VHFD 29
Half Controlled
Single Phase Rectifier Bridge
Including Freewheeling Diode and Field Diodes
V
RSM
V
DSM
V
900
1300
1700
V
RRM
V
DRM
V
800
1200
1600
VHFD 29-08io1
VHFD 29-12io1
VHFD 29-16io1
Type
V
RRM
= 800-1600 V
I
dAVM
= 32 A
3
1 2
5
6
8
10
Bridge and Freewheeling Diode
Symbol
I
dAV
I
dAVM
I
FRMS
, I
TRMS
I
FSM
, I
TSM
Conditions
T
H
= 85°C, module
module
per leg
T
VJ
= 45°C;
V
R
= 0 V
T
VJ
= T
VJM
V
R
= 0 V
I
2
t
T
VJ
= 45°C
V
R
= 0 V
T
VJ
= T
VJM
V
R
= 0 V
(di/dt)
cr
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
Maximum Ratings
28
32
25
300
330
270
300
440
455
365
370
150
A
A
A
A
A
A
A
A
2
s
A
2
s
A
2
s
A
2
s
A/μs
Features
Package with DCB ceramic base
plate
Isolation voltage 3600 V~
Planar passivated chips
Blocking voltage up to 1600 V
Low forward voltage drop
Leads suitable for PC board soldering
UL registered E 72873
Applications
Supply for DC power equipment
DC motor control
Advantages
Easy to mount with two screws
Space and weight savings
Improved temperature and power
cycling
Dimensions in mm (1 mm = 0.0394")
T
VJ
= 125°C
repetitive, I
T
= 50 A
f = 50 Hz, t
P
= 200
μs
V
D
= 2/3 V
DRM
I
G
= 0.3 A,
non repetitive, I
T
= 0.5 I
dAV
di
G
/dt = 0.3 A/μs
T
VJ
= T
(vj)m
; V
DR
= 2/3 V
DRM
R
GK
=
∞;
method 1 (linear voltage rise)
T
VJ
= T
VJM
I
T
= 0.5 I
dAVM
t
p
= 30
μs
t
p
= 500
μs
t
p
= 10 ms
≤
≤
≤
500
1000
10
10
5
1
0.5
A/μs
V/μs
V
W
W
W
W
°C
°C
°C
V~
V~
mm
mm
m/s
2
Nm
lb.in.
g
(dv/dt)
cr
V
RGM
P
GM
P
GAVM
T
VJ
T
VJM
T
stg
V
ISOL
d
S
d
A
a
M
d
Weight
50/60 Hz, RMS
I
ISOL
≤
1 mA
t = 1 min
t=1s
-40...+125
125
-40...+125
3000
3600
12.7
9.4
50
2-2.5
18-22
35
Creep distance on surface
Strike distance in air
Max. allowable acceleration
Mounting torque
(M5)
(10-32 UNF)
IXYS reserves the right to change limits, test conditions and dimensions.
20100705a
© 2010 IXYS All rights reserved
1-3
VHFD 29
Symbol
I
R
, I
D
V
T
, V
F
V
T0
r
T
V
GT
I
GT
Conditions
V
R
= V
RRM
; V
D
= V
DRM
I
T
, I
F
= 45 A; T
VJ
= 25°C
For power-loss calculations only (T
VJ
= 125°C)
V
D
= 6 V;
V
D
= 6 V;
T
VJ
= 25°C
T
VJ
= -40°C
T
VJ
= 25°C
T
VJ
= -40°C
T
VJ
= 125°C
V
D
= 2/3 V
DRM
V
D
= 2/3 V
DRM
T
VJ
= 25°C
T
VJ
= -40°C
T
VJ
= 125°C
≤
≤
≤
≤
≤
≤
≤
≤
≤
≤
≤
≤
typ.
T
VJ
= T
VJM
T
VJ
= 25°C
Characteristic Values
≤
≤
≤
5
0.3
1.6
0.9
15
1.0
1.2
65
80
50
0.2
5
150
200
100
100
2
150
75
1.4
0.35
2.0
0.5
mA
mA
V
V
mΩ
V
V
mA
mA
mA
V
mA
mA
mA
mA
mA
μs
μs
μC
K/W
K/W
K/W
K/W
1000
μs
t
gd
100
typ.
