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MXSMBJ85CAE3/TR

产品描述Trans Voltage Suppressor Diode, 600W, 85V V(RWM), Bidirectional, 1 Element, Silicon, DO-214AA, ROHS COMPLIANT, PLASTIC PACKAGE-2
产品类别分立半导体    二极管   
文件大小162KB,共4页
制造商Microsemi
官网地址https://www.microsemi.com
标准
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MXSMBJ85CAE3/TR概述

Trans Voltage Suppressor Diode, 600W, 85V V(RWM), Bidirectional, 1 Element, Silicon, DO-214AA, ROHS COMPLIANT, PLASTIC PACKAGE-2

MXSMBJ85CAE3/TR规格参数

参数名称属性值
是否Rohs认证符合
厂商名称Microsemi
包装说明R-PDSO-C2
Reach Compliance Codecompliant
ECCN代码EAR99
Is SamacsysN
最大击穿电压104 V
最小击穿电压94.4 V
配置SINGLE
二极管元件材料SILICON
二极管类型TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码DO-214AA
JESD-30 代码R-PDSO-C2
JESD-609代码e3
最大非重复峰值反向功率耗散600 W
元件数量1
端子数量2
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
峰值回流温度(摄氏度)260
极性BIDIRECTIONAL
最大功率耗散1.38 W
认证状态Not Qualified
最大重复峰值反向电压85 V
表面贴装YES
技术AVALANCHE
端子面层MATTE TIN
端子形式J BEND
端子位置DUAL
处于峰值回流温度下的最长时间40
Base Number Matches1

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TECHNICAL DATA SHEET
Gort Road Business Park, Ennis, Co. Clare, Ireland.
Tel: +353 (0) 65 6840044, Fax: +353 (0) 65 6822298
Website: http://www.microsemi.com
6 Lake Street, Lawrence, MA 01841
Tel: 1-800-446-1158 / (978) 794-1666, Fax: (978) 6890803
SURFACE MOUNT 600 W
Transient Voltage Suppressor
- High Reliability controlled devices
- Unidirectional (A) and Bidirectional (CA) construction
- Available in both J-bend and Gull-wing terminations
- Selections for 5.0 to 170 V standoff voltages (V
WM
)
LEVELS
M, MA, MX, MXL
DEVICES
MSMBJ5.0A thru MSMBJ170CA, e3
and MSMBG5.0A thru MSMBG170CA, e3
FEATURES
High reliability controlled devices with wafer fabrication and assembly lot traceability
100 % surge tested devices
Optional up screening available by replacing the M prefix with MA, MX or MXL. These
prefixes specify various screening and conformance inspection options based on
MIL-PRF-19500. Refer to
MicroNote 129
for more details on the screening options.
Axial-leaded equivalent packages for through-hole mounting available as MP6KE6.8A to
MP6KE200CA
Moisture classification is Level 1 with no dry pack required per IPC/JEDEC J-STD-020B
RoHS compliant devices available by adding an “e3” suffix
3σ lot norm screening performed on Standby Current I
D
Refer to table below
for dimensions
APPLICATIONS / BENEFITS
Protects sensitive components such as IC’s, CMOS, Bipolar, BiCMOS, ECL, DTL, T
2
L, etc.
Protection from switching transients & induced RF
Protection from ESD and EFT per IEC 61000-4-2 and IEC 61000-4-4
Secondary lightning protection per IEC61000-4-5 with 42 Ohms source impedance:
o
Class 1: MSMB5.0A to MSMB120CA
o
Class 2: MSMB5.0A to MSMB60CA
o
Class 3: MSMB5.0A to MSMB30CA
o
Class 4: MSMB5.0A to MSMB15CA
Secondary lightning protection per IEC61000-4-5 with 12 Ohms source impedance:
o
Class 1: MSMB5.0A to MSMB36CA
o
Class 2: MSMB5.0A to MSMB18CA
MAXIMUM RATINGS
Peak Pulse Power dissipation at 25 ºC: 600 watts at 10/1000
μs
(also see Figures 1, 2, and
3) with impulse repetition rate (duty factor) of 0.01 % or less
t
clamping
(0 volts to V
BR
min.): < 100 ps theoretical for unidirectional and < 5 ns for bidirectional
Operating and Storage temperature: -65 °C to +150 °C
Thermal resistance: 25 °C/W junction to lead, or 90 °C/W junction to ambient when mounted
on FR4 PC board (1oz Cu) with recommended footprint (see page 2)
Steady-State Power dissipation: 5 watts at TL = 25 ºC, or 1.38 watts at TA = 25 ºC when
mounted on FR4 PC board with recommended footprint (see page 2)
Forward Surge at 25 ºC: 100 Amp peak impulse of 8.3 ms half-sine wave (unidirectional only)
Solder temperatures: 260 ºC for 10 s (maximum)
RF01000 Rev B, Sept 2011
High Reliability Product Group
Page 1 of 4
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