3.5A, 100V, 0.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, METAL CAN, TO-205AF, 3 PIN
参数名称 | 属性值 |
是否Rohs认证 | 不符合 |
零件包装代码 | BCY |
包装说明 | HERMETIC SEALED, METAL CAN-3 |
针数 | 4 |
Reach Compliance Code | not_compliant |
ECCN代码 | EAR99 |
其他特性 | RADIATION HARDENED |
配置 | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压 | 100 V |
最大漏极电流 (Abs) (ID) | 3.5 A |
最大漏极电流 (ID) | 3.5 A |
最大漏源导通电阻 | 0.6 Ω |
FET 技术 | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码 | TO-205AF |
JESD-30 代码 | O-MBCY-W3 |
JESD-609代码 | e0 |
元件数量 | 1 |
端子数量 | 3 |
工作模式 | ENHANCEMENT MODE |
最高工作温度 | 150 °C |
封装主体材料 | METAL |
封装形状 | ROUND |
封装形式 | CYLINDRICAL |
极性/信道类型 | N-CHANNEL |
最大功率耗散 (Abs) | 15 W |
最大脉冲漏极电流 (IDM) | 10.5 A |
认证状态 | Not Qualified |
表面贴装 | NO |
端子面层 | Tin/Lead (Sn/Pb) |
端子形式 | WIRE |
端子位置 | BOTTOM |
晶体管应用 | SWITCHING |
晶体管元件材料 | SILICON |
Base Number Matches | 1 |
FSL110R3 | FSL110R4 | FSL110D3 | FSL110D1 | FSL110R1 | |
---|---|---|---|---|---|
描述 | 3.5A, 100V, 0.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, METAL CAN, TO-205AF, 3 PIN | 3.5A, 100V, 0.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, METAL CAN, TO-205AF, 3 PIN | 3.5A, 100V, 0.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, METAL CAN-3 | 3.5A, 100V, 0.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, METAL CAN-3 | 3.5A, 100V, 0.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, METAL CAN, TO-205AF, 3 PIN |
是否Rohs认证 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 |
零件包装代码 | BCY | BCY | BCY | BCY | BCY |
包装说明 | HERMETIC SEALED, METAL CAN-3 | HERMETIC SEALED, METAL CAN-3 | HERMETIC SEALED, METAL CAN-3 | HERMETIC SEALED, METAL CAN-3 | HERMETIC SEALED, METAL CAN-3 |
针数 | 4 | 4 | 4 | 4 | 4 |
Reach Compliance Code | not_compliant | _compli | not_compliant | not_compliant | not_compliant |
ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
配置 | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压 | 100 V | 100 V | 100 V | 100 V | 100 V |
最大漏极电流 (ID) | 3.5 A | 3.5 A | 3.5 A | 3.5 A | 3.5 A |
最大漏源导通电阻 | 0.6 Ω | 0.6 Ω | 0.6 Ω | 0.6 Ω | 0.6 Ω |
FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码 | TO-205AF | TO-205AF | TO-205AF | TO-205AF | TO-205AF |
JESD-30 代码 | O-MBCY-W3 | O-MBCY-W3 | O-MBCY-W3 | O-MBCY-W3 | O-MBCY-W3 |
元件数量 | 1 | 1 | 1 | 1 | 1 |
端子数量 | 3 | 3 | 3 | 3 | 3 |
工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
封装主体材料 | METAL | METAL | METAL | METAL | METAL |
封装形状 | ROUND | ROUND | ROUND | ROUND | ROUND |
封装形式 | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL |
极性/信道类型 | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
最大脉冲漏极电流 (IDM) | 10.5 A | 10.5 A | 10.5 A | 10.5 A | 10.5 A |
认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
表面贴装 | NO | NO | NO | NO | NO |
端子形式 | WIRE | WIRE | WIRE | WIRE | WIRE |
端子位置 | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM |
晶体管应用 | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
晶体管元件材料 | SILICON | SILICON | SILICON | SILICON | SILICON |
其他特性 | RADIATION HARDENED | RADIATION HARDENED | - | - | RADIATION HARDENED |
最大漏极电流 (Abs) (ID) | 3.5 A | 3.5 A | 3.5 A | 3.5 A | - |
JESD-609代码 | e0 | e0 | e0 | e0 | - |
最高工作温度 | 150 °C | 150 °C | 150 °C | 150 °C | - |
最大功率耗散 (Abs) | 15 W | 15 W | 15 W | 15 W | - |
端子面层 | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | - |
厂商名称 | - | Renesas(瑞萨电子) | Renesas(瑞萨电子) | Renesas(瑞萨电子) | Renesas(瑞萨电子) |
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