IGBT MODULE ( N series )
n
Features
•
Square RBSOA
•
Low Saturation Voltage
•
Less Total Power Dissipation
•
Improved FWD Characteristic
•
Minimized Internal Stray Inductance
•
Overcurrent Limiting Function (~3 Times Rated Current)
n
Outline Drawing
n
Applications
•
High Power Switching
•
A.C. Motor Controls
•
D.C. Motor Controls
•
Uninterruptible Power Supply
n
Maximum Ratings and Characteristics
•
Absolute Maximum Ratings
Items
Collector-Emitter Voltage
Gate -Emitter Voltage
Collector
Current
Max. Power Dissipation
Operating Temperature
Storage Temperature
Isolation Voltage
Screw Torque
( T
c
=25°C
)
Symbols
V
CES
V
GES
Continuous
I
C
1ms
I
C PULSE
Continuous
-I
C
1ms
-I
C PULSE
P
C
T
j
T
stg
A.C. 1min.
V
is
Mounting *1
Terminals *1
Ratings
600
±
20
100
200
100
200
400
+150
-40
∼
+125
2500
3.5
3.5
Units
V
V
A
W
°C
°C
V
Nm
n
Equivalent Circuit
Note:
*1:Recommendable Value; 2.5
∼
3.5 Nm (M5)
•
Electrical Characteristics
Items
Zero Gate Voltage Collector Current
Gate-Emitter Leackage Current
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Input capacitance
Output capacitance
Reverse Transfer capacitance
Turn-on Time
Turn-off Time
Diode Forward On-Voltage
Reverse Recovery Time
( at T
j
=25°C )
Symbols
I
CES
I
GES
V
GE(th)
V
CE(sat)
C
ies
C
oes
C
res
t
ON
t
r
t
OFF
t
f
V
F
t
rr
Test Conditions
V
GE
=0V V
CE
=600V
V
CE
=0V V
GE
=± 20V
V
GE
=20V I
C
=100mA
V
GE
=15V I
C
=100A
V
GE
=0V
V
CE
=10V
f=1MHz
V
CC
=300V
I
C
=100A
V
GE
=± 15V
R
G
=24Ω
I
F
=100A V
GE
=0V
I
F
=100A
Min.
Typ.
Max.
1.0
15
7.5
2.8
Units
mA
µA
V
V
pF
1.2
0.6
1.0
0.35
3.0
300
4.5
6600
1470
670
0.6
0.2
0.6
0.2
µs
V
ns
•
Thermal Characteristics
Items
Thermal Resistance
Symbols
R
th(j-c)
R
th(j-c)
R
th(c-f)
Test Conditions
IGBT
Diode
With Thermal Compound
Min.
Typ.
Max.
0.31
0.70
Units
°C/W
0.05
Collector current vs. Collector-Emitter voltage
T
j
=25°C
250
V
GE
=20V,15V,12V
200
200
C
Collector current vs. Collector-Emitter voltage
T
j
=125°C
250
V
GE
=20V,15V, 12V
[A]
Collector current : I
C
10V
Collector current : I
150
[A]
150
10V
100
100
50
8V
0
0
1
2
3
4
5
6
Collector-Emitter voltage : V
CE
[V]
50
8V
0
0
1
2
3
4
5
6
Collector-Emitter voltage : V
CE
[V]
Collector-Emitter vs. Gate-Emitter voltage
T
j
=25°C
10
10
CE
Collector-Emitter vs. Gate-Emitter voltage
T
j
=125°C
[V]
CE
8
[V]
8
Collector-Emitter voltage : V
6
Collector-Emitter voltage : V
6
4
I
C
=
200A
4
I
C
=
200A
100A
2
100A
50A
2
50A
0
0
5
10
15
20
25
Gate-Emitter voltage : V
GE
[V]
0
0
5
10
15
20
25
Gate-Emitter voltage : V
GE
[V]
Switching time vs. Collector current
V
CC
=300V, R
G
=24
Ω
, V
GE
=±15V, T
j
=25°C
1000
1000
Switching time vs. Collector current
V
CC
=300V, R
G
=24
Ω
, V
GE
=±15V, T
j
=125°C
, t
r
, t
off
, t
f
[nsec]
, t
r
, t
off
, t
f
[nsec]
t
on
t
off
t
r
t
f
100
t
off
t
on
t
r
t
f
on
on
100
Switching time : t
10
0
50
100
150
Collector current : I
C
[A]
Switching time : t
10
0
50
100
150
Collector current : I
C
[A]
Switching time vs. R
G
V
CC
=300V, I
C
=100A, V
GE
=±15V, T
j
=25°C
500
t
on
t
off
Dynamic input characteristics
T
j
=25°C
25
V
CC
=200V
, t
r
, t
off
, t
f
[nsec]
1000
[V]
CE
400
300V
400V
20
t
r
t
f
100
Collector-Emitter voltage : V
300
15
Switching time : t
on
200
10
100
5
10
10
Gate resistance : R
G
[W]
100
0
0
100
200
300
400
500
Gate charge : Q
G
[nC]
0
600
Forward current vs. Forward voltage
V
GE
= O V
250
Reverse recovery characteristics
t
rr
, I
rr
vs. I
F
t
rr
125°C
rr
[A]
200
[nsec]
100
I
rr
125°C
t
rr
25°C
I
rr
25°C
T
j
=125°C 25°C
F
[A]
Reverse recovery current : I
Forward current : I
150
100
50
Reverse recovery time
10
0
0
1
2
Forward voltage : V
F
[V]
3
4
:t
rr
0
50
100
150
Forward current : I
F
[A]
Reversed biased safe operating area
Transient thermal resistance
1
Diode
1000
+V
GE
=15V, -V
GE
<15V, T
j
<125°C, R
G
>24
Ω
[°C/W]
IGBT
C
[A]
800
th(j-c)
Collector current : I
600
SCSOA
(non-repetitive pulse)
Thermal resistance : R
0,1
400
200
RBSOA (Repetitive pulse)
0,01
0,001
0
0,01
0,1
1
0
100
200
300
400
500
600
Pulse width : PW [sec]
Collector-Emitter voltage : V
CE
[V]
Switching loss vs. Collector current
V
CC
=300V, R
G
=24
Ω
, V
GE
=±15V
10
Capacitance vs. Collector-Emitter voltage
T
j
=25°C
, E
off
, E
rr
[mJ/cycle]
, C
oes
, C
res
[nF]
E
off
125°C
8
10
C
ies
6
E
off
25°C
on
Switching loss : E
4
Capacitance : C
E
on
125°C
E
on
25°C
ies
1
C
oes
C
res
2
E
rr
125°C
0
0
50
100
Collector Current : I
C
[A]
E
rr
25°C
150
200
0,1
0
5
10
15
20
25
30
35
Collector-Emitter Voltage : V
CE
[V]
Fuji Electric GmbH
Lyoner Straße 26
D-60528 Frankfurt/M
Tel.: 069 - 66 90 29 - 0
Fax.: 069 - 66 90 29 - 56
Fuji Electric (UK) Ltd.
Commonwealth House
2 Chalkhill Road Hammersmith
London W6 8DW, UK
Tel.: 0181 - 233 11 30
Fax.: 0181 - 233 11 60
Specification is subject to change without notice
May 97
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