MMBT7002
MMBT7002
N
Version 2011-02-01
Power dissipation – Verlustleistung
2.9
±0.1
0.4
3
1.3
1.1
N-Channel Enhancement Mode Field Effect Transistor
N-Kanal Feldeffekt Transistor - Anreicherungstyp
N
200 mW
SOT-23
(TO-236)
0.01 g
Type
Code
1
1.9
2
2.5 max
Plastic case
Kunststoffgehäuse
±0.1
Weight approx. – Gewicht ca.
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
Dimensions - Maße [mm]
1=G
2=S
3=D
Maximum ratings (T
A
= 25°C)
Drain-Source-voltage – Drain-Source-Spannung
Drain-Gate-voltage – Drain-Gate-Spannung
Gate-Source-voltage – Gate-Source-Spannung
Power dissipation – Verlustleistung
Drain current continuos – Drainstrom (dc)
Peak Drain current – Drain-Spitzenstrom
Operating Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
R
GS
≤ 1 MΩ
dc
t
p
< 50 µs
V
DSS
V
DGR
V
GSS
V
GSS
P
tot
I
D
I
DM
T
j
T
S
Grenzwerte (T
A
= 25°C)
MMBT7002
60 V
60 V
± 20 V
± 40 V
200 mW
115 mA
800 mA
150°C
-55…+150°C
© Diotec Semiconductor AG
http://www.diotec.com/
1
MMBT7002
Characteristics (T
j
= 25°C)
Drain-Source breakdown voltage – Drain-Source-Durchbruchspannung
I
D
= 10 µA
Drain-Source leakage current – Drain-Source-Leckstrom
V
DS
= 60 V
Gate-Body leakage current – Gate-Substrat-Leckstrom
V
GS
= 20 V
Gate-Threshold voltage – Gate-Source Schwellspannung
V
GS
= V
DS
, I
D
= 250 µA
Drain-Source on-voltage – Drain-Source-Spannung
V
GS
= 10 V, I
D
= 500 mA
V
GS
= 5 V, I
D
= 50 mA
V
GS
= 10 V, I
D
= 500 mA
Forward Transconductance – Übertragungssteilheit
V
DS
≥ 10 V
DS(on)
, I
D
= 200 mA
Input Capacitance – Eingangskapazität
V
DS
= 25 V, f = 1 MHz
Output Capacitance – Ausgangskapazität
V
DS
= 25 V, f = 1 MHz
Reverse Transfer Capacitance – Rückwirkungskapazität
V
DS
= 25 V, f = 1 MHz
Turn-On Time – Einschaltzeit
V
DD
= 30 V, R
L
= 150 Ω, I
D
= 0.2 A, V
GS
= 10 V, R
G
= 25 Ω
Turn-Off Delay Time – Ausschaltverzögerung
V
DD
= 30 V, R
L
= 150 Ω, I
D
= 0.2 A, V
GS
= 10 V, R
G
= 25 Ω
t
off
20 ns
t
on
20 ns
C
rss
5 pF
C
oss
25 pF
C
iss
50 pF
V
DS(on)
3.75 V
1.5 V
7.5 Ω
80 mS
V
GS(th)
1V
2.5 V
±I
GSS
100 nA
BV
DSS
G short
I
DSS
1 µA
60 V
Kennwerte (T
j
= 25°C)
Min.
Typ.
Max.
Drain-Source on-state resistance – Drain-Source Einschaltwiderstand
R
DS(on)
g
FS
2
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