
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for PCN and PCS base station applications with frequencies from
1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier
applications. To be used in Class AB for PCN - PCS/cellular radio and WLL
applications.
•
Typical 2 - Carrier N - CDMA Performance: V
DD
= 28 Volts, I
DQ
= 1150 mA,
P
out
= 29 Watts Avg., Full Frequency Band, IS - 95 CDMA (Pilot, Sync,
Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz,
PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 16 dB
Drain Efficiency — 27.5%
IM3 @ 2.5 MHz Offset — - 37 dBc in 1.2288 MHz Channel Bandwidth
ACPR @ 885 kHz Offset — - 51 dBc in 30 kHz Channel Bandwidth
•
Capable of Handling 10:1 VSWR, @ 28 Vdc, 1960 MHz, 140 Watts CW
Output Power
Features
•
Characterized with Series Equivalent Large - Signal Impedance Parameters
•
Internally Matched for Ease of Use
•
Qualified Up to a Maximum of 32 V
DD
Operation
•
Integrated ESD Protection
•
Optimized for Doherty Applications
•
RoHS Compliant
•
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MRF6S19140HR3
MRF6S19140HSR3
1930 - 1990 MHz, 29 W AVG., 28 V
2 x N - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465B - 03, STYLE 1
NI - 880
MRF6S19140HR3
CASE 465C - 02, STYLE 1
NI - 880S
MRF6S19140HSR3
Table 1. Maximum Ratings
Rating
Drain - Source Voltage
Gate - Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
(1,2)
Symbol
V
DSS
V
GS
T
stg
T
C
T
J
Value
- 0.5, +68
- 0.5, +12
- 65 to +150
150
225
Unit
Vdc
Vdc
°C
°C
°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80°C, 140 W CW
Case Temperature 77°C, 29 W CW
Symbol
R
θJC
Value
(2,3)
0.33
0.38
Unit
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
3. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
©
Freescale Semiconductor, Inc., 2004-2007. All rights reserved.
MRF6S19140HR3 MRF6S19140HSR3
1
RF Device Data
Freescale Semiconductor
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22 - A114)
Machine Model (per EIA/JESD22 - A115)
Charge Device Model (per JESD22 - C101)
Class
2 (Minimum)
A (Minimum)
IV (Minimum)
Table 4. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Characteristic
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V
DS
= 68 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
Gate - Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 300
μAdc)
Gate Quiescent Voltage
(V
DD
= 28 Vdc, I
D
= 1150 mAdc, Measured in Functional Test)
Drain - Source On - Voltage
(V
GS
= 10 Vdc, I
D
= 3 Adc)
Dynamic Characteristics
(1)
Reverse Transfer Capacitance
(V
DS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
C
rss
—
2
—
pF
V
GS(th)
V
GS(Q)
V
DS(on)
1
2
0.1
2
2.8
0.21
3
4
0.3
Vdc
Vdc
Vdc
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
1
μAdc
μAdc
μAdc
Symbol
Min
Typ
Max
Unit
Functional Tests
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 1150 mA, P
out
= 29 W Avg., f1 = 1930 MHz,
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz, 2 - carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carriers. ACPR measured in
30 kHz Channel Bandwidth @
±885
kHz Offset. IM3 measured in 1.2288 MHz Channel Bandwidth @
±2.5
MHz Offset. PAR = 9.8 dB @
0.01% Probability on CCDF.
