PTF082001E
PTF082001F
Thermally-Enhanced High Power RF LDMOS FETs
200 W, 860 – 900 MHz
Description
The PTF082001E and PTF082001F are 200-watt, internally-matched
GOLDMOS
FETs intended for CDMA and CDMA 2000 applications in the
860 to 900 MHz band. Thermally-enhanced packaging provides the coolest
operation available. Full gold metallization ensures excellent device life-
time and reliability.
PTF082001E
Package 30260
PTF082001F*
Package 31260
3-Carrier CDMA 2000 Performance
V
DD
= 28 V, I
DQ
= 1150 mA, f = 900 MHz
T
CASE
= 25°C
T
CASE
= 90°C
ACPR Fc ± 2.5 MHz
-45
ACPR Fc ± 2.135 MHz
-50
-55
-60
-65
-70
36
38
40
42
44
46
48
50
ALT Fc ± 3.23 MHz
Features
•
•
•
Thermally-enhanced packaging
Broadband internal matching
Typical CDMA IS-95 performance
- Average output power = 40 W
- Gain = 18 dB
- Efficiency = 27%
Typical CW performance
- Output power at P–1dB = 215 W
- Gain = 17 dB
- Efficiency = 55%
Integrated ESD protection: Human Body
Model, Class 1 (minimum)
Excellent thermal stability
Low HCI Drift
Capable of handling 10:1 VSWR @ 28 V,
200 W output power
-40
Adj. Ch. Power Ratio (dBc)
•
•
•
•
•
Output Power (dBm), Avg.
ESD:
Electrostatic discharge sensitive device—observe handling
precautions!
RF Characteristics
at T
CASE
= 25°C unless otherwise indicated
CDMA IS-95 Measurements
(not subject to production test—verified by design/characterization in Infineon test fixture)
V
DD
= 28 V, I
DQ
= 1150 mA, P
OUT
= 40 W, f = 860 MHz
Characteristic
ACPR@ 750 KHz
ACPR@ 1.98 MHz
Gain
Drain Efficiency
*See Infineon distributor for future availability.
Data Sheet
1 of 10
Symbol
ACPR
ACPR
G
ps
Min
—
—
—
—
Typ
–45
–62
18
27
Max
—
—
—
—
Unit
dBc
dBc
dB
%
η
D
2004-10-15
PTF082001E
PTF082001F
RF Characteristics
(cont.)
Two-Tone Measurements
(in Infineon test fixture)
V
DD
= 28 V, I
DQ
= 1150 mA, P
OUT
= 190 W PEP, f
C
= 900 MHz, tone spacing = 1 MHz
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
Symbol
G
ps
Min
17
40
—
Typ
18
43
—
Max
—
—
–28
Unit
dB
%
dBc
η
D
IMD
DC Characteristics
at T
CASE
= 25°C unless otherwise indicated
Characteristic
Drain-Source Breakdown Voltage
Drain Leakage Current
On-State Resistance
Operating Gate Voltage
Gate Leakage Current
Conditions
V
GS
= 0 V, I
DS
= 10 µA
V
DS
= 28 V, V
GS
= 0 V
V
GS
= 10 V, V
DS
= 0.1 V
V
DS
= 28 V, I
DQ
= 1150 mA
V
GS
= 10 V, V
DS
= 0 V
Symbol
V
(BR)DSS
I
DSS
R
DS(on)
V
GS
I
GSS
Min
65
—
—
2.5
—
Typ
—
—
0.1
2.9
0.01
Max
—
1.0
—
4
1.0
Unit
V
µA
Ω
V
µA
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Junction Temperature
Total Device Dissipation
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (T
CASE
= 70°C, 200 W CW)
T
STG
R
θJC
Symbol
V
DSS
V
GS
T
J
P
D
Value
65
–0.5 to +12
200
603
3.45
–40 to +150
0.29
Unit
V
V
°C
W
W/°C
°C
°C/W
Ordering Information
Type
PTF082001E
PTF082001F*
Package Outline
30260
31260
Package Description
Thermally-enhanced slotted flange, single-ended
Thermally-enhanced earless flange, single-ended
Marking
PTF082001E
PTF082001F
*See Infineon distributor for future availability.
