VISHAY
1N4448W
Vishay Semiconductors
Small Signal Fast Switching Diode
Features
• Silicon Epitaxial Planar Diode
• Fast switching diode.
• This diode is also available in other case styles
including the DO-35 case with the type designa-
tion 1N4448, the MiniMELF case with the type
designation LL4448, and the SOT-23 case with
the type designation IMBD4448.
17431
Mechanical Data
Case:
SOD-123 Plastic Case
Weight:
approx. 9.3 mg
Packaging Codes/Options:
GS18 / 10 k per 13" reel (8 mm tape), 10 k/box
GS08 / 3 k per 7" reel (8 mm tape), 15 k/box
Parts Table
Part
1N4448W
Ordering code
1N4448W-GS18 or 1N4448W-GS08
A3
Marking
Remarks
Tape and Reel
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Reverse voltage
Peak reverse voltage
Average rectified current half
wave rectification with resistive
load
Surge current
Power dissipation
1) Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature.
Test condition
Symbol
V
R
V
RM
Value
75
100
150
1)
Unit
V
V
mA
f
≥
50 Hz
I
F(AV)
t < 1 s and T
j
= 25 °C
I
FSM
P
tot
500
500
1)
mA
mW
Document Number 85722
Rev. 1.3, 14-May-04
www.vishay.com
1
1N4448W
Vishay Semiconductors
Thermal Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Thermal resistance junction to
ambient air
Junction temperature
Storage temperature
1) Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature.
VISHAY
Test condition
Symbol
R
thJA
T
j
T
S
Value
350
1)
Unit
°C/W
°C
°C
175
- 65 to + 175
Electrical Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Forward voltage
Leakage current
Test condition
I
F
= 5 mA
I
F
= 100 mA
V
R
= 20 V
V
R
= 75 V
V
R
= 20 V, T
J
= 150 °C
Capacitance
Reverse recovery time
Rectification efficiency
V
F
= V
R
= 0 V
I
F
= 10 mA to I
R
= 10 mA,
V
R
= 6 V, R
L
= 100
Ω
f = 100 MHz, V
RF
= 2 V
t
rr
η
½
0.45
Symbol
V
F
V
F
I
R
I
R
I
R
Min
0.62
Typ.
Max
0.72
1
25
5
50
4
4
Unit
V
V
nA
µA
µA
pF
ns
Rectification Efficieny Measurement
Circuit
60
Ω
V
RF
= 2 V
2 nF
5 kΩ
V
O
17436
www.vishay.com
2
Document Number 85722
Rev. 1.3, 14-May-04
VISHAY
Ozone Depleting Substances Policy Statement
It is the policy of
Vishay Semiconductor GmbH
to
1. Meet all present and future national and international statutory requirements.
1N4448W
Vishay Semiconductors
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH
has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH
can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 85722
Rev. 1.3, 14-May-04
www.vishay.com
5
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