The NDL5421P Series is an InGaAs PIN photo diode module
with multimode fiber. It is designed for 2.5 Gb/s optical fiber
communication systems and covers the wavelength range
between 1000 and 1600 with high efficiency.
ELECTRO-OPTICAL CHARACTERISTICS
(T
C
= 25°C)
PART NUMBER
PACKAGE OUTLINE
SYMBOLS
I
D
C
t
η
S
f
C
PARAMETERS AND CONDITIONS
Dark Current, V
R
= 5 V
Terminal Capacitance, V
R
= 5 V, f = 1 MHz
Quantum Efficiency,
λ
= 1300 nm
λ
= 1550 nm
Responsivity,
λ
= 1300 nm
λ
= 1550 nm
UNITS
nA
pF
%
A/W
GHz
75
64
0.78
0.80
2.5
MIN
NDL5421P Series
TYP
0.1
0.7
86
75
0.89
0.94
MAX
1.0
0.9
Cut-off Frequency, V
R
= 5 V,
λ
= 1300 nm,
R
L
= 50
Ω
California Eastern Laboratories
NDL5421P SERIES
ABSOLUTE MAXIMUM RATINGS
1
(T
C
= 25°C, unless otherwise specified)
SYMBOLS
V
R
I
F
P
IN
T
C
T
STG
PARAMETERS
Reverse Voltage
Forward Current
Optical Input Power
Operating Case Temp.
Storage Temperature
UNITS
V
mA
mW
°C
°C
RATINGS
20
10
8
-40 to +85
-40 to +85
Note:
1. Operation in excess of any one of these parameters may result
in permanent damage.
TYPICAL PERFORMANCE CURVES
(T
C
= 25°C, unless otherwise specified)
WAVELENGTH DEPENDENCE OF
QUANTUM EFFICIENCY
TEMPERATURE DEPENDENCE OF
RESPONSIVITY
Responsivity (Relative Value),
∆S/S
(%)
100
10
λ
= 1300 nm
Quantum Efficiency,
η
(%)
80
60
0
40
20
0
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
-10
-60
-40
-20
0
20
40
60
80
100
Wavelength,
λ
(µm)
Operating Case Temperature, T
C
(°C)
REVERSE VOLTAGE DEPENDENCE
OF DARK CURRENT
10
TEMPERATURE DEPENDENCE
OF DARK CURRENT
10
1
V
R
= 5 V
1.0
T
C
= 75°C
50°C
Dark Current, I
D
(nA)
Dark Current,I
D
(nA)
10
0
0.1
25°C
10
-1
0°C
0.01
-25°C
10
-2
0.001
0
10
20
10
-3
-60
-40
-20
0
20
40
60
80
100
Reverse Voltage, V
R
(V)
Operating Case Temperature, T
C
(°C)
NDL5421P SERIES
TYPICAL PERFORMANCE CURVES
(T
C
= 25°C, unless otherwise specified)
REVERSE VOLTAGE DEPENDENCE
OF TERMINAL CAPACITANCE
2
f = 1.0 MHz
12
9
6
FREQUENCY RESPONSE
V
R
= 5 V
λ
= 1300 nm
P
IN
= -10dB
R
L
= 50
Ω
Terminal Capacitance, C
t
(pF)
1
Response (dB)
3
0
-3
-6
-9
-12
0.5
0.3
0.1
0.3
1
3
10
-15
0
2.5
5.0
Reverse Voltage, V
R
(V)
Frequency, f (GHz)
ORDERING INFORMATION
PART NUMBER AVAILABLE CONNECTOR
DESCRIPTION
NDL5421P
Without Connector
GI-50/125
No Flange
NDL5421PC
With FC-PC Connector
NDL5421PD
NDL5421PS
NDL5421PSC
NDL5421PSD
NDL5421P1
NDL5421P1C
NDL5421P1D
NDL5421PS1
NDL5421P1SC
NDL5421P1SD
NDL5421P2
NDL5421P2C
NDL5421P2D
NDL5421PS2
NDL5421P2SC
NDL5421P2SD
With SC-PC Connector
Without Connector
With FC-PC Connector
With SC-PC Connector
Without Connector
With FC-PC Connector
With SC-PC Connector
Without Connector
With FC-PC Connector
With SC-PC Connector
Without Connector
With FC-PC Connector
With SC-PC Connector
Without Connector
With FC-PC Connector
With SC-PC Connector
SM-9/125
GI-50/125
Flat Mount
Flange
SM-9/125
GI-50/125
Vertical
Flange
SM-9/125
NDL5421P SERIES
OUTLINE DIMENSIONS
(Units in mm)
NDL5421P
NDL5421P1
Optical Fiber
GI-50/125
Length: 1 m MIN
Shrunk Tube
Optical Fiber
GI-50/125
Length: 1 m MIN
Shrunk Tube
φ2.5
30.0 MAX
φ6.0
- 0.1
+0.0
φ2.5
14.0±0.1
30.0 MAX
6.9±0.3
φ6.0
- 0.1
12.5 MIN
φ0.45
3
1
+0.0
6.9±0.3
4.0±0.1
3.9±0.5
2-φ2.2
12.5 MIN
6.0
- 0.1
+0.0
2
7.0±0.3
3.0±0.3
φ2.0
1.5
2
3
1
4.0±0.3
φ2.0
18.0±0.1
3
1
PIN CONNECTIONS
1. Anode (Negative)
2. Cathode (Positive)
3. Case
NDL5421P2
2
Optical Fiber
GI-50/125
Length: 1 m MIN
Shrunk Tube
φ2.5
30.0 MAX
φ6.0
- 0.1
+0.0
2.5±0.1
0.5±0.1
12.5 MIN
2-φ2.5
2
3
1
7.0±0.15
φ2.0
12.0±0.1
16.0±0.2
NDL5421P SERIES
HANDLING PRECAUTION FOR PD/APD MODULE
The NEC PD/APD module has heat shrink tubing to protect the ferrule edge (*1) and the junction between the ferrule and the module
body (*2). In order to avoid breaking the fiber and/or optical coupling degradation, NEC recommends the following handling
precautions:
1. Do not make the fiber bend radius less than 30 mm (*3).
2. Do not bend the fiber within the 18 mm section from the module body (*4).
3. Do not stress the ferrule with a lateral force exceeding 500 g (*5).
fiber
30 mm MIN (*3)
(*1)
18 mm MIN (*4)
ferrule (*5)
(*2)
module body
EXCLUSIVE NORTH AMERICAN AGENT FOR
RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
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