May 1996
NDP7060 / NDB7060
N-Channel Enhancement Mode Field Effect Transistor
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high cell
density, DMOS technology. This very high density process is
especially tailored to minimize on-state resistance, provide
superior switching performance, and withstand high energy
pulses in the avalanche and commutation modes. These
devices are particularly suited for low voltage applications such
as automotive, DC/DC converters, PWM motor controls, and
other battery powered circuits where fast switching, low in-line
power loss, and resistance to transients are needed.
Features
75A, 60V. R
DS(ON)
= 0.013
Ω
@ V
GS
=10V.
Critical DC electrical parameters specified at elevated
temperature.
Rugged internal source-drain diode can eliminate the need
for an external Zener diode transient suppressor.
175°C maximum junction temperature rating.
High density cell design for extremely low R
DS(ON)
.
TO-220 and TO-263 (D
2
PAK) package for both through hole
and surface mount applications.
________________________________________________________________________________
D
G
S
Absolute Maximum Ratings
Symbol
V
DSS
V
DGR
V
GSS
I
D
Parameter
Drain-Source Voltage
T
C
= 25°C unless otherwise noted
NDP7060
60
60
± 20
± 40
75
225
150
1
-65 to 175
275
NDB7060
Units
V
V
V
Drain-Gate Voltage (R
GS
< 1 M
Ω
)
Gate-Source Voltage - Continuous
- Nonrepetitive (t
P
< 50 µs)
Drain Current
- Continuous
- Pulsed
A
P
D
Maximum Power Dissipation @ T
C
= 25°C
Derate above 25°C
W
W/°C
°C
°C
T
J
,T
STG
T
L
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
© 1997 Fairchild Semiconductor Corporation
NDP7060.SAM
Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
DRAIN-SOURCE AVALANCHE RATINGS
(Note 1)
W
DSS
I
AR
BV
DSS
I
DSS
I
GSSF
I
GSSR
V
GS(th)
R
DS(ON)
I
D(on)
g
FS
Single Pulse Drain-Source Avalanche
Energy
Maximum Drain-Source Avalanche Current
V
DD
= 25 V, I
D
= 75 A
550
75
mJ
A
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
V
GS
= 0 V, I
D
= 250 µA
V
DS
= 60 V, V
GS
= 0 V
T
J
= 125°C
Gate - Body Leakage, Forward
Gate - Body Leakage, Reverse
V
GS
= 20 V, V
DS
= 0 V
V
GS
= -20 V, V
DS
= 0 V
V
DS
= V
GS
, I
D
= 250 µA
T
J
= 125°C
Static Drain-Source On-Resistance
V
GS
= 10 V, I
D
= 40 A
T
J
= 125°C
On-State Drain Current
Forward Transconductance
V
GS
= 10 V, V
DS
= 10 V
V
DS
= 10 V, I
D
= 37.5 A
V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
75
15
39
2
1.4
2.8
2.1
0.01
0.015
60
250
1
100
-100
V
µA
mA
nA
nA
ON CHARACTERISTICS
(Note 1)
Gate Threshold Voltage
4
3.6
0.013
0.024
A
S
V
Ω
DYNAMIC CHARACTERISTICS
C
iss
C
oss
C
rss
t
D(on)
t
r
t
D(off)
t
f
Q
g
Q
gs
Q
gd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
2960
1130
380
3600
1600
800
pF
pF
pF
SWITCHING CHARACTERISTICS
(Note 1)
Turn - On Delay Time
Turn - On Rise Time
Turn - Off Delay Time
Turn - Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DS
= 48 V,
I
D
= 75 A, V
GS
= 10 V
V
DD
= 30 V, I
D
= 75 A,
V
GS
= 10 V, R
GEN
= 5
Ω
17
128
54
90
100
14.5
51
30
400
80
200
115
nS
nS
nS
nS
nC
nC
nC
NDP7060.SAM
Electrical Characteristics
Symbol
Parameter
(T
C
= 25°C unless otherwise noted)
Conditions
Min
Typ
Max
Units
DRAIN-SOURCE DIODE CHARACTERISTICS
I
S
I
SM
V
SD
t
rr
I
rr
Maximum Continuos Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= 37.5 A
(
Note 1)
T
J
= 125°C
Reverse Recovery Time
Reverse Recovery Current
V
GS
= 0 V, I
F
= 75 A, dI
F
/dt = 100 A/µs
40
2
0.9
0.84
76
4.7
75
225
1.3
1.2
150
10
ns
A
A
A
V
THERMAL CHARACTERISTICS
R
θ
JC
R
θ
JA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
1
62.5
°C/W
°C/W
Note:
1. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.
