MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MPS6601/D
Amplifier Transistors
COLLECTOR
3
2
BASE
NPN
1
EMITTER
2
BASE
PNP
1
EMITTER
COLLECTOR
3
NPN
MPS6601
MPS6602*
PNP
MPS6651
MPS6652*
Voltage and current are negative
for PNP transistors
*Motorola Preferred Device
MAXIMUM RATINGS
Rating
Collector – Emitter Voltage
MPS6601/6651
MPS6602/6652
Collector – Base Voltage
MPS6601/6651
MPS6602/6652
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
VEBO
IC
PD
PD
TJ, Tstg
VCBO
25
30
4.0
1000
625
5.0
1.5
12
– 55 to
+150
Vdc
mAdc
mW
mW/°C
Watts
mW/°C
°C
Symbol
VCEO
25
40
Vdc
Value
Unit
Vdc
1
2
3
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Symbol
R
q
JA(1)
R
q
JC
Max
200
83.3
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage
(IC = 1.0 mAdc, IB = 0)
Collector – Base Breakdown Voltage
(IC = 100
µAdc,
IE = 0)
Emitter – Base Breakdown Voltage
(IE = 10
µAdc,
IC = 0)
Collector Cutoff Current
(VCE = 25 Vdc, IB = 0)
(VCE = 30 Vdc, IB = 0)
Collector Cutoff Current
(VCB = 25 Vdc, IE = 0)
(VCB = 30 Vdc, IE = 0)
MPS6601/6651
MPS6602/6652
ICBO
MPS6601/6651
MPS6602/6652
—
—
0.1
0.1
V(BR)CEO
MPS6601/6651
MPS6602/6652
V(BR)CBO
MPS6601/6651
MPS6602/6652
V(BR)EBO
ICES
—
—
0.1
0.1
µAdc
25
40
4.0
—
—
—
Vdc
µAdc
25
40
—
—
Vdc
Vdc
1. R
q
JA is measured with the device soldered into a typical printed circuit board.
Preferred
devices are Motorola recommended choices for future use and best overall value.
Motorola Small–Signal Transistors, FETs and Diodes Device Data
©
Motorola, Inc. 1996
1
NPN MPS6601 MPS6602 PNP MPS6651 MPS6652
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 100 mAdc, VCE = 1.0 Vdc)
(IC = 500 mAdc, VCE = 1.0 Vdc)
(IC = 1000 mAdc, VCE = 1.0 Vdc)
Collector – Emitter Saturation Voltage
(IC = 1000 mAdc, IB = 100 mAdc)
Base–Emitter On Voltage
(IC = 500 mAdc, VCE = 1.0 Vdc)
hFE
50
50
30
VCE(sat)
VBE(on)
—
—
—
—
—
0.6
1.2
Vdc
Vdc
—
SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product
(IC = 50 mAdc, VCE = 10 Vdc, f = 100 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
fT
Cobo
100
—
—
30
MHz
pF
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
(VCC = 40 Vdc, IC = 500 mAdc,
IB1 = 50 mAdc,
300 ns Duty Cycle)
tp
td
—
—
—
—
25
30
250
50
ns
ns
ns
ns
w
tr
ts
tf
TURN–ON TIME
–1.0 V
VCC
+40
V
5.0
m
s
+10
V
0
tr = 3.0 ns
5.0
m
F
100
5.0
m
s
tr = 3.0 ns
* Total Shunt Capacitance of Test Jig and Connectors
For PNP Test Circuits, Reverse All Voltage Polarities
* CS
Vin
100
RB
RL
OUTPUT
Vin
TURN–OFF TIME
+VBB
VCC
+40
V
100
RB
5.0
m
F
100
* CS
RL
OUTPUT
t
6.0 pF
t
6.0 pF
Figure 1. Switching Time Test Circuits
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
NPN MPS6601 MPS6602 PNP MPS6651 MPS6652
NPN
300
200
h FE , CURRENT GAIN
h FE , CURRENT GAIN
100
70
50
VCE = –1.0 V
TJ = 25°C
200
PNP
100
70
50
VCE = 1.0 V
TJ = 25°C
10
100
IC, COLLECTOR CURRENT (mA)
1000
30
20
–10
–100
IC, COLLECTOR CURRENT (mA)
–1000
Figure 2. MPS6601/6602 DC Current Gain
Figure 3. MPS6651/6652 DC Current Gain
f T , CURRENT GAIN BANDWIDTH PRODUCT (MHz)
300
200
f T , CURRENT GAIN BANDWIDTH PRODUCT (MHz)
300
200
100
70
50
VCE = 10 V
TJ = 25°C
f = 30 MHz
10
100
200
1000
100
70
50
VCE = –10 V
TJ = 25°C
f = 30 MHz
–100
–200
–1000
30
IC, COLLECTOR CURRENT (mA)
