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MMSZ4679T3G

产品描述2V, 0.5W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, ROHS COMPLIANT, PLASTIC, CASE 425-04, 2 PIN
产品类别分立半导体    二极管   
文件大小119KB,共6页
制造商ON Semiconductor(安森美)
官网地址http://www.onsemi.cn
标准
下载文档 详细参数 全文预览

MMSZ4679T3G概述

2V, 0.5W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, ROHS COMPLIANT, PLASTIC, CASE 425-04, 2 PIN

MMSZ4679T3G规格参数

参数名称属性值
是否无铅不含铅
是否Rohs认证符合
厂商名称ON Semiconductor(安森美)
包装说明R-PDSO-G2
针数2
制造商包装代码CASE 425-04
Reach Compliance Codecompliant
ECCN代码EAR99
Is SamacsysN
配置SINGLE
二极管元件材料SILICON
二极管类型ZENER DIODE
JESD-30 代码R-PDSO-G2
JESD-609代码e3
元件数量1
端子数量2
最高工作温度150 °C
最低工作温度-55 °C
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
峰值回流温度(摄氏度)260
极性UNIDIRECTIONAL
最大功率耗散0.5 W
认证状态Not Qualified
标称参考电压2 V
表面贴装YES
技术ZENER
端子面层Matte Tin (Sn)
端子形式GULL WING
端子位置DUAL
处于峰值回流温度下的最长时间10
最大电压容差5%
工作测试电流0.05 mA
Base Number Matches1

文档预览

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MMSZ4xxxT1G Series,
SZMMSZ4xxxT1G Series
Zener Voltage Regulators
500 mW SOD−123 Surface Mount
Three complete series of Zener diodes are offered in the convenient,
surface mount plastic SOD−123 package. These devices provide a
convenient alternative to the leadless 34−package style.
Features
http://onsemi.com
500 mW Rating on FR−4 or FR−5 Board
Wide Zener Reverse Voltage Range
1.8 V to 43 V
Package Designed for Optimal Automated Board Assembly
Small Package Size for High Density Applications
ESD Rating of Class 3 (> 16 kV) per Human Body Model
SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
These Devices are Pb−Free and are RoHS Compliant*
Mechanical Characteristics:
CASE:
Void-free, transfer-molded, thermosetting plastic case
FINISH:
Corrosion resistant finish, easily solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
SOD−123
CASE 425
STYLE 1
1
Cathode
2
Anode
MARKING DIAGRAM
1
260°C for 10 Seconds
POLARITY:
Cathode indicated by polarity band
FLAMMABILITY RATING:
UL 94 V−0
MAXIMUM RATINGS
Rating
Total Power Dissipation on FR−5 Board,
(Note 1) @ T
L
= 75°C
Derated above 75°C
Thermal Resistance, (Note 2)
Junction−to−Ambient
Thermal Resistance, (Note 2)
Junction−to−Lead
Junction and Storage Temperature Range
Symbol
P
D
Max
500
6.7
340
150
−55
to
+150
Units
mW
mW/°C
°C/W
°C/W
°C
xx M
G
G
xx
M
G
= Device Code (Refer to page 3)
= Date Code
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
MMSZ4xxxT1G
SZMMSZ4xxxT1G
MMSZ4xxxT3G
SZMMSZ4xxxT3G
Package
SOD−123
(Pb−Free)
SOD−123
(Pb−Free)
SOD−123
(Pb−Free)
SOD−123
(Pb−Free)
Shipping
3,000 /
Tape & Reel
3,000 /
Tape & Reel
10,000 /
Tape & Reel
10,000 /
Tape & Reel
R
qJA
R
qJL
T
J
, T
stg
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−5 = 3.5 X 1.5 inches, using the minimum recommended footprint.
2. Thermal Resistance measurement obtained via infrared Scan Method.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
DEVICE MARKING INFORMATION
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
See specific marking information in the device marking
column of the Electrical Characteristics table on page 3 of
this data sheet.
©
Semiconductor Components Industries, LLC, 2013
November, 2013
Rev. 10
1
Publication Order Number:
MMSZ4678T1/D
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