NDP7060.SAM
Typical Electrical Characteristics
120
2.5
V
GS
=20V
I
D
, DRAIN-SOURCE CURRENT (A)
100
1 0 8.0
7.0
6.5
R
DS(on)
, NORMALIZED
V
GS
= 5.0V
DRAIN-SOURCE ON-RESISTANCE
2
5.5
6.0
6.5
7.0
8.0
80
6.0
60
1.5
5.5
40
5.0
20
1
4.5
4.0
0
0
1
2
3
V
DS
, DRAIN-SOURCE VOLTAGE (V)
4
5
10
12
20
0.5
0
20
40
60
80
I
D
, DRAIN CURRENT (A)
100
120
Figure 1. On-Region Characteristics
Figure 2. On-Resistance Variation with Gate
Voltage and Drain Current
2
1.8
1.6
R
DS(on)
, NORMALIZED
1.4
1.2
1
0.8
0.6
0.4
-50
1.8
I
D
= 40A
DRAIN-SOURCE ON-RESISTANCE
V
GS
= 10V
1.6
DRAIN-SOURCE ON-RESISTANCE
V
GS
= 10V
TJ = 125°C
R
DS(ON)
, NORMALIZED
1.4
1.2
25°C
1
0.8
-55°C
-25
0
25
50
75
100
125
T
J
, JUNCTION TEMPERATURE (°C)
150
175
0.6
0
20
40
60
80
I
D
, DRAIN CURRENT (A)
100
120
Figure 3. On-Resistance Variation
with Temperature
Figure 4. On-Resistance Variation with Drain
Current and Temperature
60
GATE-SOURCE THRESHOLD VOLTAGE
1.2
V
DS
= 10V
50
I
D
, DRAIN CURRENT (A)
V
GS(th)
, NORMALIZED
1.1
1
0.9
0.8
0.7
0.6
0.5
-50
V
DS
= V
GS
I
D
= 250µA
T = -55°C
J
40
125°C
25°C
30
20
10
0
2
3
4
5
6
V
GS
, GATE TO SOURCE VOLTAGE (V)
7
-25
0
25
50
75
100
125
T
J
, JUNCTION TEMPERATURE (°C)
150
175
Figure 5. Transfer Characteristics
Figure 6. Gate Threshold Variation with
Temperature
NDP7060.SAM
Typical Electrical Characteristics
(continued)
1.15
DRAIN-SOURCE BREAKDOWN VOLTAGE
I
D
= 250µA
I
S
, REVERSE DRAIN CURRENT (A)
1.1
100
50
10
V
GS
= 0V
BV
DSS
, NORMALIZED
T J = 125°C
1
1.05
25°C
-55°C
1
0.1
0.95
0.01
0.9
-50
-25
0
25
50
75
100
125
T
J
, JUNCTION TEMPERATURE (°C)
150
175
0.001
0.2
0.4
0.6
0.8
1
1.2
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
1.4
Figure 7. Breakdown Voltage Variation with
Temperature
Figure 8. Body Diode Forward Voltage
Variation with Current and Temperature
5000
20
V
GS
, GATE-SOURCE VOLTAGE (V)
3000
2000
CAPACITANCE (pF)
Ciss
15
I
D
= 75A
V
DS
= 12V
48V
1000
Coss
10
24V
500
f = 1 MHz
V
GS
= 0V
Crss
5
300
200
1
2
5
10
20
30
60
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
0
0
25
50
75
100
125
150
Q
g
, GATE CHARGE (nC)
Figure 9. Capacitance Characteristics
Figure 10. Gate Charge Characteristics
V
DD
t
d(on)
t
on
t
r
90%
t
o f f
t
d(off)
90%
t
f
V
IN
D
R
L
V
OUT
DUT
V
GS
V
O U T
10%
10%
INVERTED
R
GEN
G
90%
V
IN
S
10%
50%
50%
PULSE W IDTH
Figure 11. Switching Test Circuit
Figure 12. Switching Waveforms
NDP7060.SAM
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