NPN - MPS8099; PNP -
MPS8599
Amplifier Transistors
Voltage and Current are Negative
for PNP Transistors
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Features
•
These are Pb−Free Devices*
MAXIMUM RATINGS
Rating
Collector
−Emitter
Voltage
Collector
−Base
Voltage
Emitter−Base Voltage
Collector Current
−
Continuous
Total Device Dissipation @ T
A
= 25°C
Derate above 25°C
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
D
P
D
T
J
, T
stg
Value
80
80
6.0
500
625
5.0
1.5
12
−55
to +150
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
W
mW/°C
°C
NPN
COLLECTOR
3
2
BASE
1
EMITTER
2
BASE
PNP
COLLECTOR
3
1
EMITTER
TO−92
CASE 29
STYLE 1
12
1
2
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Ambient
(Note 1)
Thermal Resistance, Junction−to−Case
Symbol
R
qJA
R
qJC
Max
200
83.3
Unit
°C/W
°C/W
3
STRAIGHT LEAD
BULK PACK
3
BENT LEAD
TAPE & REEL
AMMO PACK
MARKING DIAGRAM
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. R
qJA
is measured with the device soldered into a typical printed circuit board.
MPS
8x99
AYWW
G
G
x
= 0 or 5
A
= Assembly Location
Y
= Year
WW = Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2012
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
August, 2012
−
Rev. 2
1
Publication Order Number:
MPS8099/D
NPN
−
MPS8099; PNP
−
MPS8599
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector
−Emitter
Breakdown Voltage (Note 2)
(I
C
= 10 mAdc, I
B
= 0)
Collector
−Base
Breakdown Voltage
(I
C
= 100
mAdc,
I
E
= 0)
Emitter−Base Breakdown Voltage
(I
E
= 10
mAdc,
I
C
= 0)
Collector Cutoff Current
(V
CE
= 60 Vdc, I
B
= 0)
Collector Cutoff Current
(V
CB
= 80 Vdc, I
E
= 0)
Emitter Cutoff Current
(V
EB
= 6.0 Vdc, I
C
= 0)
ON CHARACTERISTICS
(Note 2)
DC Current Gain
(I
C
= 1.0 mAdc, V
CE
= 5.0 Vdc)
(I
C
= 10 mAdc, V
CE
= 5.0 Vdc)
(I
C
= 100 mAdc, V
CE
= 5.0 Vdc)
Collector
−Emitter
Saturation Voltage
(I
C
= 100 mAdc, I
B
= 5.0 mAdc)
(I
C
= 100 mAdc, I
B
= 10 mAdc)
Base−Emitter On Voltage
(I
C
= 10 mAdc, V
CE
= 5.0 Vdc)
SMALL−SIGNAL CHARACTERISTICS
Current
−Gain −
Bandwidth Product
(I
C
= 10 mAdc, V
CE
= 5.0 Vdc, f = 100 MHz)
Output Capacitance
(V
CB
= 5.0 Vdc, I
E
= 0, f = 1.0 MHz)
Input Capacitance
(V
EB
= 0.5 Vdc, I
C
= 0, f = 1.0 MHz)
2. Pulse Test: Pulse Width
v
300
ms,
Duty Cycle = 2.0%.
f
T
C
obo
C
ibo
150
−
−
−
8.0
30
MHz
pF
pF
h
FE
100
100
75
−
−
0.6
300
−
−
0.4
0.3
0.8
−
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CES
I
CBO
I
EBO
80
80
6.0
−
−
−
−
−
−
0.1
0.1
0.1
Vdc
Vdc
Vdc
mAdc
mAdc
mAdc
Symbol
Min
Max
Unit
V
CE(sat)
Vdc
V
BE(on)
Vdc
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2
NPN
−
MPS8099; PNP
−
MPS8599
ORDERING INFORMATION
Device
MPS8099G
MPS8099RLRAG
MPS8099RLRPG
MPS8599RLRAG
MPS8599RLRMG
Package
TO−92
(Pb−Free)
TO−92
(Pb−Free)
TO−92
(Pb−Free)
TO−92
(Pb−Free)
TO−92
(Pb−Free)
Shipping
†
5000 Units / Bulk
2000 / Tape & Reel
2000 / Ammo Pack
2000 / Tape & Reel
2000 / Ammo Pack
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specification Brochure, BRD8011/D.
