MPS4124
Amplifier Transistor
NPN Silicon
Features
•
Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating
Collector −Emitter Voltage
Collector −Base Voltage
Emitter −Base Voltage
Collector Current − Continuous
Total Device Dissipation @ T
A
= 25°C
Derate above 25°C
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
V
CE
V
CB
V
EB
I
C
P
D
P
D
T
J
, T
stg
Value
25
30
5.0
200
625
5.0
1.5
12
−55 to +150
Unit
Vdc
Vdc
Vdc
mAdc
W
mW/°C
W
mW/°C
°C
1
Symbol
R
qJA
R
qJC
Max
200
83.3
Unit
°C/W
°C/W
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COLLECTOR
3
2
BASE
1
EMITTER
TO−92
CASE 29
STYLE 1
2
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Ambient
Thermal Resistance, Junction−to−Case
3
BENT LEAD
TAPE & REEL
AMMO PACK
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
MARKING DIAGRAM
MPS
4124
AYWW
G
G
A
= Assembly Location
Y
= Year
WW = Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
MPS4124RLRA
MPS4124RLRAG
Package
TO−92
TO−92
(Pb−Free)
Shipping
†
2000/Tape & Reel
2000/Tape & Reel
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2007
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
MPS4124/D
1
April, 2007 − Rev. 4
MPS4124
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(I
C
= 1.0 mA, I
B
= 0)
Collector −Base Breakdown Voltage
(I
C
= 10
mA,
I
E
= 0)
Emitter −Base Breakdown Voltage
(I
C
= 0, I
E
= 10
mA)
Collector Cutoff Current
(V
CB
= 20 V, I
E
= 0)
Emitter Cutoff Current
(V
EB
= 3.0 V, I
C
= 0)
ON CHARACTERISTICS
DC Current Gain
(I
C
= 2.0 mA, V
CE
= 1.0 V)
(I
C
= 50 mA, V
CE
= 1.0 V)
Collector −Emitter Saturation Voltage
(I
C
= 50 mA, I
B
= 5.0 mA)
Base −Emitter Saturation Voltage
(I
C
= 50 mA, I
B
= 5.0 mA)
SMALL−SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product
(I
C
= 10 mA, V
CE
= 20 V, f = 100 MHz)
Output Capacitance
(V
CB
= 5.0 V, I
E
= 0, f = 1.0 MHz)
Input Capacitance
(V
EB
= 0.5 V, I
C
= 0, f = 1.0 MHz)
Small−Signal Current Gain
(I
C
= 2.0 mA, V
CE
= 1.0 V, f = 1.0 kHz)
Noise Figure
(I
C
= 100
mA,
V
CE
= 5.0 V, R
S
= 1.0 kW, f = 1.0 kHz)
f
T
170
C
ob
−
C
ib
−
h
fe
120
NF
−
5.0
480
dB
13.5
−
4.0
pF
−
pF
MHz
h
FE
120
60
V
CE(sat)
−
V
BE(sat)
−
0.95
0.3
Vdc
360
−
Vdc
−
V
(BR)CEO
25
V
(BR)CBO
30
V
(BR)EBO
5.0
I
CBO
−
I
EBO
−
50
50
nAdc
−
nAdc
−
Vdc
−
Vdc
Vdc
Symbol
Min
Max
Unit
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2
MPS4124
PACKAGE DIMENSIONS
TO−92 (TO−226)
CASE 29−11
ISSUE AM
A
R
P
L
SEATING
PLANE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
DIM
A
B
C
D
G
H
J
K
L
N
P
R
V
INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.021
0.045
0.055
0.095
0.105
0.015
0.020
0.500
−−−
0.250
−−−
0.080
0.105
−−−
0.100
0.115
−−−
0.135
−−−
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.407
0.533
1.15
1.39
2.42
2.66
0.39
0.50
12.70
−−−
6.35
−−−
2.04
2.66
−−−
2.54
2.93
−−−
3.43
−−−
B
STRAIGHT LEAD
BULK PACK
K
X X
G
H
V
1
D
J
C
SECTION X−X
N
N
R
A
B
BENT LEAD
TAPE & REEL
AMMO PACK
P
T
SEATING
PLANE
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. CONTOUR OF PACKAGE BEYOND
DIMENSION R IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P
AND BEYOND DIMENSION K MINIMUM.
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.40
0.54
2.40
2.80
0.39
0.50
12.70
−−−
2.04
2.66
1.50
4.00
2.93
−−−
3.43
−−−
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
K
X X
G
D
J
V
C
SECTION X−X
N
1
DIM
A
B
C
D
G
J
K
N
P
R
V
ON Semiconductor
and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
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3
MPS4124/D
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