Dual-Port SRAM, 512KX18, 15ns, PBGA256, BGA-256
参数名称 | 属性值 |
是否无铅 | 不含铅 |
是否Rohs认证 | 符合 |
厂商名称 | IDT (Integrated Device Technology) |
零件包装代码 | BGA |
包装说明 | LBGA, |
针数 | 256 |
Reach Compliance Code | compliant |
ECCN代码 | 3A991.B.2.A |
Is Samacsys | N |
最长访问时间 | 15 ns |
其他特性 | FLOW-THROUGH OR PIPELINED ARCHITECTURE |
JESD-30 代码 | S-PBGA-B256 |
JESD-609代码 | e1 |
长度 | 17 mm |
内存密度 | 9437184 bit |
内存集成电路类型 | DUAL-PORT SRAM |
内存宽度 | 18 |
湿度敏感等级 | 3 |
功能数量 | 1 |
端子数量 | 256 |
字数 | 524288 words |
字数代码 | 512000 |
工作模式 | SYNCHRONOUS |
最高工作温度 | 70 °C |
最低工作温度 | |
组织 | 512KX18 |
封装主体材料 | PLASTIC/EPOXY |
封装代码 | LBGA |
封装形状 | SQUARE |
封装形式 | GRID ARRAY, LOW PROFILE |
并行/串行 | PARALLEL |
峰值回流温度(摄氏度) | 260 |
认证状态 | Not Qualified |
座面最大高度 | 1.5 mm |
最大供电电压 (Vsup) | 3.45 V |
最小供电电压 (Vsup) | 3.15 V |
标称供电电压 (Vsup) | 3.3 V |
表面贴装 | YES |
技术 | CMOS |
温度等级 | COMMERCIAL |
端子面层 | Tin/Silver/Copper (Sn/Ag/Cu) |
端子形式 | BALL |
端子节距 | 1 mm |
端子位置 | BOTTOM |
处于峰值回流温度下的最长时间 | 30 |
宽度 | 17 mm |
Base Number Matches | 1 |
IDT70V7339S133BCG8 | IDT70V7339S200BCG8 | IDT70V7339S133BCGI8 | IDT70V7339S133BFG8 | IDT70V7339S166BCG8 | IDT70V7339S133BFGI8 | IDT70V7339S166BCGI8 | |
---|---|---|---|---|---|---|---|
描述 | Dual-Port SRAM, 512KX18, 15ns, PBGA256, BGA-256 | Dual-Port SRAM, 512KX18, 10ns, PBGA256, BGA-256 | Dual-Port SRAM, 512KX18, 15ns, PBGA256, BGA-256 | Dual-Port SRAM, 512KX18, 15ns, PBGA208, FBGA-208 | Dual-Port SRAM, 512KX18, 12ns, PBGA256, BGA-256 | Dual-Port SRAM, 512KX18, 15ns, PBGA208, FBGA-208 | Dual-Port SRAM, 512KX18, 12ns, PBGA256, BGA-256 |
是否无铅 | 不含铅 | 不含铅 | 不含铅 | 不含铅 | 不含铅 | 不含铅 | 不含铅 |
是否Rohs认证 | 符合 | 符合 | 符合 | 符合 | 符合 | 符合 | 符合 |
厂商名称 | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) |
零件包装代码 | BGA | BGA | BGA | BGA | BGA | BGA | BGA |
包装说明 | LBGA, | BGA-256 | LBGA, | TFBGA, | LBGA, | TFBGA, | LBGA, |
针数 | 256 | 256 | 256 | 208 | 256 | 208 | 256 |
Reach Compliance Code | compliant | compliant | compliant | compliant | compliant | compliant | compliant |
ECCN代码 | 3A991.B.2.A | 3A991.B.2.A | 3A991.B.2.A | 3A991.B.2.A | 3A991.B.2.A | 3A991.B.2.A | 3A991.B.2.A |
最长访问时间 | 15 ns | 10 ns | 15 ns | 15 ns | 12 ns | 15 ns | 12 ns |
其他特性 | FLOW-THROUGH OR PIPELINED ARCHITECTURE | FLOW-THROUGH OR PIPELINED ARCHITECTURE | FLOW-THROUGH OR PIPELINED ARCHITECTURE | FLOW-THROUGH OR PIPELINED ARCHITECTURE | FLOW-THROUGH OR PIPELINED ARCHITECTURE | FLOW-THROUGH OR PIPELINED ARCHITECTURE | FLOW-THROUGH OR PIPELINED ARCHITECTURE |
JESD-30 代码 | S-PBGA-B256 | S-PBGA-B256 | S-PBGA-B256 | S-PBGA-B208 | S-PBGA-B256 | S-PBGA-B208 | S-PBGA-B256 |
JESD-609代码 | e1 | e1 | e1 | e1 | e1 | e1 | e1 |