30
–10
IC, COLLECTOR CURRENT (mA)
Figure 4. Current Gain Bandwidth Product
Figure 5. Current Gain Bandwidth Product
1.0
TJ = 25°C
–1.0
VBE(SAT) @ IC/IB = 10
–0.8
V, VOLTAGE (VOLTS)
TJ = 25°C
VBE(SAT) @ IC/IB = 10
0.8
V, VOLTAGE (VOLTS)
0.6
VBE(ON) @ VCE = 1.0 V
–0.6
VBE(ON) @ VCE = –1.0 V
0.4
–0.4
0.2
0
1.0
VCE(SAT) @ IC/IB = 10
–0.2
VCE(SAT) @ IC/IB = 10
10
100
1000
0
–1.0
–10
–100
–1000
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 6. On Voltages
Figure 7. On Voltages
Motorola Small–Signal Transistors, FETs and Diodes Device Data
3
NPN MPS6601 MPS6602 PNP MPS6651 MPS6652
NPN
80
TJ = 25°C
60
120
160
TJ = 25°C
PNP
C, CAPACITANCE (pF)
C, CAPACITANCE (pF)
40
Cib
80
Cib
40
Cob
Cob
Cib
–5.0
–1.0
–10
–15
–20
–2.0
–3.0
–4.0
VR, REVERSE VOLTAGE (VOLTS)
–25
–5.0
20
Cob
5.0
1.0
10
15
20
2.0
3.0
4.0
VR, REVERSE VOLTAGE (VOLTS)
25
5.0
0
Cob
Cib
0
Figure 8. Capacitance
Figure 9. Capacitance
10
VCE = 5.0 V
f = 1.0 kHz
TA = 25°C
IC = 100
m
A
10
VCE = –5.0 V
f = 1.0 kHz
TA = 25°C
NF, NOISE FIGURE (dB)
6.0
NF, NOISE FIGURE (dB)
8.0
8.0
6.0
IC = 100
m
A
4.0
4.0
2.0
0
10
100
1k
10 k
Rs, SOURCE RESISTANCE (OHMS)
2.0
0
10
100
1k
10 k
Rs, SOURCE RESISTANCE (OHMS)
Figure 10. MPS6601/6602 Noise Figure
Figure 11. MPS6651/6652 Noise Figure
10 k
5k
3k
1k
t, TIME (NS)
500
ts
200
100
50
20
10
10
20
50
100
200
tf
tr
td
500
1000
td @ VBE(off) = 0.5 V
VCC = 40 V
IC/IB = 10
IB1 = IB2
TJ = 25°C
10 k
5k
3k
1k
t, TIME (NS)
500
200
100
50
20
10
–10
–20
–50
–100
–200
tf
tr
td
–500
–1000
ts
td @ VBE(off) = –0.5 V
VCC = –40 V
IC/IB = 10
IB1 = IB2
TJ = 25°C
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 12. MPS6601/6602 Switching Times
Figure 13. MPS6651/6652 Switching Times
4
Motorola Small–Signal Transistors, FETs and Diodes Device Data
NPN MPS6601 MPS6602 PNP MPS6651 MPS6652
NPN
R
q
VB , TEMPERATURE COEFFICIENT (mV/
°
C)
R
q
VB , TEMPERATURE COEFFICIENT (mV/
°
C)
–0.8
–0.8
PNP
–1.2
–1.2
–1.6
R
q
VB for VBE
–1.6
R
q
VB for VBE
–2.0
–2.0
–2.4
–2.8
1.0
–2.4
–2.8
–1.0
10
100
1000
–10
–100
–1000
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 14. Base–Emitter Temperature
Coefficient
Figure 15. Base–Emitter Temperature
Coefficient
1k
I C , COLLECTOR CURRENT (mA)
I C , COLLECTOR CURRENT (mA)
500
TC = 25°C
1.0 MS
–1 k
–500
TC = 25°C
1.0 MS
200
100
50
1.0 s
–200
–100
–50
1.0 s
20
10
1.0
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
2.0
5.0
10
20
40
MPS6601
MPS6602
MPS6651
MPS6652
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
–1.0
–2.0
–5.0
–10
–20
–40
–20
–10
VCE, COLLECTOR–EMITTER VOLTAGE
VCE, COLLECTOR–EMITTER VOLTAGE
Figure 16. Safe Operating Area
Figure 17. Safe Operating Area
1.0
VCE , COLLECTOR VOLTAGE (VOLTS)
VCE , COLLECTOR VOLTAGE (VOLTS)
TJ = 25°C
0.8
–1.0
TJ = 25°C
–0.8
0.6
IC =
1000 mA
0.4
IC =
50 mA
IC =
100 mA
IC =
500 mA
IC =
250 mA
1.0
IB, BASE CURRENT (mA)
10
100
–0.6
IC =
–1000 mA
–0.4
IC =
–50 mA
IC =
–100 mA
IC =
–500 mA
IC =
–250 mA
–1.0
IB, BASE CURRENT (mA)
–10
–100
0.2
IC =
10 mA
0
0.01
0.1
–0.2
IC =
–10 mA
0
–0.01
–0.1
Figure 18. MPS6601/6602 Saturation Region
Figure 19. MPS6651/6652 Saturation Region
Motorola Small–Signal Transistors, FETs and Diodes Device Data
5
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