2MBI 100PC-140
IGBT MODULE ( P-Series )
n
Features
•
Square SC SOA at 10 x I
C
•
Simplified Parallel Connection
•
Narrow Distribution of Characteristics
•
High Short Circuit Withstand-Capability
2-Pack IGBT
1400V
100A
n
Outline Drawing
n
Applications
•
High Power Switching
•
A.C. Motor Controls
•
D.C. Motor Controls
•
Uninterruptible Power Supply
n
Maximum Ratings and Characteristics
•
Absolute Maximum Ratings
Items
Collector-Emitter Voltage
Gate -Emitter Voltage
( T
c
=25°C
)
Symbols
V
CES
V
GES
Continuous T
C
=25°C
I
C
Continuous T
C
=80°C
1ms
T
C
=25°C
I
C PULSE
1ms
T
C
=80°C
-I
C
1ms
-I
C PULSE
P
C
T
j
T
stg
A.C. 1min.
V
is
Mounting *1
Terminals *2
Ratings
1400
±
20
150
100
300
200
100
200
780
+150
-40
∼
+125
2500
3.5
3.5
Units
V
V
n
Equivalent Circuit
Collector
Current
A
Max. Power Dissipation
Operating Temperature
Storage Temperature
Isolation Voltage
Screw Torque
W
°C
°C
V
Nm
Note:
*1:Recommendable Value; 2.5
∼
3.5 Nm (M5)
•
Electrical Characteristics
Items
Zero Gate Voltage Collector Current
Gate-Emitter Leackage Current
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Input capacitance
Output capacitance
Reverse Transfer capacitance
Turn-on Time
Turn-off Time
Diode Forward On-Voltage
Reverse Recovery Time
( at T
j
=25°C )
Symbols
I
CES
I
GES
V
GE(th)
V
CE(sat)
C
ies
C
oes
C
res
t
ON
t
r
t
OFF
t
f
V
F
t
rr
Test Conditions
V
GE
=0V V
CE
=1400V
V
CE
=0V V
GE
=± 20V
V
GE
=20V I
C
=100mA
T
j
= 25°C V
GE
=15V I
C
=100A
T
j
=125°C V
GE
=15V I
C
=100A
V
GE
=0V
V
CE
=10V
f=1MHz
V
CC
=600V
I
C
=100A
V
GE
=± 15V
R
G
=9.1Ω
I
F
=100A V
GE
=0V
I
F
=100A
Min.
Typ.
Max.
2.0
400
9.0
3.0
Units
mA
µA
V
V
pF
1.2
0.6
1.0
0.3
3.3
350
6.0
8.0
2.7
3.3
10000
1500
650
µs
V
ns
2.4
•
Thermal Characteristics
Items
Thermal Resistance
Symbols
R
th(j-c)
R
th(j-c)
R
th(c-f)
Test Conditions
IGBT
Diode
With Thermal Compound
Min.
Typ.
Max.
0.16
0.33
Units
°C/W
0.025
2MBI 100PC-140
Collector Current vs. Collector-Emitter Voltage
250
T
j
= 2 5 ° C
250
T
j
= 1 2 5 ° C
V
G E
= 2 0 V 1 5 V
2-Pack IGBT
1400V
100A
Collector Current vs. Collector-Emitter Voltage
[A]
[A]
200
200
V
GE
= 2 0 V 1 5 V
12V
12V
150
C
Collector Current : I
Collector Current : I
C
150
100
11V
100
11V
50
10V
0
0
1
2
3
4
5
Collector-Emitter Voltage : V
CE
[V]
6
50
10V
0
0
1
2
3
4
5
Collector-Emitter Voltage : V
CE
[V]
6
Collector-Emitter vs. Gate-Emitter Voltage
T
j
= 2 5 ° C
Collector-Emitter vs. Gate-Emitter Voltage
T
j
= 1 2 5 ° C
[V]
CE
CE
[V]
Collector Emitter Voltage : V
10
10
Collector Emitter Voltage : V
8
8
6
6
I
C
= 2 0 0 A
4
I
C
= 1 0 0 A
2
I
C
= 5 0 A
4
I
C
= 2 0 0 A
2
I