长度 | 17 mm | 17 mm | 17 mm | 15 mm | 17 mm | 15 mm | 17 mm |
内存密度 | 9437184 bit | 9437184 bit | 9437184 bit | 9437184 bit | 9437184 bit | 9437184 bit | 9437184 bit |
内存集成电路类型 | DUAL-PORT SRAM | DUAL-PORT SRAM | DUAL-PORT SRAM | DUAL-PORT SRAM | DUAL-PORT SRAM | DUAL-PORT SRAM | DUAL-PORT SRAM |
内存宽度 | 18 | 18 | 18 | 18 | 18 | 18 | 18 |
湿度敏感等级 | 3 | 3 | 3 | 3 | 3 | 3 | 3 |
功能数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
端子数量 | 256 | 256 | 256 | 208 | 256 | 208 | 256 |
字数 | 524288 words | 524288 words | 524288 words | 524288 words | 524288 words | 524288 words | 524288 words |
字数代码 | 512000 | 512000 | 512000 | 512000 | 512000 | 512000 | 512000 |
工作模式 | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS |
最高工作温度 | 70 °C | 70 °C | 85 °C | 70 °C | 70 °C | 85 °C | 85 °C |
组织 | 512KX18 | 512KX18 | 512KX18 | 512KX18 | 512KX18 | 512KX18 | 512KX18 |
封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
封装代码 | LBGA | LBGA | LBGA | TFBGA | LBGA | TFBGA | LBGA |
封装形状 | SQUARE | SQUARE | SQUARE | SQUARE | SQUARE | SQUARE | SQUARE |
封装形式 | GRID ARRAY, LOW PROFILE | GRID ARRAY, LOW PROFILE | GRID ARRAY, LOW PROFILE | GRID ARRAY, THIN PROFILE, FINE PITCH | GRID ARRAY, LOW PROFILE | GRID ARRAY, THIN PROFILE, FINE PITCH | GRID ARRAY, LOW PROFILE |
并行/串行 | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL |
峰值回流温度(摄氏度) | 260 | 260 | 260 | 260 | 260 | 260 | 260 |
认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
座面最大高度 | 1.5 mm | 1.5 mm | 1.5 mm | 1.2 mm | 1.5 mm | 1.2 mm | 1.5 mm |
最大供电电压 (Vsup) | 3.45 V | 3.45 V | 3.45 V | 3.45 V | 3.45 V | 3.45 V | 3.45 V |
最小供电电压 (Vsup) | 3.15 V | 3.15 V | 3.15 V | 3.15 V | 3.15 V | 3.15 V | 3.15 V |
标称供电电压 (Vsup) | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V |
表面贴装 | YES | YES | YES | YES | YES | YES | YES |
技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
温度等级 | COMMERCIAL | COMMERCIAL | INDUSTRIAL | COMMERCIAL | COMMERCIAL | INDUSTRIAL | INDUSTRIAL |
端子面层 | Tin/Silver/Copper (Sn/Ag/Cu) | Tin/Silver/Copper (Sn/Ag/Cu) | Tin/Silver/Copper (Sn/Ag/Cu) | Tin/Silver/Copper (Sn/Ag/Cu) | Tin/Silver/Copper (Sn/Ag/Cu) | Tin/Silver/Copper (Sn/Ag/Cu) | Tin/Silver/Copper (Sn/Ag/Cu) |
端子形式 | BALL | BALL | BALL | BALL | BALL | BALL | BALL |
端子节距 | 1 mm | 1 mm | 1 mm | 0.8 mm | 1 mm | 0.8 mm | 1 mm |
端子位置 | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM |
处于峰值回流温度下的最长时间 | 30 | 30 | 30 | 30 | 30 | 30 | 30 |
宽度 | 17 mm | 17 mm | 17 mm | 15 mm | 17 mm | 15 mm | 17 mm |
Base Number Matches | 1 | 1 | 1 | 1 | - | - | - |
电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved