PTFA091503EL
Thermally-Enhanced High Power RF LDMOS FET
150 W, 920 – 960 MHz
Description
The PTFA091503EL is a 150-watt, internally-matched FET intended
for use in power amplifier applications in the 920 to 960 MHz band.
This device features internal I/O matching and thermally-enhanced
open cavity ceramic package. Manufactured with Infineon's advanced
LDMOS process, this device provides excellent thermal performance
and superior reliability.
PTFA091503EL
Package H-33288-6
Features
V
DD
= 30 V, I
DQ
= 1250 mA, ƒ = 960 MHz, 3GPP
WCDMA signal, PAR = 8 dB, 10 MHz carrier
spacing, 3.84MHz Bandwidth
60
50
-30
Two-carrier WCDMA Performance
• Broadband internal matching
• Typical two-carrier WCDMA performance at
960 MHz, 30 V
- Average output power = 32 W
- Linear Gain = 17 dB
- Efficiency = 29%
- Intermodulation distortion = –37 dBc
- Adjacent channel power = –39 dBc
• Typical CW performance, 960 MHz, 30 V
- Output power at P
1dB
= 150 W
- Linear Gain = 17 dB
- Efficiency = 54%
• Integrated ESD protection: Human Body Model,
Class 2 (minimum)
• Excellent thermal stability, low HCI drift
• Capable of handling 10:1 VSWR @ 30 V,
150 W (CW) output power
• Pb-free, RoHS-compliant
ACPR
Drain Efficiency (%)
40
30
20
10
0
30
IMD
Efficiency
Gain
-40
-45
-50
-55
-60
35
40
45
50
Output Power (dBm)
RF Characteristics
Two-carrier WCDMA Measurements
(not subject to production test—verified by design/characterization in Infineon test
fixture)
V
DD
= 30 V, I
DQ
= 1250 mA, P
OUT
= 32 W average
ƒ
1
= 950 MHz, ƒ
2
= 960 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 8 dB @ 0.01% CCDF
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
IMD (dBc) , ACPR (dBc)
-35
Symbol
G
ps
Min
—
—
—
Typ
17
29
–37
Max
—
—
—
Unit
dB
%
dBc
h
D
IMD
All published data at T
CASE
= 25°C unless otherwise indicated
ESD:
Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 11
Rev. 04, 2016-06-16
PTFA091503EL
RF Characteristics
(cont.)
Two-tone Measurements
(tested in Infineon test fixture)
V
DD
= 30 V, I
DQ
= 1250 mA, P
OUT
= 140 W PEP, ƒ = 960 MHz, tone spacing = 1 MHz
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
Symbol
Gps
Min
16
40
—
Typ
17
42
–30
Max
—
—
–28
Unit
dB
%
dBc
h
D
IMD
DC Characteristics
Characteristic
Drain-Source Breakdown Voltage
Drain Leakage Current
Conditions
V
GS
= 0 V, I
DS
= 10 mA
V
DS
= 28 V, V
GS
= 0 V
V
DS
= 63 V, V
GS
= 0 V
Symbol
V
(BR)DSS
I
DSS
I
DSS
R
DS(on)
V
GS
I
GSS
Min
65
—
—
—
2.0
—
Typ
—
—
—
0.07
2.5
—
Max
—
1.0
10.0
—
3.0
1.0
Unit
V
µA
µA
W
V
µA
On-State Resistance
Operating Gate Voltage
Gate Leakage Current
V
GS
= 10 V, V
DS
= 0.1 V
V
DS
= 30 V, I
DQ
= 1250 mA
V
GS
= 10 V, V
DS
= 0 V
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Junction Temperature
Storage Temperature Range
Thermal Resistance (T
CASE
= 70 °C, 150 W CW)
Symbol
V
DSS
V
GS
T
J
T
STG
R
qJC
Value
65
–0.5 to +12
200
–40 to +150
0.42
Unit
V
V
°C
°C
°C/W
Ordering Information
Type and Version
PTFA091503EL V4 R0
PTFA091503EL V4 R250
Order Code
PTFA091503ELV4R0XTMA1
PTFA091503ELV4R250XTMA1
Package and Description
H-33288-6, bolt-down
H-33288-6, bolt-down
Shipping
Tape & Reel, 50 pcs
Tape & Reel, 250 pcs
Data Sheet
2 of 11
Rev. 04, 2016-06-16
stm32/stm8
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