5.3 KV, TRIOS
, Low Current
Phototransistor Optocoupler
FEATURES
• Very High CTR at
I
F
=1.0 mA,
V
CE
=0.5 V
– SFH608-2, 63-125%
– SFH608-3, 100-200%
– SFH608-4, 160-320%
– SFH608-5, 250-500%
• Specified Minimum CTR at
I
F
=0.5 mA,
V
CE
=1.5 V:
≥
32% (typ. 120%)
• Good CTR Linearity with Forward Current
• Low CTR Degradation
• High Collector-Emitter Voltage
V
CEO
=55 V
• Isolation Test Voltage: 5300 V
RMS
• Low Current Input
• Low Coupling Capacitance
• High Common Mode Transient Immunity
• Phototransistor Optocoupler in 6 Pin DIP
Package
• Field Effect Stable by TRIOS (TRansparent IOn
Shield)
V
•
VDE 0884 Available with Option 1
• Underwriters Lab File #E52744
D E
SFH608
Dimensions in inches (mm)
3
.248 (6.30)
.256 (6.50)
4
5
6
2
1
pin one ID
Anode 1
Cathode 2
NC 3
6
5
4
Base
Collector
Emitter
.335 (8.50)
.343 (8.70)
.039
(1.00)
Min.
4°
typ.
.018 (0.45)
.022 (0.55)
.048 (0.45)
.022 (0.55)
.130 (3.30)
.150 (3.81)
18°
.031 (0.80) min.
.031 (0.80)
.035 (0.90)
.100 (2.54) typ.
3°–9°
.010 (.25)
typ.
.300–.347
(7.62–8.81)
.114 (2.90)
.130 (3.0)
.300 (7.62)
typ.
APPLICATIONS
• Telecommunications
• Industrial Controls
• Office Machines
• Microprocessor System Interfaces
DESCRIPTION
The SFH 608 is an optocoupler designed for high
current transfer ratio at low input currents with the
output transistor saturated. This makes the device
ideal for low current switching applications. The
SFH608 is packaged in a six pin plastic DIP.
Maximum Ratings
(
T
A
=25
°
C)
Emitter
Reverse Voltage ................................................................................... 6.0 V
DC Forward Current ...........................................................................50 mA
Surge Forward Current (tp
≤
10
µ
s) .......................................................2.5 A
Total Power Dissipation .................................................................... 70 mW
Detector
Collector-Emitter Voltage ...................................................................... 55 V
Collector-Base Voltage.......................................................................... 55 V
Emitter-Base Voltage ........................................................................... 7.0 V
Collector Current ............................................................................... 50 mA
Surge Collector Current (tp
≤
1.0 ms) ................................................100 mA
Total Power Dissipation .................................................................. 150 mW
Isolation Test Voltage (between emitter and detector, refer
to climate DIN 40046 part 2 Nov. 74) (t=1.0 s)........................ 5300 V
RMS
Creepage ......................................................................................
≥
7.0 mm
Clearance......................................................................................
≥
7.0 mm
Comparative Tracking Index
per DIN IEC 112/VDE 0303, part1 ...................................................... 175
Isolation Resistance
V
IO
=500 V,
T
A
=25
°
C ....................................................................
≥
10
12
Ω
V
IO
=500 V,
T
A
=100
°
C .................................................................
≥
10
11
Ω
Storage Temperature Range ............................................. –55
°
C to +150
°
C
Operating Temperature Range ......................................... –55
°
C to +100
°
C
Junction Temperature......................................................................... 100
°
C
Soldering Temperature (max. 10 s, dip soldering:
distance to seating plane
≥
1.5 mm)................................................ 260
°
C
2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
2–225
March 11, 2000-22
Figure 5. Diode Forward Voltage (typ.)
T
A
=25°C,
V
F
=f(I
F
)
Figure 8. Output cHaracteristics (typ.)
T
A
=25°C,
I
CE
=f(V
CE
,
I
F
)
Figure 11. Transistor Capacitance
(typ.)
T
A
=25°C, f=1.0 MHz,
C
CE
=f(V
CE
)
C
CB
=f (V
CB
),
C
EB
=f(V
EB
)
Figure 6. Diode Forward Voltage (typ.)
I
F
=1.0 mA,
V
F
=f(T
A
)
Figure 9. Permissible Forward Cur-
rent Diode
I
F
=f(T
A
)
Figure 12. Collector-emitter Leakage
Current
I
F
=0,
V
CE
=10 V,
I
CEO
=f(T
A
)
Figure 7. Output Characteristics (typ.)
T
A
=25°C,
I
CE
=f(V
CE
,
I
B
)
Figure 10. Permissible Power Dissipa-
tion
P
tot
=f(T
A
)
2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
2–227
SFH608
March 11, 2000-22
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