Limit
T
VJ
= 25°C
0.1
1
1
10
1: I
GT
, T
VJ
= 125°C
V
V
G
2: I
GT
, T
VJ
= 25°C
3: I
GT
, T
VJ
= -40°C
2
3
6
4
5
V
GD
I
GD
I
L
T
VJ
= T
VJM
;
T
VJ
= T
VJM
;
I
G
= 0.3 A; t
G
= 30
μs;
di
G
/dt = 0.3 A/μs;
I
GD
, T
VJ
= 125°C
4: P
GAV
= 0.5 W
5: P
GM
= 1 W
6: P
GM
= 10 W
1
10
100
1000
I
G
mA
I
H
t
gd
t
q
Q
r
R
thJC
R
thJH
T
VJ
= 25°C; V
D
= 6 V; R
GK
=
∞
T
VJ
= 25°C; V
D
= 0.5V
DRM
I
G
= 0.3 A; di
G
/dt = 0.3 A/μs
T
VJ
= 125°C, I
T
= 15 A, t
P
= 300
μs,
V
R
= 100 V
di/dt = -10 A/μs, dv/dt = 20 V/μs, V
D
= 2/3 V
DRM
per thyristor (diode); DC current
per module
per thyristor (diode); DC current
per module
Fig. 1 Gate trigger range
10
Field Diodes
Symbol
I
FAV
I
FAVM
I
FRMS
I
FSM
Conditions
T
H
= 85°C, per Diode
per diode
per diode
T
VJ
= 45°C;
V
R
= 0 V
T
VJ
= T
VJM
V
R
= 0 V
I
2
t
T
VJ
= 45°C
V
R
= 0 V
T
VJ
= T
VJM
V
R
= 0 V
I
R
V
F
V
T0
r
T
R
thJC
R
thJH
V
R
= V
RRM
I
F
= 21 A; T
VJ
= 25°C
For power-loss calculations only (T
VJ
= 125°C)
per diode; DC current
per diode; DC current
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
T
VJ
= T
VJM
T
VJ
= 25°C
Maximum Ratings
4
4
6
100
110
85
94
50
50
36
37
1
0.15
1.83
0.9
50
4.4
5.2
A
A
A
A
A
A
A
A
2
s
A
2
s
A
2
s
A
2
s
mA
mA
V
V
mΩ
K/W
K/W
1
10
100
I
G
mA 1000
Fig. 2 Gate controlled delay time t
gd
Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated.
for resistive load
IXYS reserves the right to change limits, test conditions and dimensions.
20100705a
© 2010 IXYS All rights reserved
2-3
VHFD 29
70
A
60
I
F
50
40
30
20
10
0
0.0
40
240
A
50Hz, 80% V
RRM
2
10
3
A
2
s
V
R
= 0 V
typ.
200
I
FSM
160
T
VJ
= 45°C
It
T
VJ
= 45°C
T
VJ
= 125°C
T
VJ
= 125°C
T
VJ
= 25°C
max.
120
10
2
80
T
VJ
= 125°C
0.5
1.0
V
F
1.5
V 2.0
0
0.001
10
1
0.01
0.1
t
s
1
1
2
3
4 5 6 7 ms10
89
t
Fig. 3 Forward current vs. voltage
drop per diode
100
W
Fig. 4 Surge overload current
35
Fig. 5 I
2
t versus time per diode
R
thHA
:
80
P
tot
60
0.5 K/W
A
30
I
d(AV)M
25
20
15
10
1.0 K/W
1.5
2.0
3.0
4.0
6.0
K/W
K/W
K/W
K/W
K/W
40
20
5
0
0
5
10
15
20
25
I
d(AV)M
30 A 35
0
0
20
40
60
80
100 120 °C
140
T
amb
0
0
20
40
60
80 100 120 °C
T
H
Fig. 6 Power dissipation vs. direct output current and ambient temperature
2.5
K/W
2.0
Z
thJH
1.5
Fig. 7 Max. forward current vs.
heatsink temperature
Constants for Z
thJH
calculation:
1.0
i
0.5
R
thi
(K/W)
0.007
0.266
1.127
0.6
t
i
(s)
0.008
0.05
0.06
0.25
1
2
3
4
0.01
0.1
1
t
s
10
0.0
0.001
Fig. 8 Transient thermal impedance junction to heatsink
IXYS reserves the right to change limits, test conditions and dimensions.
20100705a
© 2010 IXYS All rights reserved
3-3
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