Silicon Tuning Diode
These devices are designed in the popular PLASTIC PACK-
AGE for high volumerequirements of FM Radio and TV tuning and
AFC, general frequency control andtuning applications.They pro-
vide solid–state reliability in replacement of mechanical tuning
methods. Also available in Surface Mount Package up to 33pF.
•
High Q
•
Controlled and Uniform Tuning Ratio
•
Standard Capacitance Tolerance
—10%
•
Complete Typical Design Curves
MMBV2101LT1
MMBV2103LT1
MMBV2105LT1
MMBV2107LT1
MMBV2108LT1
MMBV2109LT1
6.8-100p
30 VOLTS
VOLTAGE VARIABLE
CAPACITANCE DIODES
3
CATHODE
1
ANODE
3
1
2
CASE
318–08, STYLE 8
SOT– 23 (TO–236AB)
MAXIMUM RATINGS(EACH DIODE)
Rating
Reverse Voltage
Forward Current
Device Dissipation @T
A
= 25°C
Derate above 25°C
Junction Temperature
Storage Temperature Range
Symbol
V
R
I
F
P
D
T
J
T
stg
M V 2 1 X X MMBV21XXLT1 Unit
30
Vdc
200
280
2.8
225
1.8
+150
–55 to +150
mAdc
mW
mW/°C
°C
°C
DEVICE MARKING
MMBV2101LT1=M4G
MMBV2103LT1=4H
MMBV2105LT1=4U
Characteristic
Reverse Breakdown Voltage
(I
R
=1.0µAdc)
Reverse Voltage Leakage Current
(V
R
=25Vdc,T
A
=25°C)
Diode Capacitance Temperature Coefficient
(V
R
=4.0Vdc,f=1.0MHz)
MMBV2107LT1=4W
MMBV2108LT1=4X
MMBV2109LT1=4J
Symbol
V
(BR)R
I
R
T
CC
Min
30
—
—
Typ
—
—
280
Max
—
0.1
—
Unit
Vdc
µAdc
ppm/°C
ELECTRICAL CHARACTERISTICS(T
A
=25°C unless otherwise noted)
I6–1/3
MMBV2101LT1 MMBV2103LT1 MMBV2105LT1
MMBV2107LT1 MMBV2108LT1 MMBV2109LT1
C
Device
V
R
T
, Diode Capacitance
= 4.0 Vdc, f = 1.0 MHz
pF
Min
6.1
9.0
10.8
13.5
19.8
24.3
29.7
42.3
90
Nom
6.8
10
12
15
22
27
33
47
100
Max
7.5
11
13.2
16.5
24.2
29.7
36.3
51.7
110
Q, Figure of Merit
V
R
= 4.0 Vdc,
f = 50 MHz
Typ
450
400
400
400
350
300
200
150
100
T
R
, Tuning Ratio
C
2
/C
30
f = 1.0 MHz
Min
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.6
Typ
2.7
2.9
2.9
2.9
2.9
3.0
3.0
3.0
3.0
Max
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.3
MMBV2101LT1/MV2101
MMBV2103LT1
MV2104
MMBV2105LT1/MV2105
MMBV2107LT1
MMBV2108LT1/MV2108
MMBV2109LT1/MV2109
MV2111
MV2115
MMBV2101LT1, MMBV2103LT1, MMBV2105LT1, MMBV2107LT1 thru MMBV2109LT1,
are also available in bulk.
Use the device title and drop the “T1” suffix when ordering any of these devices in bulk.
PARAMETER TEST METHODS
4.T
CC
,DIODE CAPACITANCE TEMPERATURE
COEFFICIENT~ T
CC
is guaranteed by comparing C
T
at
~
V
R
=4.0Vdc,f=1.0MHz,T
A
= – 65
°C
with CT at V
R
=4.0Vdc,
f=1.0MHz,T
A
= + 85
°C
in the following equation,which
defines TC
C
:
C
T
(+85
°C
) – C
T
(–65
°C
)
10
6
.
TC
C
=
85+65
C
T
(25
°C
)
1. C
T
, DIODE CAPACITANCE
(C
T
= C
C
+ C
J
). C
T
is measured at 1.0 MHz using a
ca-pacitance bridge (Boonton Electronics Model
75A or equivalent).
2. T
R
, TUNING RATIO
T
R
is the ratio of C
T
measured at 2.0 Vdc divided by
C
T
measured at 30 Vdc.
3. Q, FIGURE OF MERIT
Q is calculated by taking the G and C readings of an
ad-mittance bridge at the specified frequency and
substitut-ing in the following equations:
Q=
2πfC
G
(Booton Electronics Model 33As8 or equivalent).Use
Lead Length
1/16”.
I6–2/3
MMBV2101LT1 MMBV2103LT1 MMBV2105LT1
MMBV2107LT1 MMBV2108LT1 MMBV2109LT1
TYPICAL DEVICE CHARACTERISTICS
1000
C
T
, DIODE CAPACITANCE (pF)
500
MV2115
200
100
50
T
A
= 25°C
f = 1.0 MHz
MMBV2109LT1/MV2109
MMBV2105LT1/MV2105
20
10
5.0
2.0
1.0
0.1
MMBV2101LT1/MV2101
0.2
0.3
0.5
1.0
2.0
3.0
5.0
10
20
30
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 1. Diode Capacitance versus Reverse Voltage
NORMALIZED DIODE CAPACITANCE
1.040
100
50
I
R
, REVERSE CURRENT (nA)
1.030
1.020
1.010
1.000
0.990
0.980
0.970
0.960
–75
V
R
= 2.0Vdc
20
10
5.0
2.0
1.0
.50
.20
T
A
= 125°C
V
R
= 4.0Vdc
V
R
= 30Vdc
NORMALIZED TO C
T
at T
A
= 25°C
V
R
= (CURVE)
–50
–25
0
+25
+50
+75
+100
+125
T
A
= 75°C
T
A
= 25°C
.10
.05
.02
.01
0
5.0
10
15
20
25
30
T
J
, JUNCTION TEMPERATURE (°C)
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 2. Normalized Diode Capacitance
versus Junction Temperature
Figure 3. Reverse Current versus
Reverse Bias Voltage
5000
3000
2000
5000
MMBV2101LT1/MV2101
MMBV2109LT1/MV2109
3000
2000
Q, FIGURE OF MERIT
MV2115
100
50
30
20
10
1.0
2.0
3.0
5.0
7.0
10
20
30
Q, FIGURE OF MERIT
1000
500
300
200
1000
500
300
200
MMBV2101LT1/MV2101
100
MV2115
50
30
20
10
10
20
30
50
70
100
200
300
T
A
= 25°C
f = 50 MHz
T
A
= 25°C
V
R
= 4.0 Vdc
MMBV2109LT1/MV2109
V
R
, REVERSE VOLTAGE (VOLTS)
f, FREQUENCY (MHz)
Figure 4. Figure of Merit versus
Reverse Voltage
Figure 5. Figure of Merit versus
Frequency
I6–3/3
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