HM51W16160B Series
HM51W18160B Series
1048576-word
×
16-bit Dynamic Random Access Memory
ADE-203-538 (Z)
Preliminary
Rev. 0.0
Mar. 11, 1996
Description
The Hitachi HM51W16160B Series, HM51W18160B Series are CMOS dynamic RAMs
organized as 1,048,576-word
×
16-bit. They employ the most advanced CMOS technology
for high performance and low power. The HM51W16160B Series, HM51W18160B Series
offer Fast Page Mode as a high speed access mode.
Features
•
Single 3.3 V (±0.3 V)
•
High speed
Access time: 60 ns/70 ns/80 ns (max)
•
Low power dissipation
Active mode :
360 mW/324 mW/288 mW (max) (HM51W16160B Series)
612 mW/540 mW/468 mW (max) (HM51W18160B Series)
Standby mode : 7.2 mW (max)
: 0.54 mW (max) (L-version)
•
Fast page mode capability
•
Long refresh period
4096 refresh cycles
: 64 ms (HM51W16160B Series)
: 128 ms (L-version)
1024 refresh cycles
: 16 ms (HM51W18160B Series)
: 128 ms (L-version)
Preliminary: This document contains information on a new product. Specifications and
information contained herein are subject to change without notice.
This specification is fully compatible with the 16-Mbit DRAM specifications from TEXAS
INSTRUMENTS.
HM51W16160B Series, HM51W18160B Series
•
4 variations of refresh
CAS
-before-
RAS
refresh
Hidden refresh
Self refresh (L-version)
•
2
CAS
-byte control
•
Battery backup operation (L-version)
Ordering Information
Type No.
HM51W16160BJ-6
HM51W16160BJ-7
HM51W16160BJ-8
HM51W16160BLJ-6
HM51W16160BLJ-7
HM51W16160BLJ-8
HM51W18160BJ-6
HM51W18160BJ-7
HM51W18160BJ-8
HM51W18160BLJ-6
HM51W18160BLJ-7
HM51W18160BLJ-8
HM51W16160BTT-6
HM51W16160BTT-7
HM51W16160BTT-8
HM51W16160BLTT-6
HM51W16160BLTT-7
HM51W16160BLTT-8
HM51W18160BTT-6
HM51W18160BTT-7
HM51W18160BTT-8
HM51W18160BLTT-6
HM51W18160BLTT-7
HM51W18160BLTT-8
Access time
60 ns
70 ns
80 ns
60 ns
70 ns
80 ns
60 ns
70 ns
80 ns
60 ns
70 ns
80 ns
60 ns
70 ns
80 ns
60 ns
70 ns
80 ns
60 ns
70 ns
80 ns
60 ns
70 ns
80 ns
400-mil 50-pin plastic TSOP II (TTP-50/44DC)
Package
400-mil 42-pin plastic SOJ (CP-42D)
RAS
-only refresh
2
HM51W16160B Series, HM51W18160B Series
Pin Arrangement
HM51W16160BJ/BLJ Series
V
CC
I/O0
I/O1
I/O2
I/O3
V
CC
I/O4
I/O5
I/O6
I/O7
NC
NC
WE
RAS
A11
A10
A0
A1
A2
A3
V
CC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
(Top view)
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
HM51W16160BTT/BLTT Series
V
CC
I/O0
I/O1
I/O2
I/O3
V
CC
I/O4
I/O5
I/O6
I/O7
NC
1
2
3
4
5
6
7
8
9
10
11
50
49
48
47
46
45
44
43
42
41
40
V
SS
I/O15
I/O14
I/O13
I/O12
V
SS
I/O11
I/O10
I/O9
I/O8
NC
V
SS
I/O15
I/O14
I/O13
I/O12
V
SS
I/O11
I/O10
I/O9
I/O8
NC
LCAS
UCAS
OE
A9
A8
A7
A6
A5
A4
V
SS
NC
NC
WE
RAS
A11
A10
A0
A1
A2
A3
V
CC
15
16
17
18
19
20
21
22
23
24
25
(Top view)
36
35
34
33
32
31
30
29
28
27
26
NC
LCAS
UCAS
OE
A9
A8
A7
A6
A5
A4
V
SS
Pin Description
Pin name
A0 to A11
Function
Address input
—
Row/Refresh address A0 to A11
—
Column address
A0 to A7
Data input/Data output
Row address strobe
Column address strobe
Read/Write enable
Output enable
Power supply
Ground
No connection
I/O0 to I/O15
RAS
UCAS, LCAS
WE
OE
V
CC
V
SS
NC
3
HM51W16160B Series, HM51W18160B Series
Pin Arrangement
HM51W18160BJ/BLJ Series
V
CC
I/O0
I/O1
I/O2
I/O3
V
CC
I/O4
I/O5
I/O6
I/O7
NC
NC
WE
RAS
NC
NC
A0
A1
A2
A3
V
CC
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
(Top view)
V
SS
I/O15
I/O14
I/O13
I/O12
V
SS
I/O11
I/O10
I/O9
I/O8
NC
LCAS
UCAS
OE
A9
A8
A7
A6
A5
A4
V
SS
HM51W18160BTT/BLTT Series
V
CC
I/O0
I/O1
I/O2
I/O3
V
CC
I/O4
I/O5
I/O6
I/O7
NC
1
2
3
4
5
6
7
8
9
10
11
50
49
48
47
46
45
44
43
42
41
40
V
SS
I/O15
I/O14
I/O13
I/O12
V
SS
I/O11
I/O10
I/O9
I/O8
NC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
NC
NC
WE
RAS
NC
NC
A0
A1
A2
A3
V
CC
15
16
17
18
19
20
21
22
23
24
25
(Top view)
36
35
34
33
32
31
30
29
28
27
26
NC
LCAS
UCAS
OE
A9
A8
A7
A6
A5
A4
V
SS
Pin Description
Pin name
A0 to A9
Function
Address input
—
Row/Refresh address A0 to A9
—
Column address
A0 to A9
Data input/Data output
