1.8 Volt Intel
®
Wireless Flash Memory
(W18)
28F320W18, 28F640W18, 28F128W18
Preliminary Datasheet
Product Features
Performance
— 70 ns Asynchronous reads for 32 and 64 Mbit,
90 ns for 128 Mbit
— 14 ns Clock to Data Output (t
CHQV
)
— 20 ns Page Mode Read Speed
— 4-Word, 8-Word, and Continuous-Word Burst
Modes
— Burst and Page Modes in Parameter and Main
Partitions
— Programmable WAIT Configuration
— Enhanced Factory Programming Mode@
3.50 µs/Word (Typ)
— Glueless 12 V interface for Fast Factory
Programming @ 8 µs/Word (Typ)
— 1.8 V Low-Power Programming @ 12 µs/Word
(Typ)
— Program or Erase during Reads
s
Architecture
— Multiple 4-Mbit Partitions
— Dual-Operation: Read-While-Write or Read-
While-Erase
— Eight, 4-Kword Parameter Code and Data
Blocks
— 32-Kword Main Code and Data Blocks
— Top and Bottom Parameter Configurations
s
Power Operation
— 1.7 V to 1.95 V Read and Write Operations
— 1.7 V to 2.24 V V
CCQ
for I/O Isolation
— Standby Current: 5 µA (Typ)
— Read Current: 7 mA (Typ)
s
Software
— 5 µs (Typ) Program Suspend
— 5 µs (Typ) Erase Suspend
— Intel
®
Flash Data Integrator (FDI) Software
Optimized
— Intel Basic Command Set Compatible
— Common Flash Interface (CFI)
s
Quality and Reliability
— Extended Temperature: –40 °C to +85 °C
— Minimum 100,000 Erase Cycles per Block
— ETOX™ VII Flash Technology (0.18 µm)
s
Security
— 128-bit Protection Register: 64 Unique Device
Identifier Bits; 64 User-Programmable OTP
Bits
— Absolute Write Protection
⇒V
PP
= GND
— Erase/Program Lockout during Power
Transitions
— Individual Dynamic Zero-Latency Block
Locking
— Individual Block Lock-Down
s
Density and Packaging
— 32 Mbit and 128 Mbit in a VF BGA Package
— 64 Mbit in a
µBGA*Package
— 56 Active Ball Matrix, 0.75 mm Ball-Pitch
µBGA*
and VF BGA Packages
— 16-bit wide Data Bus
s
The 1.8 Volt Intel
®
Wireless Flash memory with flexible multi-partition dual-operation provides high-
performance asynchronous and synchronous burst reads. It is an ideal memory for low-voltage burst CPUs.
Combining high read performance with flash memory’s intrinsic non-volatility, 1.8 Volt Intel Wireless Flash
memory eliminates the traditional system-performance paradigm of shadowing redundant code memory from
slow nonvolatile storage to faster execution memory. It reduces the total memory requirement that increases
reliability and reduces overall system power consumption and cost.
The 1.8 Volt Intel Wireless Flash memory’s flexible multi-partition architecture allows programming or erasing to
occur in one partition while reading from another partition. This allows for higher data write throughput
compared to single partition architectures. The dual-operation architecture also allows two processors to
interleave code operations while program and erase operations take place in the background. The designer can
also choose the size of the code and data partitions via the flexible multi-partition architecture.
The 1.8 Volt Intel Wireless Flash memory is manufactured on Intel’s 0.18 µm ETOX™ VII process technology. It
is available in µBGA and VF BGA packages which are ideal for board-constrained applications.
Notice:
This document contains preliminary information on new products in production. The
specifications are subject to change without notice. Verify with your local Intel sales office that
you have the latest datasheet before finalizing a design.
290701-003
June 2001
Information in this document is provided in connection with Intel® products. No license, express or implied, by estoppel or otherwise, to any
intellectual property rights is granted by this document. Except as provided in Intel's Terms and Conditions of Sale for such products, Intel assumes no
liability whatsoever, and Intel disclaims any express or implied warranty, relating to sale and/or use of Intel products including liability or warranties
relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright or other intellectual property right. Intel products are
not intended for use in medical, life saving, or life sustaining applications.
