ON Semiconductort
Darlington Transistors
PNP Silicon
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Total Device Dissipation @ T
A
= 25°C
Derate above 25°C
Total Device Dissipation @ T
A
= 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
V
CES
V
CBO
V
EBO
I
C
P
D
P
D
T
J
, T
stg
MPSA62
–20
–20
–10
–500
625
5.0
1.5
12
–55 to +150
MPSA63
MPSA64
–30
–30
MPSA62
MPSA63
MPSA64
MPSA64 is a Preferred Device
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
Watts
mW/°C
°C
1
2
3
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Symbol
R
qJA
R
qJC
Max
200
83.3
Unit
°C/W
°C/W
BASE
2
COLLECTOR 3
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I
C
= –100
µAdc,
V
BE
= 0)
MPSA62
MPSA63, MPSA64
Collector Cutoff Current
(V
CB
= –15 Vdc, I
E
= 0)
MPSA62
(V
CB
= –30 Vdc, I
E
= 0)
MPSA63, MPSA64
Emitter Cutoff Current
(V
EB
= –10 Vdc, I
C
= 0)
I
CBO
—
—
–100
–100
nAdc
V
(BR)CES
–20
–30
—
—
Vdc
EMITTER 1
I
EBO
—
–100
nAdc
Preferred
devices are ON Semiconductor recommended choices for future use and best overall value.
©
Semiconductor Components Industries, LLC, 2001
884
March, 2001 – Rev. 1
Publication Order Number:
MPSA62/D
MPSA62 MPSA63 MPSA64
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS
(1)
DC Current Gain
(I
C
= –10 mAdc, V
CE
= –5.0 Vdc)
h
FE
MPSA63
MPSA64
MPSA62
MPSA63
MPSA64
V
CE(sat)
MPSA62
MPSA63, MPSA64
V
BE(on)
MPSA62
MPSA63, MPSA64
—
—
–1.4
–2.0
—
—
–1.0
–1.5
Vdc
5,000
10,000
20,000
10,000
20,000
—
—
—
—
—
Vdc
—
(I
C
= –100 mAdc, V
CE
= –5.0 Vdc)
Collector–Emitter Saturation Voltage
(I
C
= –10 mAdc, I
B
= –0.01 mAdc)
(I
C
= –100 mAdc, I
B
= –0.1 mAdc)
Base–Emitter On Voltage
(I
C
= –10 mAdc, V
CE
= –5.0 Vdc)
(I
C
= –100 mAdc, V
CE
= –5.0 Vdc)
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(2)
(I
C
= –100 mAdc, V
CE
= –5.0 Vdc, f = 100 MHz)
1. Pulse Test: Pulse Width
v
300
ms;
Duty Cycle
v
2.0%.
2. f
T
= |h
fe
|
S
f
test
.
f
T
MPSA63, MPSA64
125
—
MHz
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885
MPSA62 MPSA63 MPSA64
200
hFE , DC CURRENT GAIN (X1.0 K)
100
70
50
30
20
10
7.0
5.0
3.0
2.0
-0.3
25°C
V
CE
= -2.0 V
-5.0 V
T
A
= 125°C
-10 V
-55°C
-0.5
-0.7
-1.0
-2.0
-3.0
-5.0
-7.0
-10
-20
-30
-50
-70
-100
-200
-300
I
C
, COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
-2.0
T
A
= 25°C
-1.6
V, VOLTAGE (VOLTS)
-1.2
V
BE(on)
@ V
CE
= -5.0 V
-0.8
-0.4
0
-0.3 -0.5
V
CE(sat)
@ I
C
/I
B
= 1000
I
C
/I
B
= 100
V
BE(sat)
@ I
C
/I
B
= 100
-2.0
-1.8
-1.6
-1.4
-1.2
-1.0
-0.8
-0.6
-0.1-0.2 -0.5 -1 -2
I
C
= -10 mA -50 mA -100 mA -175 mA
T
A
= 25°C
-300 mA
-1.0
-2 -3 -5
-10 -20 -30 -50
I
C
, COLLECTOR CURRENT (mA)
-100 -200 -300
-5 -10 -20 -50 -100-200 -500 -1K-2K -5K-10K
I
B
, BASE CURRENT (µA)
Figure 2. “On” Voltage
Figure 3. Collector Saturation Region
|h FE |, HIGH FREQUENCY CURRENT GAIN
10
4.0
3.0
2.0
1.0
0.4
0.2
0.1
-1.0 -2.0
-5.0
-10
-20
-50
-100 -200
-500
-1K
V
CE
= -5.0 V
f = 100 MHz
T
A
= 25°C
-1000
IC, COLLECTOR CURRENT (mA)
1.0 ms
T
A
= 25°C
T
C
= 25°C
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
(DUTY CYCLE
≤
10%) MPSA62
MPSA63
-20
-40 -60
-2.0
-4.0 -6.0
-10
100
µs
-300
-200
-100
-50
-20
-10
-1.0
1.0 s
I
C
, COLLECTOR CURRENT (mA)
V
CE
, COLLECTOR VOLTAGE (VOLTS)
Figure 4. High Frequency Current Gain
Figure 5. Active Region, Safe Operating Area
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