RFMD’s SXB2089Z amplifier is a high linearity InGaP/GaAs Heterojunc-
tion Bipolar Transistor (HBT) MMIC housed in a low-cost, surface-mount-
able plastic package. These amplifiers are specially designed for use as
driver devices for infrastructure equipment in the 5MHz to 2500MHz Cel-
lular, ISM, WLL, PCS, and W-CDMA applications. It’s high linearity makes it
an ideal choice for multi-carrier as well as digital applications.
Features
High OIP
3
:+43dBm
at
1960MHz
P
1dB
:24dBm
High Linearity/ACP Perfor-
mance
Robust 2000V ESD, Class 2
SOT-89 Package
PA Driver Amplifier
IF Amplifier
Cellular, PCS, ISM, WLL,
W-CDMA
Optimum Technology
Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
RF MEMS
50
45
40
35
30
25
20
15
10
5
0
Typical IP3, P1dB, Gain
IP3
IP3
IP3
Applications
P1dB Gain
P1dB
Gain
P1dB
Gain
880 MHz
1960 MHz
2140 MHz
Parameter
Small Signal Gain
Min.
21.5
15.5
Specification
Typ.
25.0
23.0
17.0
17.0
1.1
1.4
1.6
1.3
24.0
24.5
24.5
40.0
41.0
43.0
43.0
4.9
4.5
4.7
4.2
16.0
16.3
15.5
15.6
51.3
135
Max.
24.5
21.5
Unit
dBm
dBm
dBm
dBm
Condition
450MHz
880MHz
1960MHz
2140MHz
450MHz
880MHz
1960MHz
2140MHz
450MHz
880MHz and 1960MHz
2140MHz
450MHz
880MHZ
1960MHz
2140MHz
450MHz
880MHz
1960MHz
2140MHz
450MHz, IS-95, -55dBc ACP
880MHz, IS-95, -55dBc ACP
1960MHz, IS-95, -55dBc ACP
2140MHz, WCDMA, -50dBc ACP
junction - lead
V
S
=8v, R
BIAS
=20, V
DEVICE
=5.2V
Input VSWR
2.5
Output Power at 1dB Compression
23.0
Third Order Intercept Point
38.0
40.0
Noise Figure
6.0
Channel Power IS-95
Thermal Resistance
Device Operating Current
120
150
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dB
dB
dB
dB
dBm
dBm
dBm
dBm
°C/W
mA
Test Conditions: T
A
=25°C, Z
0
=50P
OUT
per tone=+11dBm, ToneSpacing=1MHz
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
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