1000 to 1600 nm OPTICAL
FIBER COMMUNICATIONS
φ50 µm
InGaAs
AVALANCHE PHOTO DIODE MODULE
FEATURES
•
SMALLER DARK CURRENT:
I
D
= 5 nA
•
HIGH QUANTUM EFFICIENCY:
η
= 90% at
λ
= 1300 nm, M = 1
η
= 77% at
λ
= 1550 nm, M = 1
•
HIGH SPEED RESPONSE:
f
C
= 1.2 GHz @ M = 20
•
DETECTING AREA SIZE:
φ
50
µm
•
COAXIAL MODULE WITH MULTIMODE FIBER:
GI-50/125
NDL5551P
SERIES
DESCRIPTION
The NDL5551P Series are InGaAs PIN photo diode modules
with multimode fiber. They are designed for detectors of long
wavelength transmission systems and cover the wavelength
range setween 1000 and 1600 nm.
ELECTRO-OPTICAL CHARACTERISTICS
(T
C
= 25°C)
PART NUMBER
SYMBOLS
V
(BR)R
δ
1
NDL5551P Series
UNITS
V
%/ºC
nA
nA
pF
GHz
%
A/W
1
76
65
0.8
0.81
30
MIN
50
TYP
70
0.2
5
1
0.4
1.5
1.2
90
77
0.94
0.96
40
0.7
5
30
5
0.75
MAX
100
PARAMETERS AND CONDITIONS
Reverse Breakdown Voltage, I
D
=100
µA
Temperature Coefficient of Reverse Breakdown Voltage
Dark Current, V
R
= V
(BR)R
x 0.9
Multiplied Dark Current, M = 2 to 10
Terminal Capacitance, V
R
= V
(BR)R
x 0.9, f = 1 MHz
Cut-off Frequency, M = 10
M = 20
Quantum Efficiency,
λ
= 1300 nm, M = 1
λ
= 1550 nm, M = 1
Responsivity,
λ
= 1300 nm
λ
= 1550 nm
Multiplication Factor,
λ
= 1300 nm, I
PO
= 1.0
µA
V
R
= V (@I
D
= 1
µA)
Excess Noise Exponent,
λ
= 1300 nm, 1550 nm,
I
PO
=1.0
µA,
M = 10, f = 35 MHz, B = 1 MHz
Excess Noise Factor,
λ
= 1300 nm, 1550 nm,
I
PO
=1.0
µA,
M = 10, f = 35 MHz, B = 1 MHz
I
D
I
DM
C
t
f
C
η
S
M
x
F
Note:
1.
δ
=
V
(BR)R
< 25°C +
∆T°C
> - V
(BR)R
<25°C>
∆T°C •
V
(BR)R
<25°C>
California Eastern Laboratories
NDL5551P SERIES
ABSOLUTE MAXIMUM RATINGS
1
(T
C
= 25°C, unless otherwise specified)
SYMBOLS
I
F
I
R
T
C
T
STG
PARAMETERS
Forward Current
Reverse Current
Operating Case Temp.
Storage Temperature
UNITS
mA
mA
°C
°C
RATINGS
10
0.5
-40 to +85
-40 to +85
Note:
1. Operation in excess of any one of these parameters may result
in permanent damage.
TYPICAL PERFORMANCE CURVES
(T
C
= 25°C, unless otherwise specified)
WAVELENGTH DEPENDENCE OF
QUANTUM EFFICIENCY
TEMPERATURE DEPENDENCE OF
RESPONSIVITY
Responsivity (Relative Value),
∆S/S
(%)
100
10
λ
= 1300 nm
Quantum Efficiency,
η
(%)
80
60
0
40
20
0
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
-10
-60
-40
-20
0
20
40
60
80
100
Wavelength,
λ
(µm)
Operating Case Temperature, T
C
(°C)
DARK CURRENT AND PHOTO
CURRENT VS. REVERSE VOLTAGE
Dark Current, Photo Current, I
D
, lph (A)
10
-3
10
-4
-5
10
-6
DARK CURRENT vs.
REVERSE VOLTAGE
λ
= 1300 nm
I
PO
= 1.0
µA
T
C
= 25°C
10
-7
10
Dark Current, I
D
(A)
lph
10
-6
10
-7
-8
T
C
= 85°C
10
-8
T
C
= 65°C
10
-9
T
C
= 25°C
T
C
= -20°C
10
-10
10
10
-9
10
-10
0
20
40
I
D
60
80
100
0
20
40
60
80
100
Reverse Voltage, V
R
(V)
Reverse Voltage, V
R
(V)
NDL5551P SERIES
TYPICAL PERFORMANCE CURVES
(T
C
= 25°C, unless otherwise specified)
MULTIPLICATION FACTOR vs.