r(t), NORMALIZED TRANSIENT
THERMAL RESISTANCE
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.01
D = 0.5
0.2
0.1
0.05
SINGLE PULSE
0.02
0.01
P
(pk)
t
1
SINGLE PULSE
t
2
DUTY CYCLE, D = t
1
/t
2
1.0
2.0
5.0
10
20
50
100
200
t, TIME (ms)
500
1.0 k
2.0 k
5.0 k
Z
qJC
(t) = r(t)
•
R
qJC
T
J(pk)
- T
C
= P
(pk)
Z
qJC
(t)
Z
qJA
(t) = r(t)
•
R
qJA
T
J(pk)
- T
A
= P
(pk)
Z
qJA
(t)
D CURVES APPLY FOR
POWER PULSE TRAIN
SHOWN READ TIME AT t
1
(SEE AN469)
10 k
20 k
50 k 100 k
Figure 1. Thermal Response
TURN-ON TIME
-1.0 V
V
CC
+40 V
5.0
ms
+10 V
V
in
0
t
r
= 3.0 ns
5.0
mF
100
5.0
ms
t
r
= 3.0 ns
R
B
* C
S
t
6.0 pF
100
R
L
OUTPUT
V
in
5.0
mF
TURN-OFF TIME
+V
BB
V
CC
+40 V
100
R
B
* C
S
t
6.0 pF
100
R
L
OUTPUT
*Total Shunt Capacitance of Test Jig and Connectors For PNP Test Circuits, Reverse All Voltage Polarities
Figure 2. Switching Time Test Circuits
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3
NPN
−
MPS8099; PNP
−
MPS8599
NPN
f T , CURRENT-GAIN - BANDWIDTH PRODUCT (MHz)
300
T
J
= 25°C
200
5.0 V
V
CE
= 1.0 V
100
70
50
f T , CURRENT-GAIN - BANDWIDTH PRODUCT (MHz)
300
T
J
= 25°C
200
-5.0 V
V
CE
= -1.0 V
100
70
50
PNP
30
1.0
2.0
3.0
5.0 7.0 10
20
30
50 70 100
I
C
, COLLECTOR CURRENT (mA)
30
-1.0
-2.0 -3.0
-5.0 -7.0 -10
-20 -30
-50 -70 -100
I
C
, COLLECTOR CURRENT (mA)
Figure 3. Current−Gain
−
Bandwidth Product
Figure 4. Current−Gain
−
Bandwidth Product
40
T
J
= 25°C
20
C, CAPACITANCE (pF)
C, CAPACITANCE (pF)
C
ibo
10
8.0
6.0
4.0
C
obo
2.0
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
V
R
, REVERSE VOLTAGE (VOLTS)
40
25°C
TT
J
==25°C
J
20
C
ibo
10
8.0
6.0
C
obo
4.0
2.0
-0.1 -0.2
-0.5 -1.0
-2.0
-5.0
-10 -20
-50 -100
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 5. Capacitance
Figure 6. Capacitance
1.0 k
700
500
300
t, TIME (ns)
200
100
70
50
30
20
V
CC
= 40 V
I
C
/I
B
= 10
I
B1
= I
B2
T
J
= 25°C
t
s
1.0 k
700
500
300
t, TIME (ns)
200
100
70
50
30
t
s
V
CC
= -40 V
I
C
/I
B
= 10
I
B1
= I
B2
T
J
= 25°C
t
f
t
f
t
r
t
d
@ V
BE(off)
= 0.5 V
10
10
20
30
50
70
100
t
r
200
20
10
-10
t
d
@ V
BE(off)
= -0.5 V
-20
-30
-50
-70
-100
-200
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
Figure 7. Switching Times
Figure 8. Switching Times
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4
NPN
−
MPS8099; PNP
−
MPS8599
NPN
1.0 k
700
500
300
200
100
70
50
30
20
DUTY CYCLE
≤
10%
10
1.0
2.0
3.0
5.0 7.0 10
-1.0 k
-700
-500
-300
PNP
I C , COLLECTOR CURRENT (mA)
I C , COLLECTOR CURRENT (mA)
-200
-100
-70
-50
-30
-20
-10
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
MPS8098
MPS8099
20
30
50
70 100
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
MPS8598
DUTY CYCLE
≤
10%
MPS8599
-1.0
-2.0 -3.0
-5.0 -7.0 -10
-20 -30
-50 -70 -100
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 9. Active−Region Safe Operating Area
Figure 10. Active−Region Safe Operating Area
400
T
J
= 125°C
h FE , DC CURRENT GAIN
200
-55°C
h FE, DC CURRENT GAIN
25°C
300
T
J
= 125°C
200
25°C
100
70
50
-55°C
V
CE
= -5.0 V
100
80
60
40
0.2 0.3 0.5
1.0
2.0 3.0 5.0
10
20 30
50
100 200
I
C
, COLLECTOR CURRENT (mA)
V
CE
= 5.0 V
30
-0.2
-0.5
-1.0 -2.0
-5.0
-10
-20
-50 -100 -200
I
C
, COLLECTOR CURRENT (mA)
Figure 11. DC Current Gain
Figure 12. DC Current Gain
1.0
T
J
= 25°C
V
BE(sat)
@ I
C
/I
B
= 10
V
BE
@ V
CE
= 5.0 V
1.0
T
J
= 25°C
V
BE(sat)
@ I
C
/I
B
= 10
V
BE
@ V
CE
= 5.0 V
0.8
V, VOLTAGE (VOLTS)
0.8
V, VOLTAGE (VOLTS)
0.6
0.6
0.4
0.4
0.2
V
CE(sat)
@ I
C
/I
B
= 10
0
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
0.2
V
CE(sat)
@ I
C
/I
B
= 10
0
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
Figure 13. “ON” Voltages
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5
Figure 14. “ON” Voltages
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