C
= 1 0 0 A
I
C
= 5 0 A
0
0
5
10
15
20
Gate-Emitter Voltage : V
G E
[V]
25
0
0
5
10
15
20
Gate-Emitter Voltage : V
GE
[V]
25
Switching Time vs. Collector Current
V
CC
= 6 0 0 V , R
G
=9,1
Ω
, V
GE
= ± 1 5 V , T
j
= 2 5 ° C
Switching Time vs. Collector Current
V
CC
= 6 0 0 V , R
G
=9,1
Ω
, V
GE
= ± 1 5 V , T
j
= 1 2 5 ° C
, t
r
, t
off
, t
f
[nsec]
, t
r
, t
off
, t
f
[nsec]
1000
t
on
t
r
t
off
1000
t
on
t
r
t
off
on
on
Switching Time : t
100
t
f
Switching Time : t
100
t
f
10
0
50
100
150
200
Collector Current: I
C
(A)
10
0
50
100
150
200
Collector Current: I
C
(A)
2MBI 100PC-140
Switching Time vs. R
G
V
C C
=600V, I
C
= 1 0 0 A , V
G E
= ± 1 5 V , T
j
= 2 5 ° C
10000
1000
T
j
= 2 5 ° C
2-Pack IGBT
1400V
100A
Collector Current vs. Collector-Emitter Voltage
25
V
C C
= 4 0 0 , 6 0 0 , 8 0 0 V
20
Switching Time : t , t , t , t
f
[nsec]
on r
off
[V]
t
on
t
r
1000
t
off
GE
800
Collector-Emitter-Voltage : V
600
15
100
t
f
400
10
200
5
10
10
Gate Resistance : R
G
[
Ω
]
100
0
0
200
400
G a t e C h a r g e : Q
g
(nC)
600
0
800
Forward Voltage vs. Forward Current
250
V
GE
= 0 V
1000
T
j
= 1 2 5 ° C
25°C
Reverse Recovery Characteristics
t
rr
, I
rr
vs. I
F
[A]
200
Reverse Recovery Current : I
F
Reverse Recovery Time : t
rr
[nsec]
rr
[A]
Forward Current : I
150
t
rr
= 1 2 5 ° C
100
t
rr
= 2 5 ° C
I
rr
= 1 2 5 ° C
I
rr
= 2 5 ° C
100
50
0
0
1
2
Forward Voltage : V
F
[V]
3
4
10
0
50
100
150
200
Forward Current : I
F
[A]
Reverse Biased Safe Operating Area
Transient Thermal Resistance
1200
+ V
G E
=15V, -V
G E
≤
15V, T
j
≤
125°C, R
G
≥
9,1
Ω
[°C/W]
10
0
1000
th(j-c)
[A]
SCSOA
800
(non-repetitive pulse)
FWD
10
-1
Thermal Resistance : R
IGBT
Collector Current : I
C
600
400
RBSOA (Repetitive pulse)
10
-2
200
10
-3
0
-3
10
10
-2
10
-1
10
0
0
200
400
600
800
1000
1200
1400
1600
Pulse Width : P
W
[sec]
Collector-Emitter Voltage : V
CE
[V]
Gate-Emitter Voltage : V
GE
[V]
2MBI 100PC-140
Switching Loss vs. Collector Current
40
V
C C
= 6 0 0 V , R
G
=9,1
Ω
, V
G E
= ± 1 5 V
E
on
1 2 5 ° C
30
E
on
2 5 ° C
100
T
j
= 2 5 ° C
2-Pack IGBT
1400V
100A
Capacitance vs. Collector-Emitter Voltage
, E
off
, E
rr
[mJ/cycle]
, C
oes
, C
res
[nF]
10
C
ies
on
20
E
off
1 2 5 ° C
10
Switching Loss : E
Capacitance: C
ies
1
C
oes
C
res
E
off
25°C
E
rr
1 2 5 ° C
E
rr
25°C
0
0
50
100
150
Collector Current : I
C
[A]
200
0,1
0
5
10
15
20
25
30
35
Collector Emitter Voltage : V
CE
[V]
For more information, contact:
Collmer Semiconductor, Inc.
P.O. Box 702708
Dallas, TX 75370
972-233-1589
972-233-0481 Fax
http://www.collmer.com
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