REVERSE VOLTAGE
TEMPERATURE DEPENDENCE OF
DARK CURRENT and MULTIPLIED
DARK CURRENT
Dark Current, Multiplied Dark Current I
D
,
I
DM
(A)
10
3
10
-6
λ
= 1300 nm
Multiplication Factor, M
10
-7
T
C
= 65°C
10
2
T
C
= -20°C
ID @ V
R
= 0.9 V
(BR)R
10
-8
10
1
T
C
= 25°C
10
-9
I
DM
T
C
= 85°C
10
-10
10
0
0
20
40
60
80
100
10
-11
-60
-40
-20
0
20
40
60
80
100
Reverse Voltage, V
R
(V)
Operating Case Temperature, T
C
(ºC)
CUT-OFF FREQUENCY vs.
MULTIPLICATION FACTOR
10
T
C
= 25°C
FREQUENCY RESPONSE
λ
= 1300 nm
R
L
= 50Ω
M=8
T
C
= 25°C
Cut-off Frequency, f
C
(GHz)
5.0
Response, (3 dB/div.)
1
0
1.0
2.0
3.0
4.0
0.1
Frequency, f (GHz)
1
10
100
Multiplication Factor, M
TERMINAL CAPACITANCE vs.
REVERSE VOLTAGE
100
2
EXCESS NOISE FACTOR vs.
MULTIPLICATION FACTOR
1300 nm ( ), 1550 nm ( )
f = 35 MHz, B = 1 MHz
Terminal Capacitance, C
t
(pF)
50
Excess Noise Factor, F
0.5
20
0.4
1
10
5
0.5
0.2
2
0.1
1
2
5
10
20
50
100
1
1
2
5
10
20
50
100
Reverse Voltage, V
R
(V)
Multiplication Factor, M
NDL5551P SERIES
OUTLINE DIMENSIONS
(Units in mm)
NDL5551P
NDL5551P1
Optical Fiber
GI-50/125
Length: 1 m MIN
Shrunk Tube
Optical Fiber
GI-50/125
Length: 1 m MIN
Shrunk Tube
φ2.5
30.0 MAX
φ6.0
- 0.1
+0.0
φ2.5
14.0±0.1
30.0 MAX
6.9±0.3
φ6.0
- 0.1
12.5 MIN
φ0.45
3
1
+0.0
6.9±0.3
4.0±0.1
3.9±0.5
12.5 MIN
φ2.2
(2 places)
6.0
- 0.1
+0.0
2
7.0±0.3
3.0±0.3
φ2.0
1.5
2
3
1
4.0±0.3
φ2.0
18.0±0.1
3
1
PIN CONNECTIONS
1. Anode (Negative)
2. Cathode (Positive)
3. Case
NDL5551P2
2
ORDERING INFORMATION
PART NUMBER AVAILABLE CONNECTOR DESCRIPTION
NDL5551P
Without Connector
No Flange
NDL5551PC
With FC-PC Connector
Optical Fiber
GI-50/125
Length: 1 m MIN
Shrunk Tube
NDL5551PD
NDL5551P1
NDL5551P1C
NDL5551P1D
NDL5551P2
NDL5551P2C
NDL5551P2D
With SC-PC Connector
Without Connector
With FC-PC Connector
With SC-PC Connector
Without Connector
With FC-PC Connector
With SC-PC Connector
Flat Mount
Flange
Vertical Flange
φ2.5
30.0 MAX
φ6.0
- 0.1
+0.0
2.5±0.1
0.5±0.1
12.5 MIN
φ2.5
(2 places)
2
3
1
7.0±0.15
φ2.0
12.0±0.1
16.0±0.2
NDL5551P SERIES
HANDLING PRECAUTION FOR PD/APD MODULE
The NEC PD/APD module has heat shrink tubing to protect the ferrule edge (*1) and the junction between the ferrule and the module
body (*2). In order to avoid breaking the fiber and/or optical coupling degradation, NEC recommends the following handling
precautions:
1. Do not make the fiber bend radius less than 30 mm (*3).
2. Do not bend the fiber within the 18 mm section from the module body (*4).
3. Do not stress the ferrule with a lateral force exceeding 500 g (*5).
fiber
30 mm MIN (*3)
(*1)
18 mm MIN (*4)
ferrule (*5)
(*2)
module body
EXCLUSIVE NORTH AMERICAN AGENT FOR
RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
CALIFORNIA EASTERN LABORATORIES
• Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279
24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM
01/17/2001
DATA SUBJECT TO CHANGE WITHOUT NOTICE
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