Data Sheet
2 of 10
2004-10-15
PTF082001E
PTF082001F
Typical Performance
(measured
in Infineon test fixture)
IS-95 CDMA Performance
V
DD
= 28 V, I
DQ
= 1150 mA, f = 860 MHz
40
35
T
CASE
= 25°C
T
CASE
= 90°C
Efficiency
-10
0
Intermodulation Distortion vs. Output Power
(as measured in a broadband circuit)
V
DD
= 28 V, I
DQ
= 1150 mA, f
1
= 899 MHz, f
2
= 900 MHz
Adj. Ch. Power Ratio (dBc)
-20
-30
-10
-20
3rd Order
Drain Efficiency (%)
30
25
20
15
10
ACPR F
C
+ 1.98 MHz
5
36
38
40
42
44
46
48
50
ACP F
C
– 0.75 MHz
-40
-50
-60
-70
-80
IMD (dBc)
-30
-40
-50
-60
-70
-80
40 41 42 43 44 45 46 47 48 49 50 51
7th
5th
Output Power (dBm), Avg.
Output Power (dBm), PEP
IM3 vs. Output Power at Selected Biases
V
DD
= 28 V, f
1
= 899, f
2
= 900 MHz
-20
Broadband Performance
V
DD
= 28 V, I
DQ
= 1150 mA, P
OUT
= 50 W
20
19
0
-4
-8
Return Loss
17
16
-12
-16
-20
900
IMD (dBc)
Gain (dB)
I
DQ
= 1150 mA
-40
18
-50
I
DQ
= 575 mA
I
DQ
= 1725 mA
-60
36
38
40
42
44
46
48
50
52
15
860
870
880
890
Output Power (dBm), PEP
Frequency (MHz)
All published data at T
CASE
= 25°C unless otherwise indicated.
Data Sheet
3 of 10
2004-10-15
Return Loss (dB)
-30
Gain
PTF082001E
PTF082001F
Typical Performance
(cont.)
Power Sweep
V
DD
= 28 V, f = 900 MHz
19.0
18.5
Gain & Efficiency vs. Output Power
V
DD
= 28 V, I
DQ
= 1150 mA, f = 900 MHz
21
20
70
60
50
Gain
40
30
20
Efficiency
40
43
45
48
50
53
55
10
0
18.0
17.5
17.0
16.5
16.0
40
I
DQ
= 1725 mA
19
I
DQ
= 1150 mA
18
17
16
I
DQ
= 575 mA
15
14
42
44
46
48
50
52
54
Output Power (dBm)
Output Power (dBm)
Output Power
(P–1dB)
vs. Supply Voltage
I
DQ
= 1150 mA, f = 900 MHz
55.0
54.5
Bias Voltage vs. Temperature
Voltage normalized to 1.0 V. Series show current.
1.03
1.02
0.75 A
1.50 A
2.25 A
Output Power (dBm)
Bias Voltage (V)
54.0
53.5
53.0
52.5
52.0
51.5
51.0
24
26
28
30
32
1.01
1.00
0.99
0.98
0.97
0.96
-20
0
20
40
60
80
100
3.00 A
3.75 A
4.50 A
Supply Voltage (V)
Case Temperature (ºC)
Data Sheet
4 of 10
2004-10-15
Drain Efficiency (%)
Power Gain (dB)
Gain (dB)
PTF082001E
PTF082001F
Broadband Circuit Impedance
RD
G
E
NE
RA
T
OR
-
D
Z Source
Z Load
S
-
W
AV
E
LE
NGTH
Z Load
0
.0
D
L
OA
D
-
S
T
OW
AR
NGT
H
EL
E
0.1
MHz
860
870
880
890
900
920
960
R
2.92
2.93
2.93
2.96
2.94
2.95
2.96
jX
–1.25
–1.04
–0.86
–0.65
–0.54
–0.20
0.44
R
1.49
1.49
1.49
1.47
1.47
1.49
1.46
jX
1.25
1.36
1.48
1.61
1.68
1.88
2.25
Z Source
960 MHz
900 MHz
860 MHz
0. 1
See next page for Reference Circuit information.
Data Sheet
5 of 10
A
--
W
V
2004-10-15
0.2
Frequency
Z Source
Ω
Z Load
Ω
0. 1
G
S T
OW
A
0. 2
Z
0
= 50
Ω
960 MHz
900 MHz
860 MHz
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