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HYB39S256160CTL-8A: 产品描述Synchronous DRAM, 16MX16, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-54; 产品类别存储存储; 文件大小289KB，共49页; 制造商Infineon(英飞凌); 官网地址http://www.infineon.com/

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HYB39S256160CTL-8A概述

Synchronous DRAM, 16MX16, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-54

HYB39S256160CTL-8A规格参数

参数名称	属性值
是否Rohs认证	不符合
厂商名称	Infineon(英飞凌)
零件包装代码	TSOP2
包装说明	TSOP2, TSOP54,.46,32
针数	54
Reach Compliance Code	unknown
ECCN代码	EAR99
Is Samacsys	N
访问模式	FOUR BANK PAGE BURST
最长访问时间	6 ns
其他特性	AUTO/SELF REFRESH
最大时钟频率 (fCLK)	125 MHz
I/O 类型	COMMON
交错的突发长度	1,2,4,8
JESD-30 代码	R-PDSO-G54
JESD-609代码	e0
长度	22.22 mm
内存密度	268435456 bit
内存集成电路类型	SYNCHRONOUS DRAM
内存宽度	16
功能数量	1
端口数量	1
端子数量	54
字数	16777216 words
字数代码	16000000
工作模式	SYNCHRONOUS
最高工作温度	70 °C
最低工作温度
组织	16MX16
输出特性	3-STATE
封装主体材料	PLASTIC/EPOXY
封装代码	TSOP2
封装等效代码	TSOP54,.46,32
封装形状	RECTANGULAR
封装形式	SMALL OUTLINE, THIN PROFILE
峰值回流温度（摄氏度）	NOT SPECIFIED
电源	3.3 V
认证状态	Not Qualified
刷新周期	8192
座面最大高度	1.2 mm
自我刷新	YES
连续突发长度	1,2,4,8,FP
最大待机电流	0.002 A
最大压摆率	0.22 mA
最大供电电压 (Vsup)	3.6 V
最小供电电压 (Vsup)	3 V
标称供电电压 (Vsup)	3.3 V
表面贴装	YES
技术	CMOS
温度等级	COMMERCIAL
端子面层	Tin/Lead (Sn/Pb)
端子形式	GULL WING
端子节距	0.8 mm
端子位置	DUAL
处于峰值回流温度下的最长时间	NOT SPECIFIED
宽度	10.16 mm
Base Number Matches	1

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HYB39S256400/800/160CT(L)

256MBit Synchronous DRAM

256 MBit Synchronous DRAM

•

High Performance:

-7.5

fCK

tCK3

tAC3

tCK2

tAC2

133

7.5

5.4

-8

125

-8A

125

Units

MHz

•

Multiple Burst Read with Single Write

Operation

Automatic

Command

and

Controlled

Precharge

Data Mask for Read / Write control (x4, x8)

Data Mask for byte control (x16)

Auto Refresh (CBR) and Self Refresh

Power Down and Clock Suspend Mode

8192 refresh cycles / 64 ms (7,8

µs)

Random Column Address every CLK

( 1-N Rule)

Single 3.3V +/- 0.3V Power Supply

LVTTL Interface versions

Plastic Packages:

P-TSOPII-54 400mil width (x4, x8, x16)

-7.5 parts for PC133 3-3-3 operation

-8 parts for PC100 2-2-2 operation

-8A parts for PC100 3-2-2 operation

•

Fully Synchronous to Positive Clock Edge

0 to 70

°C

operating temperature

Four Banks controlled by BA0 & BA1

Programmable CAS Latency: 2 & 3

Programmable Wrap Sequence: Sequential

or Interleave

Programmable Burst Length:

1, 2, 4, 8

Full page burst length (optional) for

sequential wrap around

The HYB39S256400/800/160CT(L) are four bank Synchronous DRAM’s organized as 4 banks x

16MBit x4, 4 banks x 8MBit x8 and 4 banks x 4Mbit x16 respectively. These synchronous devices

achieve high speed data transfer rates for CAS-latencies by employing a chip architecture that

prefetches multiple bits and then synchronizes the output data to a system clock. The chip is

fabricated with INFINEON’s advanced 0.17

µm

256MBit DRAM process technology.