Row address strobe
Column address strobe
Read/Write enable
Output enable
Power supply
Ground
No connection
I/O0 to I/O15
RAS
UCAS, LCAS
WE
OE
V
CC
V
SS
NC
4
HM51W16160B Series, HM51W18160B Series
Block Diagram
RAS
RAS
control
circuit
UCAS
UCAS
control
circuit
LCAS
LCAS
control
circuit
WE
WE
control
circuit
OE
OE
control
circuit
I/O0
I/O0 buffer
I/O1
I/O1 buffer
I/O4
I/O4 buffer
I/O5
I/O5 buffer
Sense amp. & I/O bus
circuit
Sense amp. & I/O bus
256k memory cell array
Sense amp. & I/O bus
256k memory cell array
Sense amp. & I/O bus
256k memory cell array
Sense amp. & I/O bus
256k memory cell array
Sense amp. & I/O bus
256k memory cell array
Sense amp. & I/O bus
256k memory cell array
Sense amp. & I/O bus
256k memory cell array
Sense amp. & I/O bus
256k memory cell array
Sense amp. & I/O bus
256k memory cell array
Sense amp. & I/O bus
256k memory cell array
Sense amp. & I/O bus
256k memory cell array
Sense amp. & I/O bus
256k memory cell array
Sense amp. & I/O bus
256k memory cell array
Sense amp. & I/O bus
256k memory cell array
Sense amp. & I/O bus
256k memory cell array
Sense amp. & I/O bus
256k memory cell array
Sense amp. & I/O bus
256k memory cell array
Sense amp. & I/O bus
256k memory cell array
Sense amp. & I/O bus
256k memory cell array
Sense amp. & I/O bus
256k memory cell array
Sense amp. & I/O bus
256k memory cell array
Sense amp. & I/O bus
256k memory cell array
Sense amp. & I/O bus
256k memory cell array
Sense amp. & I/O bus
256k memory cell array
Sense amp. & I/O bus
256k memory cell array
Sense amp. & I/O bus
256k memory cell array
Sense amp. & I/O bus
256k memory cell array
Sense amp. & I/O bus
256k memory cell array
Sense amp. & I/O bus
256k memory cell array
Sense amp. & I/O bus
256k memory cell array
Sense amp. & I/O bus
256k memory cell array
Sense amp. & I/O bus
256k memory cell array
Sense amp. & I/O bus
I/O10 buffer
I/O10
I/O11 buffer
I/O11
Row decoder & driver
Row decoder & driver
I/O14 buffer
I/O14
I/O15 buffer
I/O15
Column decoder & driver
Sense amp. & I/O bus
256k memory cell array
Sense amp. & I/O bus
256k memory cell array
Sense amp. & I/O bus
256k memory cell array
Sense amp. & I/O bus
256k memory cell array
Sense amp. & I/O bus
256k memory cell array
Sense amp. & I/O bus
256k memory cell array
Sense amp. & I/O bus
256k memory cell array
Sense amp. & I/O bus
256k memory cell array
Sense amp. & I/O bus
256k memory cell array
Sense amp. & I/O bus
256k memory cell array
Sense amp. & I/O bus
256k memory cell array
Sense amp. & I/O bus
256k memory cell array
Sense amp. & I/O bus
256k memory cell array
Sense amp. & I/O bus
256k memory cell array
Sense amp. & I/O bus
256k memory cell array
Sense amp. & I/O bus
256k memory cell array
Sense amp. & I/O bus
Peripheral
Column decoder & driver
Sense amp. & I/O bus
256k memory cell array
Sense amp. & I/O bus
256k memory cell array
Sense amp. & I/O bus
256k memory cell array
Sense amp. & I/O bus
256k memory cell array
Sense amp. & I/O bus
256k memory cell array
Sense amp. & I/O bus
256k memory cell array
Sense amp. & I/O bus
256k memory cell array
Sense amp. & I/O bus
256k memory cell array
Sense amp. & I/O bus
256k memory cell array
Sense amp. & I/O bus
256k memory cell array
Sense amp. & I/O bus
256k memory cell array
Sense amp. & I/O bus
256k memory cell array
Sense amp. & I/O bus
256k memory cell array
Sense amp. & I/O bus
256k memory cell array
Sense amp. & I/O bus
256k memory cell array
Sense amp. & I/O bus
256k memory cell array
Sense amp. & I/O bus
I/O2
I/O2 buffer
I/O8 buffer
I/O8
Row decoder & driver
I/O3
I/O3 buffer
Row decoder & driver
I/O9 buffer
I/O9
I/O6
I/O6 buffer
I/O12 buffer
I/O12
I/O7
I/O7 buffer
I/O13 buffer
I/O13
Column address buffer
Row address buffer
Address A0 to A7 : HM51W16160B
Address A0 to A9: HM51W18160B
Address A0 to A11: HM51W16160B
Address A0 to A9: HM51W18160B
5
DSP 与 ARM 处理器
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