Intel may make changes to specifications and product descriptions at any time, without notice.
Designers must not rely on the absence or characteristics of any features or instructions marked "reserved" or "undefined." Intel reserves these for
future definition and shall have no responsibility whatsoever for conflicts or incompatibilities arising from future changes to them.
The 1.8 Volt Intel® Wireless Flash memory may contain design defects or errors known as errata which may cause the product to deviate from
published specifications. Current characterized errata are available on request.
Contact your local Intel sales office or your distributor to obtain the latest specifications and before placing your product order.
Copies of documents which have an ordering number and are referenced in this document, or other Intel literature may be obtained by calling 1-800-
548-4725 or by visiting Intel's website at http://www.intel.com.
Copyright © Intel Corporation, 2001.
*Other names and brands may be claimed as the property of others.
1.8 Volt Intel® Wireless Flash Memory (W18)
Contents
1.0
Introduction
.................................................................................................................. 1
1.1
1.2
Document Conventions ......................................................................................... 1
Product Overview .................................................................................................. 2
Package and Ballouts............................................................................................ 4
Signal Descriptions................................................................................................ 4
Memory Partitioning .............................................................................................. 6
Bus Operations...................................................................................................... 9
3.1.1 Read......................................................................................................... 9
3.1.2 Standby ..................................................................................................10
3.1.3 Write .......................................................................................................10
3.1.4 Reset ......................................................................................................10
Read-While-Write and Read-While-Erase...........................................................11
Read Array Command.........................................................................................14
Read Identifier Command ...................................................................................14
Read Query Command .......................................................................................15
Read Status Register Command.........................................................................15
Clear Status Register Command.........................................................................17
Word Program Command ...................................................................................17
Block Erase Command........................................................................................18
Program Suspend, Program Resume, Erase Suspend,
Erase Resume Commands .................................................................................20
Enhanced Factory Program Command (EFP) ....................................................23
4.10.1 EFP Requirements and Considerations .................................................23
4.10.2 Setup Phase...........................................................................................24
4.10.3 Program Phase ......................................................................................24
4.10.4 Verify Phase ...........................................................................................24
4.10.5 Exit Phase ..............................................................................................25
Security Modes....................................................................................................27
Block Locking Commands...................................................................................27
4.12.1 Lock Block ..............................................................................................28
4.12.2 Unlock Block...........................................................................................28
4.12.3 Lock-Down Block....................................................................................28
4.12.4 Block Lock Status...................................................................................29
4.12.5 Locking Operations During Erase Suspend ...........................................29
4.12.6 Status Register Error Checking..............................................................29
4.12.7 WP# Lock-Down Control ........................................................................30
Protection Register..............................................................................................30
Read Protection Register ....................................................................................31
Program Protection Register ...............................................................................31
4.15.1 Lock Protection Register ........................................................................32
Set Configuration Register ..................................................................................34
2.0
Product Description
.................................................................................................. 4
2.1
2.2
2.3
3.0
Principles of Operation
............................................................................................ 9
3.1
4.0
Command Definitions
.............................................................................................11
4.1
4.2
4.3
4.4
4.5
4.6
4.7
4.8
4.9
4.10
4.11
4.12
4.13
4.14
4.15
4.16
iii
1.8 Volt Intel® Wireless Flash Memory ( W18)