The device is designed to comply with all industry standards set for synchronous DRAM products,

both electrically and mechanically. All of the control, address, data input and output circuits are

synchronized with the positive edge of an externally supplied clock.

Operating the four memory banks in an interleave fashion allows random access operation to occur

at higher rate than is possible with standard DRAMs. A sequential and gapless data rate is possible

depending on burst length, CAS latency and speed grade of the device.

Auto Refresh (CBR) and Self Refresh operation are supported. These devices operates with a

single 3.3V +/- 0.3V power supply and are available in TSOPII packages.

INFINEON Technologies

8.00

HYB39S256160CTL-8A相似产品对比

	HYB39S256160CTL-8A	HYB39S256800CTL-8A	1752373-2
描述	Synchronous DRAM, 16MX16, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-54	Synchronous DRAM, 32MX8, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-54	THIS DRAWING IS A CONTROLLED DOCUMENT FOR TYCO ELECTRONICS CORPORATION
是否Rohs认证	不符合	不符合	-
零件包装代码	TSOP2	TSOP2	-
包装说明	TSOP2, TSOP54,.46,32	TSOP2, TSOP54,.46,32	-
针数	54	54	-
Reach Compliance Code	unknown	unknown	-
ECCN代码	EAR99	EAR99	-
访问模式	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	-
最长访问时间	6 ns	6 ns	-
其他特性	AUTO/SELF REFRESH	AUTO/SELF REFRESH	-
最大时钟频率 (fCLK)	125 MHz	125 MHz	-
I/O 类型	COMMON	COMMON	-
交错的突发长度	1,2,4,8	1,2,4,8	-
JESD-30 代码	R-PDSO-G54	R-PDSO-G54	-
JESD-609代码	e0	e0	-
长度	22.22 mm	22.22 mm	-
内存密度	268435456 bit	268435456 bit	-
内存集成电路类型	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	-
内存宽度	16	8	-
功能数量	1	1	-
端口数量	1	1	-
端子数量	54	54	-
字数	16777216 words	33554432 words	-
字数代码	16000000	32000000	-
工作模式	SYNCHRONOUS	SYNCHRONOUS	-
最高工作温度	70 °C	70 °C	-
组织	16MX16	32MX8	-
输出特性	3-STATE	3-STATE	-
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	-
封装代码	TSOP2	TSOP2	-
封装等效代码	TSOP54,.46,32	TSOP54,.46,32	-
封装形状	RECTANGULAR	RECTANGULAR	-
封装形式	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	-
峰值回流温度（摄氏度）	NOT SPECIFIED	NOT SPECIFIED	-
电源	3.3 V	3.3 V	-
认证状态	Not Qualified	Not Qualified	-
刷新周期	8192	8192	-
座面最大高度	1.2 mm	1.2 mm	-
自我刷新	YES	YES	-
连续突发长度	1,2,4,8,FP	1,2,4,8,FP	-
最大待机电流	0.002 A	0.002 A	-
最大压摆率	0.22 mA	0.22 mA	-
最大供电电压 (Vsup)	3.6 V	3.6 V	-
最小供电电压 (Vsup)	3 V	3 V	-
标称供电电压 (Vsup)	3.3 V	3.3 V	-
表面贴装	YES	YES	-
技术	CMOS	CMOS	-
温度等级	COMMERCIAL	COMMERCIAL	-
端子面层	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	-
端子形式	GULL WING	GULL WING	-
端子节距	0.8 mm	0.8 mm	-
端子位置	DUAL	DUAL	-
处于峰值回流温度下的最长时间	NOT SPECIFIED	NOT SPECIFIED	-
宽度	10.16 mm	10.16 mm	-
Base Number Matches	1	1	-

HYB39S256160CTL-8A

HYB39S256160CTL-8A概述

HYB39S256160CTL-8A规格参数

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