1MX8 MASK PROM, 200ns, PDIP42, 0.600 INCH, PLASTIC, DIP-42
| 参数名称 | 属性值 |
| 厂商名称 | Renesas(瑞萨电子) |
| 零件包装代码 | DIP |
| 包装说明 | DIP, |
| 针数 | 42 |
| Reach Compliance Code | compliant |
| ECCN代码 | EAR99 |
| Is Samacsys | N |
| 最长访问时间 | 200 ns |
| 备用内存宽度 | 16 |
| JESD-30 代码 | R-PDIP-T42 |
| 长度 | 52.8 mm |
| 内存密度 | 8388608 bit |
| 内存集成电路类型 | MASK ROM |
| 内存宽度 | 8 |
| 功能数量 | 1 |
| 端子数量 | 42 |
| 字数 | 1048576 words |
| 字数代码 | 1000000 |
| 工作模式 | ASYNCHRONOUS |
| 最高工作温度 | 70 °C |
| 最低工作温度 | |
| 组织 | 1MX8 |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装代码 | DIP |
| 封装形状 | RECTANGULAR |
| 封装形式 | IN-LINE |
| 并行/串行 | PARALLEL |
| 认证状态 | Not Qualified |
| 座面最大高度 | 5.08 mm |
| 最大供电电压 (Vsup) | 5.5 V |
| 最小供电电压 (Vsup) | 4.5 V |
| 标称供电电压 (Vsup) | 5 V |
| 表面贴装 | NO |
| 技术 | CMOS |
| 温度等级 | COMMERCIAL |
| 端子形式 | THROUGH-HOLE |
| 端子节距 | 2.54 mm |
| 端子位置 | DUAL |
| 宽度 | 15.24 mm |
| Base Number Matches | 1 |
| HN62428P-20 | HN62428FB-15 | HN62428FB-20 | HN62428P-15 | HN62428TT-20 | HN62428TT-15 | |
|---|---|---|---|---|---|---|
| 描述 | 1MX8 MASK PROM, 200ns, PDIP42, 0.600 INCH, PLASTIC, DIP-42 | 1MX8 MASK PROM, 150ns, PDSO44, PLASTIC, SOP-44 | 1MX8 MASK PROM, 200ns, PDSO44, PLASTIC, SOP-44 | 1MX8 MASK PROM, 150ns, PDIP42, 0.600 INCH, PLASTIC, DIP-42 | 1MX8 MASK PROM, 200ns, PDSO44, PLASTIC, TSOP2-44 | 1MX8 MASK PROM, 150ns, PDSO44, PLASTIC, TSOP2-44 |
| 零件包装代码 | DIP | SOIC | SOIC | DIP | TSOP2 | TSOP2 |
| 包装说明 | DIP, | SOP, | SOP, | DIP, | TSOP2, | TSOP2, |
| 针数 | 42 | 44 | 44 | 42 | 44 | 44 |
| Reach Compliance Code | compliant | compliant | compliant | compliant | compliant | unknown |
| ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| 最长访问时间 | 200 ns | 150 ns | 200 ns | 150 ns | 200 ns | 150 ns |
| 备用内存宽度 | 16 | 16 | 16 | 16 | 16 | 16 |
| JESD-30 代码 | R-PDIP-T42 | R-PDSO-G44 | R-PDSO-G44 | R-PDIP-T42 | R-PDSO-G44 | R-PDSO-G44 |
| 长度 | 52.8 mm | 28.5 mm | 28.5 mm | 52.8 mm | 18.41 mm | 18.41 mm |
| 内存密度 | 8388608 bit | 8388608 bit | 8388608 bit | 8388608 bit | 8388608 bit | 8388608 bit |
| 内存集成电路类型 | MASK ROM | MASK ROM | MASK ROM | MASK ROM | MASK ROM | MASK ROM |
| 内存宽度 | 8 | 8 | 8 | 8 | 8 | 8 |
| 功能数量 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 42 | 44 | 44 | 42 | 44 | 44 |
| 字数 | 1048576 words | 1048576 words | 1048576 words | 1048576 words | 1048576 words | 1048576 words |
| 字数代码 | 1000000 | 1000000 | 1000000 | 1000000 | 1000000 | 1000000 |
| 工作模式 | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
| 最高工作温度 | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C |
| 组织 | 1MX8 | 1MX8 | 1MX8 | 1MX8 | 1MX8 | 1MX8 |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装代码 | DIP | SOP | SOP | DIP | TSOP2 | TSOP2 |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | IN-LINE | SMALL OUTLINE | SMALL OUTLINE | IN-LINE | SMALL OUTLINE, THIN PROFILE | SMALL OUTLINE, THIN PROFILE |
| 并行/串行 | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 座面最大高度 | 5.08 mm | 3 mm | 3 mm | 5.08 mm | 1.2 mm | 1.2 mm |
| 最大供电电压 (Vsup) | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V |
| 最小供电电压 (Vsup) | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V |
| 标称供电电压 (Vsup) | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
| 表面贴装 | NO | YES | YES | NO | YES | YES |
| 技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
| 温度等级 | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL |
| 端子形式 | THROUGH-HOLE | GULL WING | GULL WING | THROUGH-HOLE | GULL WING | GULL WING |
| 端子节距 | 2.54 mm | 1.27 mm | 1.27 mm | 2.54 mm | 0.8 mm | 0.8 mm |
| 端子位置 | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL |
| 宽度 | 15.24 mm | 12.6 mm | 12.6 mm | 15.24 mm | 10.16 mm | 10.16 mm |
| 厂商名称 | Renesas(瑞萨电子) | - | - | Renesas(瑞萨电子) | Renesas(瑞萨电子) | Renesas(瑞萨电子) |
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