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HN1A01F-GR(5LMAA,F

产品描述Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon
产品类别分立半导体    晶体管   
文件大小228KB,共4页
制造商Toshiba(东芝)
官网地址http://toshiba-semicon-storage.com/
下载文档 详细参数 选型对比 全文预览

HN1A01F-GR(5LMAA,F概述

Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon

HN1A01F-GR(5LMAA,F规格参数

参数名称属性值
厂商名称Toshiba(东芝)
包装说明SMALL OUTLINE, R-PDSO-G6
Reach Compliance Codeunknown
Is SamacsysN
最大集电极电流 (IC)0.15 A
集电极-发射极最大电压50 V
配置SEPARATE, 2 ELEMENTS
最小直流电流增益 (hFE)200
JESD-30 代码R-PDSO-G6
元件数量2
端子数量6
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
极性/信道类型PNP
表面贴装YES
端子形式GULL WING
端子位置DUAL
晶体管应用AMPLIFIER
晶体管元件材料SILICON
标称过渡频率 (fT)80 MHz
Base Number Matches1

文档预览

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HN1A01F
TOSHIBA Transistor Silicon PNP
Epitaxial
Type (PCT Process)
HN1A01F
Audio-Frequency General-Purpose Amplifier
Applications
Small package (dual type)
High voltage and high current
: V
CEO
=
−50
V, I
C
=
−150
mA (max)
High h
FE
: h
FE
= 120 to 400
Excellent h
FE
linearity
: h
FE
(I
C
=
−0.1
mA) / h
FE
(I
C
=
−2
mA) = 0.95 (typ.)
Unit: mm
(Q1, Q2 Common)
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
*
T
j
T
stg
Rating
−50
−50
−5
−150
−30
300
125
−55
to 125
Unit
V
V
V
mA
mA
mW
°C
°C
JEDEC
JEITA
TOSHIBA
2-3N1A
Weight: 0.015 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
* Total rating
Electrical Characteristics
(Ta = 25°C) (Q1, Q2 Common)
Characteristic
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
I
EBO
h
FE (note)
V
CE (sat)
f
T
C
ob
Test
Circuit
Test Condition
V
CB
=
−50
V, I
E
= 0
V
EB
=
−5
V, I
C
= 0
V
CE
=
−6
V, I
C
=
−2
mA
I
C
=
−100
mA, I
B
=
−10
mA
V
CE
=
−10
V, I
C
=
−1
mA
V
CB
=
−10
V, I
E
= 0, f = 1 MHz
Min
120
80
Typ.
−0.1
4
Max
−0.1
−0.1
400
−0.3
7
Unit
μA
μA
V
MHz
pF
Note: hFE Classification
Y (Y): 120 to 240, GR (G): 200 to 400
( ) Marking Symbol
Start of commercial production
1988-11
1
2014-03-01

HN1A01F-GR(5LMAA,F相似产品对比

HN1A01F-GR(5LMAA,F HN1A01F-Y(TE85L,F) HN1A01F-GR(TE85L,F HN1A01F-GR HN1A01F-GR(TE85L,F) HN1A01F-Y HN1A01F-Y(T5LMAA,F
描述 Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon TRANS 2PNP 50V 0.15A SM6 TRANS 2PNP 50V 0.15A SM6 TRANSISTOR 150 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-3N1A, 6 PIN, BIP General Purpose Small Signal Small Signal Bipolar Transistor TRANSISTOR 150 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-3N1A, 6 PIN, BIP General Purpose Small Signal Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon
厂商名称 Toshiba(东芝) - - Toshiba(东芝) Toshiba(东芝) Toshiba(东芝) Toshiba(东芝)
包装说明 SMALL OUTLINE, R-PDSO-G6 - - SMALL OUTLINE, R-PDSO-G6 , SMALL OUTLINE, R-PDSO-G6 SMALL OUTLINE, R-PDSO-G6
Reach Compliance Code unknown - - unknown unknown unknown unknown
Is Samacsys N - - N N N N
最大集电极电流 (IC) 0.15 A - - 0.15 A - 0.15 A 0.15 A
集电极-发射极最大电压 50 V - - 50 V - 50 V 50 V
配置 SEPARATE, 2 ELEMENTS - - SEPARATE, 2 ELEMENTS - SEPARATE, 2 ELEMENTS SEPARATE, 2 ELEMENTS
最小直流电流增益 (hFE) 200 - - 200 - 120 120
JESD-30 代码 R-PDSO-G6 - - R-PDSO-G6 - R-PDSO-G6 R-PDSO-G6
元件数量 2 - - 2 - 2 2
端子数量 6 - - 6 - 6 6
封装主体材料 PLASTIC/EPOXY - - PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR - - RECTANGULAR - RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE - - SMALL OUTLINE - SMALL OUTLINE SMALL OUTLINE
极性/信道类型 PNP - - PNP - PNP PNP
表面贴装 YES - - YES - YES YES
端子形式 GULL WING - - GULL WING - GULL WING GULL WING
端子位置 DUAL - - DUAL - DUAL DUAL
晶体管应用 AMPLIFIER - - AMPLIFIER - AMPLIFIER AMPLIFIER
晶体管元件材料 SILICON - - SILICON - SILICON SILICON
标称过渡频率 (fT) 80 MHz - - 80 MHz - 80 MHz 80 MHz
Base Number Matches 1 - - 1 1 1 1

 
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