Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT PACKAGE-3
| 参数名称 | 属性值 |
| 是否Rohs认证 | 符合 |
| 包装说明 | SMALL OUTLINE, R-PDSO-G3 |
| Reach Compliance Code | compliant |
| 其他特性 | BUILT-IN BIAS RESISTOR RATIO IS 1 |
| 最大集电极电流 (IC) | 0.1 A |
| 集电极-发射极最大电压 | 50 V |
| 配置 | SINGLE WITH BUILT-IN RESISTOR |
| 最小直流电流增益 (hFE) | 30 |
| JESD-30 代码 | R-PDSO-G3 |
| 湿度敏感等级 | 1 |
| 元件数量 | 1 |
| 端子数量 | 3 |
| 最高工作温度 | 150 °C |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR |
| 封装形式 | SMALL OUTLINE |
| 峰值回流温度（摄氏度） | NOT SPECIFIED |
| 极性/信道类型 | NPN |
| 表面贴装 | YES |
| 端子形式 | GULL WING |
| 端子位置 | DUAL |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED |
| 晶体管应用 | SWITCHING |
| 晶体管元件材料 | SILICON |
| 标称过渡频率 (fT) | 130 MHz |
| Base Number Matches | 1 |
| BCR133B6327 | P-0402E2701GGWS | BCR133E6327 | BCR133WE6327 | BCR133SH6433 | |
|---|---|---|---|---|---|
| 描述 | Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT PACKAGE-3 | RESISTOR, THIN FILM, 0.05 W, 2 %, 25 ppm, 2700 ohm, SURFACE MOUNT, 0402, CHIP, ROHS COMPLIANT | Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon | Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon | Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon, ROHS COMPLIANT PACKAGE-6 |
| 包装说明 | SMALL OUTLINE, R-PDSO-G3 | SMT, 0402 | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G6 |
| Reach Compliance Code | compliant | not_compliant | compliant | compliant | compliant |
| 其他特性 | BUILT-IN BIAS RESISTOR RATIO IS 1 | ANTI-SULFUR, FLAME PROOF, NON-INDUCTIVE | BUILT-IN BIAS RESISTOR RATIO IS 1 | BUILT-IN BIAS RESISTOR RATIO IS 1 | BUILT-IN BIAS RESISTOR RATIO IS 1 |
| 端子数量 | 3 | 2 | 3 | 3 | 6 |
| 封装形式 | SMALL OUTLINE | SMT | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE |
| 表面贴装 | YES | YES | YES | YES | YES |
| 是否Rohs认证 | 符合 | 符合 | 符合 | 符合 | - |
| 最大集电极电流 (IC) | 0.1 A | - | 0.1 A | 0.1 A | 0.1 A |
| 集电极-发射极最大电压 | 50 V | - | 50 V | 50 V | 50 V |
| 配置 | SINGLE WITH BUILT-IN RESISTOR | - | SINGLE WITH BUILT-IN RESISTOR | SINGLE WITH BUILT-IN RESISTOR | SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR |
| 最小直流电流增益 (hFE) | 30 | - | 30 | 30 | 30 |
| JESD-30 代码 | R-PDSO-G3 | - | R-PDSO-G3 | R-PDSO-G3 | R-PDSO-G6 |
| 湿度敏感等级 | 1 | - | 1 | 1 | - |
| 元件数量 | 1 | - | 1 | 1 | 2 |
| 封装主体材料 | PLASTIC/EPOXY | - | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR | - | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 峰值回流温度（摄氏度） | NOT SPECIFIED | - | 260 | 260 | - |
| 极性/信道类型 | NPN | - | NPN | NPN | NPN |
| 端子形式 | GULL WING | - | GULL WING | GULL WING | GULL WING |
| 端子位置 | DUAL | - | DUAL | DUAL | DUAL |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED | - | 40 | 40 | - |
| 晶体管应用 | SWITCHING | - | SWITCHING | SWITCHING | SWITCHING |
| 晶体管元件材料 | SILICON | - | SILICON | SILICON | SILICON |
| 标称过渡频率 (fT) | 130 MHz | - | 130 MHz | 130 MHz | 130 MHz |
| Base Number Matches | 1 | - | 1 | 1 | 1 |
| ECCN代码 | - | EAR99 | EAR99 | EAR99 | - |
| JESD-609代码 | - | e4 | e3 | e3 | - |
| 端子面层 | - | Gold (Au) - with Nickel (Ni) barrier | MATTE TIN | MATTE TIN | - |
| 厂商名称 | - | - | Infineon(英飞凌) | Infineon(英飞凌) | Infineon(英飞凌) |
| Is Samacsys | - | - | N | N | N |
ADI参考电路
DSP 与 ARM 处理器
汽车电子
微控制器 MCU
DSP 与 ARM 处理器
嵌入式系统
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