SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF323/D
The RF Line
NPN Silicon
RF Power Transistor
. . . designed primarily for wideband large–signal driver and predriver amplifier
stages in the 200–500 MHz frequency range.
•
Guaranteed Performance at 400 MHz, 28 V
Output Power = 20 Watts
Power Gain = 10 dB Min
Efficiency = 50% Min
•
100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR
•
Gold Metallization System for High Reliability
•
Computer–Controlled Wirebonding Gives Consistent Input Impedance
MRF323
20 W, 400 MHz
RF POWER
TRANSISTOR
NPN SILICON
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Collector Current
— Peak
Total Device Dissipation @ T
C
= 25°C (1)
Derate above 25°C
Storage Temperature Range
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
D
T
stg
Value
33
60
4.0
2.2
3.0
55
310
–65 to +150
Unit
Vdc
Vdc
Vdc
Adc
Watts
mW/°C
°C
CASE 244–04, STYLE 1
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
θJC
Max
3.2
Unit
°C/W
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I
C
= 20 mAdc, I
B
= 0)
Collector–Emitter Breakdown Voltage
(I
C
= 20 mAdc, V
BE
= 0)
Collector–Base Breakdown Voltage
(I
C
= 20 mAdc, I
E
= 0)
Emitter–Base Breakdown Voltage
(I
E
= 2.0 mAdc, I
C
= 0)
Collector Cutoff Current
(V
CB
= 30 Vdc, I
E
= 0)
V
(BR)CEO
V
(BR)CES
V
(BR)CBO
V
(BR)EBO
I
CBO
33
60
60
4.0
—
—
—
—
—
—
—
—
—
—
2.0
Vdc
Vdc
Vdc
Vdc
mAdc
ON CHARACTERISTICS
DC Current Gain
(I
C
= 1.0 Adc, V
CE
= 5.0 Vdc)
h
FE
20
—
80
—
NOTE:
(continued)
1. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier.
1
ELECTRICAL CHARACTERISTICS — continued
(T
C
= 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
DYNAMIC CHARACTERISTICS
Output Capacitance
(V
CB
= 28 Vdc, I
E
= 0, f = 1.0 MHz)
C
ob
—
20
24
pF
FUNCTIONAL TESTS
(Figure 1)
Common–Emitter Amplifier Power Gain
(V
CC
= 28 Vdc, P
out
= 20 W, f = 400 MHz)
Collector Efficiency
(V
CC
= 28 Vdc, P
out
= 20 W, f = 400 MHz)
Load Mismatch
(V
CC
= 28 Vdc, P
out
= 20 W, f = 400 MHz,
VSWR = 30:1 all phase angles)
G
PE
η
ψ
No Degradation in Output Power
10
50
11
60
—
—
dB
%
L4
C9
C10
+
-
+
28 V
-
C8
L3
Z3
L2
C5
C3
C4
R1
C11
DUT
RF INPUT
Z1
Z2
Z4
C12
RF OUTPUT
C1
C2
L1
C6
C7
C1, C2, C6 — 1.0–20 pF Johanson Trimmer (JMC 5501)
C3, C4 — 47 pF ATC Chip Capacitor
C5, C8 — 0.1
µF
Erie Redcap
C7 — 0.5–10 pF Johanson Trimmer (JMC 5201)
C9, C10 — 680 pF Feedthru
C11 — 1.0
µF
50 Volt Tantalum
C12 — 0.018
µF
Vitramon Chip Capacitor
L1 — 0.33
µH
Molded Choke with Ferroxcube Bead
L1 —
(Ferroxcube 56–590–65/4B) on Ground End
L2 — 6 Turns #20 Enamel, 1/4″ ID, Closewound
L3 — 4 Turns #20 Enamel, 1/8″ ID, Closewound
L4 — Ferroxcube VK200–19/4B
R1 — 5.1
Ω
1/4 Watt
Z1 — Microstrip 0.1″ W x 1.35″ L
Z2 — Microstrip 0.1″ W x 0.55″ L
Z3 — Microstrip 0.1″ W x 0.8″ L
Z4 — Microstrip 0.1″ W x 1.75″ L
Board — Glass Teflon
ε
r
= 2.56, t = 0.062″
Input/Output Connectors — Type N
Figure 1. 400 MHz Test Circuit Schematic
2
25
Pout , OUTPUT POWER (WATTS)
20
15
10
5
V
CC
= 28 V
0
0
200
300
400
Pout , OUTPUT POWER (WATTS)
P
in
= 3 W
2.5 W
2W
1.5 W
1W
0.7 W
0.4 W
500
25
20
15
10
5
f = 200 MHz
400
500
V
CC
= 28 V
0
0
1
2
3
4
5
f, FREQUENCY (MHz)
P
in
, INPUT POWER (WATTS)
Figure 2. Output Power versus Frequency
Figure 3. Output Power versus Input Power
24
G PE , COMMON EMITTER AMPLIFIER
POWER GAIN (dB)
Pout , OUTPUT POWER (WATTS)
P
in
= 1.8 W
20
16
12
8
f = 400 MHz
4
10
14
18
22
26
30
22
18
14
10
6
2
P
o
= 20 W
V
CC
= 28 V
1.1 W
0
200
300
400
500
V
CC
, SUPPLY VOLTAGE (VOLTS)
f, FREQUENCY (MHz)
Figure 4. Output Power versus Supply Voltage
Figure 5. Power Gain versus Frequency
3
-5
-10
0
400
Z
in
f = 200 MHz
450
5
10
500
5
450
400
Z
OL
*
f = 200 MHz
10
500
P
out
= 20 W, V
CC
= 28 V
f
MHz
200
400
450
500
Z
in
Ohms
0.6 - j0.23
0.71 + j1.79
1.2 + j3.8
2.3 + j5.5
Z
OL
*
Ohms
7.2 - j11.4
6.0 - j6.87
5.9 - j5.1
6.2 - j3.1
15
20
25
Z
OL
* = Conjugate of the optimum load impedance into which the device output operates at a given output power,
Z
OL
* =
voltage and frequency.
Figure 6. Series Equivalent Impedance
4
PACKAGE DIMENSIONS
2
3
4
1
D
K
M
DIM
A
B
C
D
E
G
J
K
M
P
S
T
U
STYLE 1:
PIN 1.
2.
3.
4.
MILLIMETERS
MIN
MAX
7.06
7.26
6.20
6.50
14.99
16.51
5.46
5.96
1.40
1.65
1.52
---
0.08
0.17
11.05
---
45
_
NOM
---
1.27
3.00
3.25
1.40
1.77
2.92
3.68
INCHES
MIN
MAX
0.278
0.286
0.244
0.256
0.590
0.650
0.215
0.235
0.055
0.065
0.060
---
0.003
0.007
0.435
---
45
_
NOM
---
0.050
0.118
0.128
0.055
0.070
0.115
0.145
T
A
J
F
SEATING PLANE
P
8-32 NC 2A
U
S
C
WRENCH FLAT
E
B
EMITTER
BASE
EMITTER
COLLECTOR
CASE 244–04
ISSUE J
Specifications subject to change without notice.
n
North America:
Tel. (800) 366-2266, Fax (800) 618-8883
n
Asia/Pacific:
Tel.+81-44-844-8296, Fax +81-44-844-8298
n
Europe:
Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
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