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MX29LV320ABXEI-90G

产品描述32M-BIT [4M x 8 / 2M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY
产品类别存储    存储   
文件大小616KB,共60页
制造商Macronix
官网地址http://www.macronix.com/en-us/Pages/default.aspx
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MX29LV320ABXEI-90G概述

32M-BIT [4M x 8 / 2M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY

MX29LV320ABXEI-90G规格参数

参数名称属性值
厂商名称Macronix
零件包装代码BGA
包装说明TFBGA, BGA48,6X8,32
针数48
Reach Compliance Codeunknow
ECCN代码3A991.B.1.A
最长访问时间90 ns
备用内存宽度8
启动块BOTTOM
命令用户界面YES
通用闪存接口YES
数据轮询YES
JESD-30 代码R-PBGA-B48
JESD-609代码e1
长度8 mm
内存密度33554432 bi
内存集成电路类型FLASH
内存宽度16
湿度敏感等级2A
功能数量1
部门数/规模8,63
端子数量48
字数2097152 words
字数代码2000000
工作模式ASYNCHRONOUS
最高工作温度85 °C
最低工作温度-40 °C
组织2MX16
封装主体材料PLASTIC/EPOXY
封装代码TFBGA
封装等效代码BGA48,6X8,32
封装形状RECTANGULAR
封装形式GRID ARRAY, THIN PROFILE, FINE PITCH
并行/串行PARALLEL
峰值回流温度(摄氏度)260
电源3/3.3 V
编程电压3 V
认证状态Not Qualified
就绪/忙碌YES
座面最大高度1.2 mm
部门规模8K,64K
最大待机电流0.000015 A
最大压摆率0.03 mA
最大供电电压 (Vsup)3.6 V
最小供电电压 (Vsup)2.7 V
标称供电电压 (Vsup)3 V
表面贴装YES
技术CMOS
温度等级INDUSTRIAL
端子面层TIN SILVER COPPER
端子形式BALL
端子节距0.8 mm
端子位置BOTTOM
处于峰值回流温度下的最长时间40
切换位YES
类型NOR TYPE
宽度6 mm

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MX29LV320AT/B
32M-BIT [4M x 8 / 2M x 16] SINGLE VOLTAGE
3V ONLY FLASH MEMORY
FEATURES
GENERAL FEATURES
• 4,194,304 x 8 / 2,097,152 x 16 switchable
• Sector Structure
- 8K-Byte x 8 and 64K-Byte x 63
• Extra 64K-Byte sector for security
- Features factory locked and identifiable, and cus-
tomer lockable
• Twenty-Four Sector Groups
- Provides sector group protect function to prevent pro-
gram or erase operation in the protected sector group
- Provides chip unprotect function to allow code chang-
ing
- Provides temporary sector group unprotect function
for code changing in previously protected sector groups
• Single Power Supply Operation
- 2.7 to 3.6 volt for read, erase, and program opera-
tions
• Latch-up protected to 250mA from -1V to Vcc + 1V
• Low Vcc write inhibit is equal to or less than 1.4V
• Compatible with JEDEC standard
- Pinout and software compatible to single power sup-
ply Flash
2nd generation of 3V/32M Flash product
- Fully compatible with MX29LV320T/B device
PERFORMANCE
• High Performance
- Fast access time: 70/90ns
- Fast program time: 7us/word typical utilizing acceler-
ate function
- Fast erase time: 0.9s/sector, 35s/chip (typical)
• Low Power Consumption
- Low active read current: 10mA (typical) at 5MHz
- Low standby current: 200nA (typical)
• Minimum 100,000 erase/program cycle
• 10 years data retention
SOFTWARE FEATURES
• Erase Suspend/ Erase Resume
- Suspends sector erase operation to read data from
or program data to another sector which is not being
erased
• Status Reply
- Data polling & Toggle bits provide detection of pro-
gram and erase operation completion
• Support Common Flash Interface (CFI)
HARDWARE FEATURES
• Ready/Busy (RY/BY) Output
- Provides a hardware method of detecting program
and erase operation completion
• Hardware Reset (RESET) Input
- Provides a hardware method to reset the internal state
machine to read mode
• WP/ACC input pin
- Provides accelerated program capability
PACKAGE
• 48-Pin TSOP
• 48-Ball CSP
GENERAL DESCRIPTION
The MX29LV320AT/B is a 32-mega bit Flash memory
organized as 4M bytes of 8 bits and 2M words of 16 bits.
MXIC's Flash memories offer the most cost-effective and
reliable read/write non-volatile random access memory.
The MX29LV320AT/B is packaged in 48-pin TSOP and
48-ball CSP. It is designed to be reprogrammed and
erased in system or in standard EPROM programmers.
The standard MX29LV320AT/B offers access time as
fast as 70ns, allowing operation of high-speed micropro-
cessors without wait states. To eliminate bus conten-
tion, the MX29LV320AT/B has separate chip enable (CE)
and output enable (OE) controls.
P/N:PM1008
MXIC's Flash memories augment EPROM functionality
with in-circuit electrical erasure and programming. The
MX29LV320AT/B uses a command register to manage
this functionality.
MXIC Flash technology reliably stores memory
contents even after 100,000 erase and program
cycles. The MXIC cell is designed to optimize the
erase and program mechanisms. In addition, the
combination of advanced tunnel oxide processing
and low internal electric fields for erase and
programming operations produces reliable cycling.
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