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HB56T432D-6B: 产品描述Fast Page DRAM Module, 4MX32, 60ns, MOS; 产品类别存储存储; 文件大小82KB，共9页; 制造商Hitachi （Renesas ）; 官网地址http://www.renesas.com/eng/

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HB56T432D-6B概述

Fast Page DRAM Module, 4MX32, 60ns, MOS

HB56T432D-6B规格参数

参数名称	属性值
厂商名称	Hitachi （Renesas ）
包装说明	DIMM, DIMM72
Reach Compliance Code	unknown
ECCN代码	EAR99
Is Samacsys	N
访问模式	FAST PAGE
最长访问时间	60 ns
其他特性	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
备用内存宽度	16
I/O 类型	COMMON
JESD-30 代码	R-XZMA-N72
内存密度	134217728 bit
内存集成电路类型	FAST PAGE DRAM MODULE
内存宽度	32
功能数量	1
端口数量	1
端子数量	72
字数	4194304 words
字数代码	4000000
工作模式	ASYNCHRONOUS
最高工作温度	70 °C
最低工作温度
组织	4MX32
输出特性	3-STATE
封装主体材料	UNSPECIFIED
封装代码	DIMM
封装等效代码	DIMM72
封装形状	RECTANGULAR
封装形式	MICROELECTRONIC ASSEMBLY
电源	5 V
认证状态	Not Qualified
刷新周期	4096
座面最大高度	25.4 mm
自我刷新	NO
最大待机电流	0.008 A
最大压摆率	0.64 mA
最大供电电压 (Vsup)	5.25 V
最小供电电压 (Vsup)	4.75 V
标称供电电压 (Vsup)	5 V
表面贴装	NO
技术	MOS
温度等级	COMMERCIAL
端子形式	NO LEAD
端子节距	1.27 mm
端子位置	ZIG-ZAG
Base Number Matches	1

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HB56T432D Series

4,194,304-word

32-bit High Density Dynamic RAM Module

ADE-203-

Rev. 0.0

Dec. 1, 1995

Description

The HB56T432D is a 4 M

32 dynamic RAM Small Outline DIMM (S.O.DIMM), mounted 8 pieces of 16-

Mbit DRAM (HM5116400BTS/ BLTS) sealed in TSOP package. An outline of the HB56T432D is 72-pin

Zig Zag Dual tabs socket type compact and thin package. Therefore, the HB56T432D makes high density

mounting possible without surface mount technology. The HB56T432D provides common data inputs and

outputs. Decoupling capacitors are mounted beside the each TSOP of its module board.

Features

•

72-pin

— Lead pitch: 1.27 mm

Single 5 V (± 5%) supply

High speed

— Access time: 60 ns/70 ns/80 ns (max)

Low power dissipation

— Active mode: 3.36 W/2.94 W/2.73 W

— Standby mode: 84 mW (max)

6.3 mW (max) (L-version)

Fast page mode capability

4,096 refresh cycle: 64 ms

128 ms (L-version)

3 variations of refresh

—

RAS-only

refresh

—

CAS-before-RAS

refresh

— Hidden refresh

TTL compatible

Test function

•

HB56T432D-6B相似产品对比

	HB56T432D-6B	HB56T432D-7BL	HB56T432D-7B	HB56T432D-6BL	HB56T432D-8BL	HB56T432D-8B
描述	Fast Page DRAM Module, 4MX32, 60ns, MOS	Fast Page DRAM Module, 4MX32, 70ns, MOS	Fast Page DRAM Module, 4MX32, 70ns, MOS	Fast Page DRAM Module, 4MX32, 60ns, MOS	Fast Page DRAM Module, 4MX32, 80ns, MOS	Fast Page DRAM Module, 4MX32, 80ns, MOS
包装说明	DIMM, DIMM72	DIMM, DIMM72	DIMM, DIMM72	DIMM, DIMM72	DIMM, DIMM72	DIMM, DIMM72
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown
ECCN代码	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
访问模式	FAST PAGE	FAST PAGE	FAST PAGE	FAST PAGE	FAST PAGE	FAST PAGE
最长访问时间	60 ns	70 ns	70 ns	60 ns	80 ns	80 ns
其他特性	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
备用内存宽度	16	16	16	16	16	16
I/O 类型	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON
JESD-30 代码	R-XZMA-N72	R-XZMA-N72	R-XZMA-N72	R-XZMA-N72	R-XZMA-N72	R-XZMA-N72
内存密度	134217728 bit	134217728 bit	134217728 bit	134217728 bit	134217728 bit	134217728 bit
内存集成电路类型	FAST PAGE DRAM MODULE	FAST PAGE DRAM MODULE	FAST PAGE DRAM MODULE	FAST PAGE DRAM MODULE	FAST PAGE DRAM MODULE	FAST PAGE DRAM MODULE
内存宽度	32	32	32	32	32	32
功能数量	1	1	1	1	1	1
端口数量	1	1	1	1	1	1
端子数量	72	72	72	72	72	72
字数	4194304 words	4194304 words	4194304 words	4194304 words	4194304 words	4194304 words
字数代码	4000000	4000000	4000000	4000000	4000000	4000000
工作模式	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
最高工作温度	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C
组织	4MX32	4MX32	4MX32	4MX32	4MX32	4MX32
输出特性	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
封装主体材料	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
封装代码	DIMM	DIMM	DIMM	DIMM	DIMM	DIMM
封装等效代码	DIMM72	DIMM72	DIMM72	DIMM72	DIMM72	DIMM72
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY
电源	5 V	5 V	5 V	5 V	5 V	5 V
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
刷新周期	4096	4096	4096	4096	4096	4096
座面最大高度	25.4 mm	25.4 mm	25.4 mm	25.4 mm	25.4 mm	25.4 mm
自我刷新	NO	NO	NO	NO	NO	NO
最大待机电流	0.008 A	0.0012 A	0.008 A	0.0012 A	0.0012 A	0.008 A
最大压摆率	0.64 mA	0.56 mA	0.56 mA	0.64 mA	0.52 mA	0.52 mA
最大供电电压 (Vsup)	5.25 V	5.25 V	5.25 V	5.25 V	5.25 V	5.25 V
最小供电电压 (Vsup)	4.75 V	4.75 V	4.75 V	4.75 V	4.75 V	4.75 V
标称供电电压 (Vsup)	5 V	5 V	5 V	5 V	5 V	5 V
表面贴装	NO	NO	NO	NO	NO	NO
技术	MOS	MOS	MOS	MOS	MOS	MOS
温度等级	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
端子形式	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD
端子节距	1.27 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm
端子位置	ZIG-ZAG	ZIG-ZAG	ZIG-ZAG	ZIG-ZAG	ZIG-ZAG	ZIG-ZAG
厂商名称	Hitachi （Renesas ）	-	Hitachi （Renesas ）	Hitachi （Renesas ）	Hitachi （Renesas ）	Hitachi （Renesas ）

HB56T432D-6B

HB56T432D-6B概述

HB56T432D-6B规格参数

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HB56T432D-6B相似产品对比

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