Power Gain
Drain Efficiency
Intermodulation Distortion
Adjacent Channel Power Ratio
Input Return Loss
1. Part is internally matched both on input and output.
G
ps
η
D
IM3
ACPR
IRL
15
26
—
—
—
16
27.5
- 37
- 51
- 15
18
—
- 35
- 48
-9
dB
%
dBc
dBc
dB
MRF6S19140HR3 MRF6S19140HSR3
2
RF Device Data
Freescale Semiconductor
+
V
BIAS
R3
+
C13
R1
R5
C7
C3
Z5
Z6
Z7
Z8
Z9
B1
C5
C9
C11
C15
V
SUPPLY
Z10
C2
RF
OUTPUT
RF
INPUT
Z1
C1
Z2
Z3
Z4
DUT
V
BIAS
R4
+
C14
R2
R6
C8
C4
B2
C6
C10
C12
V
SUPPLY
Z1
Z2
Z3
Z4
Z5
Z6
0.864″
1.373″
0.282″
0.103″
0.094″
0.399″
x 0.082″
x 0.082″
x 0.900″
x 0.900″
x 1.055″
x 1.055″
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Z7
Z8
Z9
Z10
PCB
0.115″ x 0.569″ Microstrip
0.191″ x 0.289″ Microstrip
0.681″ x 0.081″ Microstrip
1.140″ x 0.081″ Microstrip
Arlon GX0300 - 55 - 22, 0.030″,
ε
r
= 2.5
Figure 1. MRF6S19140HR3(HSR3) Test Circuit Schematic
Table 5. MRF6S19140HR3(HSR3) Test Circuit Component Designations and Values
Part
B1, B2
C1, C2
C3, C4, C5, C6
C7, C8, C9, C10, C11, C12
C13, C14
C15
R1, R2
R3, R4
R5, R6
Description
Beads, Surface Mount
39 pF Chip Capacitors
9.1 pF Chip Capacitors
10
μF,
50 V Chip Capacitors
47
μF,
50 V Electrolytic Capacitors
470
μF,
63 V Electrolytic Capacitor
560 kΩ, 1/4 W Chip Resistors
1.0 kΩ, 1/4 W Chip Resistors
12
Ω,
1/4 W Chip Resistors
Part Number
2743019447
ATC100B390JT500XT
ATC100B9R1CT500XT
GRM55DR61H106KA88B
EMVY500ADA470MF80G
ESMG630ELL471MK205
CRCW12065600FKTA
CRCW12061001FKTA
CRCW120612R0FKTA
Manufacturer
Fair - Rite
ATC
ATC
Murata
Nippon
United Chemi - Con
Vishay
Vishay
Vishay
MRF6S19140HR3 MRF6S19140HSR3
RF Device Data
Freescale Semiconductor
3
6S19140
C13
R3
B1
R5
C3
C5
C9 C11
R1
C1
C7
C15
C2
CUT OUT AREA
C4
C6
©
Motorola, Inc.
2002 DS1464
R2
C8
R4
C14
B2
R6
C10 C12
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These
changes will have no impact on form, fit or function of the current product.
Figure 2. MRF6S19140HR3(HSR3) Test Circuit Component Layout
MRF6S19140HR3 MRF6S19140HSR3
4
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
η
D
G
ps
V
DD
= 28 Vdc, P
out
= 29 W (Avg.), I
DQ
= 1150 mA
2−Carrier N−CDMA, 2.5 MHz Carrier Spacing,
1.2288 MHz Channel Bandwidth, PAR = 9.8 dB
@ 0.01% Probability (CCDF)
η
D
, DRAIN
EFFICIENCY (%)
−10
−12
−14
−16
−18
−20
−22
−24
−26
−28
−30
η
D
, DRAIN
EFFICIENCY (%)
−10
−12
−14
−16
−18
−20
−22
−24
−26
−28
−30
900 mA
−30
600 mA
−40
I
DQ
= 1700 mA
1500 mA
100
1000
10
IRL, INPUT RETURN LOSS (dB)
IM3 (dBc), ACPR (dBc)
IRL, INPUT RETURN LOSS (dB)
IM3 (dBc), ACPR (dBc)
20
18
16
G
ps
, POWER GAIN (dB)
14
12
10
8
6
4
2
0
1910 1920
1930 1940
1950
1960
1970
1980 1990
ACPR
IM3
IRL
40
30
20
10
0
−10
−20
−40
−60
−80
−100
2000
f, FREQUENCY (MHz)
Figure 3. 2 - Carrier N - CDMA Broadband Performance @ P
out
= 29 Watts Avg.
18
16
G
ps
, POWER GAIN (dB)
14
12
10
8
η
D
G
ps
V
DD
= 28 Vdc, P
out
= 75 W (Avg.), I
DQ
= 1150 mA
2−Carrier N−CDMA, 2.5 MHz Carrier Spacing,
1.2288 MHz Channel Bandwidth, PAR = 9.8 dB
@ 0.01% Probability (CCDF)
50
40
30
20
0
−20
IRL
IM3
6
4
2
1910
−40
−60
ACPR
1920
1930 1940
1950
1960
1970
1980 1990
−80
2000
f, FREQUENCY (MHz)
Figure 4. 2 - Carrier N - CDMA Broadband Performance @ P
out
= 75 Watts Avg.
18
17
G
ps
, POWER GAIN (dB)
1500 mA
16
15
14
13
12
1
10
100
400
P
out
, OUTPUT POWER (WATTS) PEP
1150 mA
900 mA
600 mA
V
DD
= 28 Vdc
f1 = 1958.75 MHz, f2 = 1961.25 MHz
Two −Tone Measurements, 2.5 MHz Tone Spacing
IMD, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
I
DQ
= 1700 mA
−10
V
DD
= 28 Vdc
f1 = 1958.75 MHz, f2 = 1961.25 MHz
Two −Tone Measurements, 2.5 MHz Tone Spacing
−20
−50
1150 mA
−60
1
P
out
, OUTPUT POWER (WATTS) PEP
Figure 5. Two - Tone Power Gain versus
Output Power
Figure 6. Third Order Intermodulation Distortion
versus Output Power
MRF6S19140HR3 MRF6S19140HSR3
RF Device Data
Freescale Semiconductor
5
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