4.16.1 Read Mode (CR.15) ............................................................................... 35
4.16.2 First Access Latency Count (CR.13-11)................................................. 35
4.16.3 WAIT Signal Polarity (CR.10)................................................................. 37
4.16.4 WAIT Signal Function ............................................................................ 38
4.16.5 Data Output Configuration (CR.9) .......................................................... 38
4.16.6 WAIT Delay Configuration (CR.8) .......................................................... 39
4.16.7 Burst Sequence Configuration (CR.7).................................................... 40
4.16.8 Clock Configuration (CR.6) .................................................................... 41
4.16.9 Burst Wrap (CR.5).................................................................................. 41
4.16.10 Burst Length (CR.2-0) ............................................................................ 42
5.0
Program and Erase Voltages
.............................................................................. 43
5.1
5.2
Factory Program Mode ....................................................................................... 43
Programming Voltage Protection (VPP).............................................................. 43
Active Power ....................................................................................................... 44
Automatic Power Savings ................................................................................... 44
Standby Power.................................................................................................... 44
Power-Up/Down Operation ................................................................................. 44
6.4.1 System Reset and RST#........................................................................ 44
6.4.2 VCC, VPP, and RST# Transitions.......................................................... 45
6.4.3 Power Supply Decoupling ...................................................................... 45
Absolute Maximum Ratings ................................................................................ 46
Extended Temperature Operation....................................................................... 47
Capacitance ........................................................................................................ 47
DC Characteristics .............................................................................................. 48
AC I/O Test Conditions ....................................................................................... 50
AC Read Characteristics..................................................................................... 51
AC Write Characteristics ..................................................................................... 61
Erase and Program Times .................................................................................. 63
Reset Specifications............................................................................................ 63
6.0
Power Consumption
............................................................................................... 44
6.1
6.2
6.3
6.4
7.0
Electrical Specifications
........................................................................................ 46
7.1
7.2
7.3
7.4
7.5
7.6
7.7
7.8
7.9
Appendix A
Appendix B
Appendix C
Appendix D
Write State Machine States
............................................................................. 65
Common Flash Interface
................................................................................. 68
Mechanical Specifications
.............................................................................. 76
Ordering Information
......................................................................................... 77
iv
1.8 Volt Intel® Wireless Flash Memory (W18)
Revision History
Date of
Revision
09/13/00
01/29/01
Version
290701-001
290701-002
Original Version
Deleted 16-Mbit density
Revised
ADV#,
Section 2.2
Revised
Protection Registers,
Section 4.16
Revised
Program Protection Register,
Section 4.18
Revised Example in
First Access Latency Count,
Section 5.0.2
Revised Figure 5,
Data Output with LC Setting at Code 3
Added
WAIT Signal Function,
Section 5.0.3
Revised
WAIT Signal Polarity,
Section 5.0.4
Revised
Data Output Configuration,
Section 5.0.5
Added Figure 7,
Data Output Configuration with WAIT Signal Delay
Revised
WAIT Delay Configuration,
Section 5.0.6
Changed V
CCQ
Spec from 1.7 V – 1.95 V to 1.7 V – 2.24 V in Section 8.2,
Extended Temperature Operation
Changed I
CCS
Spec from 15 µA to 18 µA in Section 8.4,
DC
Characteristics
Changed I
CCR
Spec from 10 mA (CLK = 40 MHz, burst length = 4) and 13
mA (CLK = 52 MHz, burst length = 4) to 13 mA, and 16 mA respectively in
Section 8.4,
DC Characteristics
Changed I
CCWS
Spec from 15 µA to 18 µA in Section 8.4,
DC
Characteristics
Changed I
CCES
Spec from 15 µA to 18 µA in Section 8.4,
DC
Characteristics
Changed t
CHQX
Spec from 5ns to 3ns in Section 8.6,
AC Read
Characteristics
Added Figure 25, WAIT Signal in Synchronous Non-Read Array Operation
Waveform
Added Figure 26,
WAIT Signal in Asynchronous Page Mode Read
Operation Waveform
Added Figure 27,
WAIT Signal in Asynchronous Single Word Read
Operation Waveform
Revised Appendix E,
Ordering Information
Revised entire Section 4.10,
Enhanced Factory Program Command (EFP)
and Figure 6,
Enhanced Factory Program Flowchart
Revised Section 4.13,
Protection Register
Revised Section 4.15,
Program Protection Register
Revised Section 7.3,
Capacitance,
to include 128-Mbit specs
Revised Section 7.4,
DC Characteristics,
to include 128-Mbit specs
Revised Section 7.6,
AC Read Characteristics,
to include 128-Mbit device
specifications
Added t
VHGL
Spec in Section 7.6,
AC Read Characteristics
Revised Section 7.7,
AC Write Characteristics,
to include 128-Mbit device
specifications
Minor text edits
Description
06/12/01
290701-003
v
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
